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1.发明公开MEMORY CELL THAT EMPLOYS A SELECTIVELY FABRICATED CARBON NANO-TUBE REVERSIBLE RESISTANCE-SWITCHING ELEMENT AND METHODS OF FORMING THE SAME 有权具有可逆，选择性冷拔碳纳米管电阻切换元件及其制造方法MEMORY CELL
公开(公告)号：EP2227824A2
公开(公告)日：2010-09-15
申请号：EP08869555.6
申请日：2008-12-30
申请人： Sandisk 3D LLC
发明人： CLARK, Mark , HERNER, Brad , SCHRICKER, April
IPC分类号： H01L21/8247 , H01L27/115
CPC分类号： G11C13/025 , B82Y10/00 , G11C5/02 , G11C13/0002 , G11C2213/35 , G11C2213/71 , G11C2213/72 , G11C2213/79 , H01L27/101 , H01L27/2409 , H01L27/2436 , H01L27/2481 , H01L45/04 , H01L45/1233 , H01L45/149 , H01L45/1616
摘要： In some aspects, a method of fabricating a memory cell is provided that includes (1) fabricating a steering element above a substrate; and (2) fabricating a reversible-resistance switching element coupled to the steering element by selectively fabricating carbon nano-tube (CNT) material above the substrate. Numerous other aspects are provided.
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2.发明公开MEMORY CELL THAT EMPLOYS A SELECTIVELY GROWN REVERSIBLE RESISTANCE-SWITCHING ELEMENT AND METHODS OF FORMING THE SAME 审中-公开CELL可逆的，选择性TOWED电阻切换元件和方法形成该
公开(公告)号：EP2162917A1
公开(公告)日：2010-03-17
申请号：EP08768806.5
申请日：2008-06-27
申请人： Sandisk 3d, Llc
发明人： SCHRICKER, April , HERNER, S., Brad , CLARK, Mark
IPC分类号： H01L27/102 , H01L21/822 , H01L27/06 , H01L27/24 , H01L45/00 , H01L27/10
CPC分类号： H01L27/102 , H01L27/101 , H01L27/1021 , H01L27/24
摘要： A method of forming a memory cell is provided that includes (1) forming a first conductor (206) above a substrate; (2) forming a reversible resistance-switching element (202) above the first conductor using a selective growth process; (3) forming a diode (204) above the first conductor; and (4) forming a second conductor (208) above the diode and the reversible resistance-switching element so as to obtain a crosspoint memory device. The switching element can also be steered by a TFT. The switching element contains a difficult to etch material, e.g. TiO2, and is formed without etching this material by means of oxidising another material, e.g. Ti or TiN.
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3.发明授权METHOD OF FORMING A MEMORY CELL THAT EMPLOYS A SELECTIVELY DEPOSITED REVERSIBLE RESISTANCE-SWITCHING ELEMENT 有权用于生产的存储单元具有选择僻静的可逆电阻切换元件方法中使用
公开(公告)号：EP2162916B1
公开(公告)日：2013-03-20
申请号：EP08779800.5
申请日：2008-06-27
申请人： Sandisk 3D LLC
IPC分类号： H01L21/822 , H01L27/10
CPC分类号： H01L27/101 , H01L27/2409 , H01L27/2436 , H01L27/2481 , H01L45/04 , H01L45/1233 , H01L45/146 , H01L45/1608
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4.发明公开MEMORY CELL THAT EMPLOYS A SELECTIVELY FABRICATED CARBON NANO-TUBE REVERSIBLE RESISTANCE-SWITCHING ELEMENT FORMED OVER A BOTTOM CONDUCTOR AND METHODS OF FORMING THE SAME 审中-公开存储器单元，其使用在底部导体上形成的选择性制造的碳纳米管可逆电阻切换元件以及形成相同的方法
公开(公告)号：EP2227827A1
公开(公告)日：2010-09-15
申请号：EP08869246.2
申请日：2008-12-30
申请人： Sandisk 3D LLC
发明人： SCHRICKER, April , CLARK, Mark , HERNER, Brad
IPC分类号： H01L27/115 , H01L21/8247
CPC分类号： H01L51/0575 , B82Y10/00 , G11C13/025 , G11C2213/72 , H01L27/2409 , H01L27/2481 , H01L27/285 , H01L45/04 , H01L45/1233 , H01L45/149 , H01L45/1616 , H01L51/0048 , H01L51/0591 , H01L51/0595
摘要： In some aspects, a method of fabricating a memory cell is provided that includes (1) fabricating a first conductor above a substrate; (2) selectively fabricating a carbon nano-tube (CNT) material above the first conductor; (3) fabricating a diode above the CNT material; and (4) fabricating a second conductor above the diode. Numerous other aspects are provided.
摘要翻译： 在一些方面中，提供了一种制造存储器单元的方法，其包括（1）在衬底上制造第一导体; （2）在第一导体上选择性地制造碳纳米管（CNT）材料; （3）在CNT材料上方制造二极管; 和（4）在二极管上方制造第二导体。 许多其他方面提供。
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5.发明公开MEMORY CELL THAT EMPLOYS A SELECTIVELY DEPOSITED REVERSIBLE RESISTANCE-SWITCHING ELEMENT AND METHODS OF FORMING THE SAME 有权用于生产的存储单元具有选择僻静的可逆电阻切换元件方法中使用
公开(公告)号：EP2162916A2
公开(公告)日：2010-03-17
申请号：EP08779800.5
申请日：2008-06-27
申请人： Sandisk 3D LLC
IPC分类号： H01L27/10
CPC分类号： H01L27/101 , H01L27/2409 , H01L27/2436 , H01L27/2481 , H01L45/04 , H01L45/1233 , H01L45/146 , H01L45/1608
摘要： In some aspects, a method of forming a memory cell is provided that includes (1) forming a first conductor above a substrate; (2) forming a diode above the first conductor; (3) forming a reversible resistance-switching element above the first conductor using a selective deposition process; and (4) forming a second conductor above the diode and the reversible resistance-switching element. Numerous other aspects are provided.
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6.发明授权MEMORY CELL THAT EMPLOYS A SELECTIVELY FABRICATED CARBON NANO-TUBE REVERSIBLE RESISTANCE-SWITCHING ELEMENT AND METHODS OF FORMING THE SAME 有权具有可逆，选择性冷拔碳纳米管电阻切换元件及其制造方法MEMORY CELL
公开(公告)号：EP2227824B1
公开(公告)日：2014-04-16
申请号：EP08869555.6
申请日：2008-12-30
申请人： Sandisk 3D LLC
发明人： CLARK, Mark , HERNER, Brad , SCHRICKER, April
IPC分类号： G11C13/00 , G11C13/02 , G11C5/02 , H01L27/10 , H01L27/04 , H01L27/24 , B82Y10/00 , H01L45/00
CPC分类号： G11C13/025 , B82Y10/00 , G11C5/02 , G11C13/0002 , G11C2213/35 , G11C2213/71 , G11C2213/72 , G11C2213/79 , H01L27/101 , H01L27/2409 , H01L27/2436 , H01L27/2481 , H01L45/04 , H01L45/1233 , H01L45/149 , H01L45/1616
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7.发明公开MEMORY CELL WITH PLANARIZED CARBON NANOTUBE LAYER AND METHODS OF FORMING THE SAME 审中-公开根据上述制造平坦化的碳纳米管层和进程的内存CELL
公开(公告)号：EP2227825A2
公开(公告)日：2010-09-15
申请号：EP08870041.4
申请日：2008-12-30
申请人： Sandisk 3D LLC
发明人： SCHRICKER, April , CLARK, Mark , HERNER, Brad , TANAKA, Yoichiro
IPC分类号： H01L21/8247 , H01L27/11
CPC分类号： H01L51/0595 , B82Y10/00 , B82Y30/00 , B82Y40/00 , G11C13/0014 , G11C13/025 , G11C2213/71 , G11C2213/72 , H01L21/31053 , H01L27/1021 , H01L27/2409 , H01L27/2481 , H01L27/285 , H01L45/04 , H01L45/1233 , H01L45/149 , H01L45/1616 , H01L51/0048 , H01L51/0587 , H01L51/0591
摘要： In some aspects, a method of fabricating a memory cell is provided that includes (1) fabricating a first conductor above a substrate; (2) fabricating a carbon nano- tube (CNT) material above the first conductor; (3) depositing a dielectric material onto a top surface of the CNT material; (4) planarizing the dielectric material to expose at least a portion of the CNT material; (5) fabricating a diode above the first conductor; and (6) fabricating a second conductor above the CNT material and the diode. Numerous other aspects are provided.
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