专利检索 ap:("Sandisk 3D LLC") AND inv:"KONEVECKI, Michael" 第 1 页

1.

发明授权
METHODS FOR ETCHING CARBON NANO-TUBE FILMS FOR USE IN NON-VOLATILE MEMORIES 有权
标题翻译：方法碳纳米管蛋鸡中的用途非易失性存储器蚀刻

公开(公告)号：EP2263252B1

公开(公告)日：2013-10-09

申请号：EP09730879.5

申请日：2009-04-10

申请人： SanDisk 3D LLC

发明人： SCHRICKER, April, D. , FU, Andy , KONEVECKI, Michael , MAXWELL, Steven

IPC分类号： H01L21/311 , H01L21/3213 , H01L27/10 , H01L27/24 , H01L45/00 , B82Y10/00 , B82Y40/00

CPC分类号： H01L21/31138 , B82Y10/00 , B82Y40/00 , G11C13/025 , H01L21/32136 , H01L27/101 , H01L27/2409 , H01L27/2481 , H01L45/04 , H01L45/1233 , H01L45/149 , H01L45/1675

摘要： Memory cells, and methods of forming such memory cells are provided that include a steering element coupled to a carbon-based reversible resistivity-switching material. In particular embodiments, methods in accordance with this invention etch a carbon nano-tube ("CNT") film formed over a substrate, the methods including coating the substrate with a masking layer, patterning the masking layer, and etching the CNT film through the patterned masking layer using a non-oxygen based chemistry. Other aspects are also described.

2.

发明授权
METHOD OF FORMING A MEMORY CELL THAT EMPLOYS A SELECTIVELY DEPOSITED REVERSIBLE RESISTANCE-SWITCHING ELEMENT 有权
标题翻译：用于生产的存储单元具有选择僻静的可逆电阻切换元件方法中使用

公开(公告)号：EP2162916B1

公开(公告)日：2013-03-20

申请号：EP08779800.5

申请日：2008-06-27

申请人： Sandisk 3D LLC

发明人： SCHRICKER, April , HERNER, S., Brad , KONEVECKI, Michael

IPC分类号： H01L21/822 , H01L27/10

CPC分类号： H01L27/101 , H01L27/2409 , H01L27/2436 , H01L27/2481 , H01L45/04 , H01L45/1233 , H01L45/146 , H01L45/1608

3.

发明公开
METHODS FOR ETCHING CARBON NANO-TUBE FILMS FOR USE IN NON-VOLATILE MEMORIES 有权
标题翻译：方法碳纳米管蛋鸡中的用途非易失性存储器蚀刻

公开(公告)号：EP2263252A1

公开(公告)日：2010-12-22

申请号：EP09730879.5

申请日：2009-04-10

申请人： Sandisk 3d, Llc

发明人： SCHRICKER, April, D. , FU, Andy , KONEVECKI, Michael , MAXWELL, Steven

IPC分类号： H01L21/311 , H01L21/3213

CPC分类号： H01L21/31138 , B82Y10/00 , B82Y40/00 , G11C13/025 , H01L21/32136 , H01L27/101 , H01L27/2409 , H01L27/2481 , H01L45/04 , H01L45/1233 , H01L45/149 , H01L45/1675

摘要： Memory cells, and methods of forming such memory cells are provided that include a steering element coupled to a carbon-based reversible resistivity-switching material. In particular embodiments, methods in accordance with this invention etch a carbon nano-tube ("CNT") film formed over a substrate, the methods including coating the substrate with a masking layer, patterning the masking layer, and etching the CNT film through the patterned masking layer using a non-oxygen based chemistry. Other aspects are also described.

4.

发明公开
MEMORY CELL THAT EMPLOYS A SELECTIVELY DEPOSITED REVERSIBLE RESISTANCE-SWITCHING ELEMENT AND METHODS OF FORMING THE SAME 有权
标题翻译：用于生产的存储单元具有选择僻静的可逆电阻切换元件方法中使用

公开(公告)号：EP2162916A2

公开(公告)日：2010-03-17

申请号：EP08779800.5

申请日：2008-06-27

申请人： Sandisk 3D LLC

发明人： SCHRICKER, April , HERNER, S., Brad , KONEVECKI, Michael

IPC分类号： H01L27/10

CPC分类号： H01L27/101 , H01L27/2409 , H01L27/2436 , H01L27/2481 , H01L45/04 , H01L45/1233 , H01L45/146 , H01L45/1608

摘要： In some aspects, a method of forming a memory cell is provided that includes (1) forming a first conductor above a substrate; (2) forming a diode above the first conductor; (3) forming a reversible resistance-switching element above the first conductor using a selective deposition process; and (4) forming a second conductor above the diode and the reversible resistance-switching element. Numerous other aspects are provided.