公开(公告)号：EP2227827A1

公开(公告)日：2010-09-15

申请号：EP08869246.2

申请日：2008-12-30

申请人： Sandisk 3D LLC

发明人： SCHRICKER, April ,  CLARK, Mark ,  HERNER, Brad

IPC分类号： H01L27/115 ,  H01L21/8247

CPC分类号： H01L51/0575 ,  B82Y10/00 ,  G11C13/025 ,  G11C2213/72 ,  H01L27/2409 ,  H01L27/2481 ,  H01L27/285 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/149 ,  H01L45/1616 ,  H01L51/0048 ,  H01L51/0591 ,  H01L51/0595

摘要： In some aspects, a method of fabricating a memory cell is provided that includes (1) fabricating a first conductor above a substrate; (2) selectively fabricating a carbon nano-tube (CNT) material above the first conductor; (3) fabricating a diode above the CNT material; and (4) fabricating a second conductor above the diode. Numerous other aspects are provided.

摘要翻译： 在一些方面中，提供了一种制造存储器单元的方法，其包括（1）在衬底上制造第一导体; （2）在第一导体上选择性地制造碳纳米管（CNT）材料; （3）在CNT材料上方制造二极管; 和（4）在二极管上方制造第二导体。 许多其他方面提供。

公开(公告)号：EP2227824A2

公开(公告)日：2010-09-15

申请号：EP08869555.6

申请日：2008-12-30

申请人： Sandisk 3D LLC

发明人： CLARK, Mark ,  HERNER, Brad ,  SCHRICKER, April

IPC分类号： H01L21/8247 ,  H01L27/115

CPC分类号： G11C13/025 ,  B82Y10/00 ,  G11C5/02 ,  G11C13/0002 ,  G11C2213/35 ,  G11C2213/71 ,  G11C2213/72 ,  G11C2213/79 ,  H01L27/101 ,  H01L27/2409 ,  H01L27/2436 ,  H01L27/2481 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/149 ,  H01L45/1616

摘要： In some aspects, a method of fabricating a memory cell is provided that includes (1) fabricating a steering element above a substrate; and (2) fabricating a reversible-resistance switching element coupled to the steering element by selectively fabricating carbon nano-tube (CNT) material above the substrate. Numerous other aspects are provided.

公开(公告)号：EP2342752A1

公开(公告)日：2011-07-13

申请号：EP09792789.1

申请日：2009-09-21

申请人： Sandisk 3D LLC

发明人： SCHRICKER, April, Dawn ,  SEKAR, Deepak, C. ,  FU, Andy ,  CLARK, Mark

IPC分类号： H01L27/24 ,  H01L45/00

CPC分类号： H01L45/1233 ,  H01L27/101 ,  H01L27/1021 ,  H01L27/2418 ,  H01L27/2481 ,  H01L45/04 ,  H01L45/06 ,  H01L45/122 ,  H01L45/144 ,  H01L45/149 ,  H01L45/1683

摘要： Forming a metal-insulator diode and carbon memory element in a single damascene process is disclosed. A trench having a bottom and a sidewall is formed in an insulator. A first diode electrode is formed in the trench during a single damascene process. A first insulating region comprising a first insulating material is formed in the trench during the single damascene process. A second insulating region comprising a second insulating material is formed in the trench during the single damascene process. A second diode electrode is formed in the trench during the single damascene process. The first insulating region and the second insulating region reside between the first diode electrode and the second diode electrode to form a metal-insulator-insulator-metal (MIIM) diode. A region of carbon is formed in the trench during the single damascene process. At least a portion of the carbon is electrically in series with the MIIM diode.

公开(公告)号：EP2162917A1

公开(公告)日：2010-03-17

申请号：EP08768806.5

申请日：2008-06-27

申请人： Sandisk 3d, Llc

发明人： SCHRICKER, April ,  HERNER, S., Brad ,  CLARK, Mark

IPC分类号： H01L27/102 ,  H01L21/822 ,  H01L27/06 ,  H01L27/24 ,  H01L45/00 ,  H01L27/10

CPC分类号： H01L27/102 ,  H01L27/101 ,  H01L27/1021 ,  H01L27/24

摘要： A method of forming a memory cell is provided that includes (1) forming a first conductor (206) above a substrate; (2) forming a reversible resistance-switching element (202) above the first conductor using a selective growth process; (3) forming a diode (204) above the first conductor; and (4) forming a second conductor (208) above the diode and the reversible resistance-switching element so as to obtain a crosspoint memory device. The switching element can also be steered by a TFT. The switching element contains a difficult to etch material, e.g. TiO2, and is formed without etching this material by means of oxidising another material, e.g. Ti or TiN.

公开(公告)号：EP2342752B1

公开(公告)日：2015-01-07

申请号：EP09792789.1

申请日：2009-09-21

申请人： SanDisk 3D LLC

发明人： SCHRICKER, April, Dawn ,  SEKAR, Deepak, C. ,  FU, Andy ,  CLARK, Mark

IPC分类号： H01L27/24 ,  H01L45/00

CPC分类号： H01L45/1233 ,  H01L27/101 ,  H01L27/1021 ,  H01L27/2418 ,  H01L27/2481 ,  H01L45/04 ,  H01L45/06 ,  H01L45/122 ,  H01L45/144 ,  H01L45/149 ,  H01L45/1683

公开(公告)号：EP2227824B1

公开(公告)日：2014-04-16

申请号：EP08869555.6

申请日：2008-12-30

申请人： Sandisk 3D LLC

发明人： CLARK, Mark ,  HERNER, Brad ,  SCHRICKER, April

IPC分类号： G11C13/00 ,  G11C13/02 ,  G11C5/02 ,  H01L27/10 ,  H01L27/04 ,  H01L27/24 ,  B82Y10/00 ,  H01L45/00

CPC分类号： G11C13/025 ,  B82Y10/00 ,  G11C5/02 ,  G11C13/0002 ,  G11C2213/35 ,  G11C2213/71 ,  G11C2213/72 ,  G11C2213/79 ,  H01L27/101 ,  H01L27/2409 ,  H01L27/2436 ,  H01L27/2481 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/149 ,  H01L45/1616

公开(公告)号：EP2227825A2

公开(公告)日：2010-09-15

申请号：EP08870041.4

申请日：2008-12-30

申请人： Sandisk 3D LLC

发明人： SCHRICKER, April ,  CLARK, Mark ,  HERNER, Brad ,  TANAKA, Yoichiro

IPC分类号： H01L21/8247 ,  H01L27/11

CPC分类号： H01L51/0595 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  G11C13/0014 ,  G11C13/025 ,  G11C2213/71 ,  G11C2213/72 ,  H01L21/31053 ,  H01L27/1021 ,  H01L27/2409 ,  H01L27/2481 ,  H01L27/285 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/149 ,  H01L45/1616 ,  H01L51/0048 ,  H01L51/0587 ,  H01L51/0591

摘要： In some aspects, a method of fabricating a memory cell is provided that includes (1) fabricating a first conductor above a substrate; (2) fabricating a carbon nano- tube (CNT) material above the first conductor; (3) depositing a dielectric material onto a top surface of the CNT material; (4) planarizing the dielectric material to expose at least a portion of the CNT material; (5) fabricating a diode above the first conductor; and (6) fabricating a second conductor above the CNT material and the diode. Numerous other aspects are provided.