公开(公告)号：EP1194799A1

公开(公告)日：2002-04-10

申请号：EP00944023.1

申请日：2000-07-10

申请人： Schott Glas ,  CARL-ZEISS-STIFTUNGtrading as SCHOTT GLASWERKE

发明人： DANIELZIK, Burkhard ,  HENTSCHEL, Rüdiger ,  BRAUNECK, Ulf ,  KUHR, Markus ,  METZ, Bernd ,  BAUER, Stefan

IPC分类号： G02B5/28 ,  G02B1/11

CPC分类号： C23C16/515 ,  G02B5/281 ,  G02B5/288

摘要： The invention relates to a narrow-band optical interference filter for a wavelength (μ0) comprising a plurality of dielectric layers, whereby said dielectric layers alternately have a high (nH) and a low refractive index (nL) and a first number of dielectric layers has an optical layer thickness of μ/4 or μ/2 or an integral multiple thereof. The invention is characterized in that a second number of layers in the layer system has an optical layer thickness differing from μ/4 and μ/2 resulting in a minimized overall layer.

公开(公告)号：EP1417042A2

公开(公告)日：2004-05-12

申请号：EP02748647.1

申请日：2002-03-28

申请人： Schott Glas ,  CARL-ZEISS-STIFTUNGtrading as Schott Glas

发明人： KUHR, Markus ,  WOLFF, Detlef ,  WALTHER, Marten ,  BEHLE, Stephan ,  BAUER, Stefan ,  KLIPPE, Lutz ,  MOELLE, Christoph ,  BEWIG, Lars ,  KOPPE, Frank ,  KÜPPER, Thomas ,  MARING, Wolfram ,  HEINZ, Jochen;

IPC分类号： B05D7/24

CPC分类号： G02B1/111 ,  B05D1/62 ,  B05D7/02 ,  B05D7/52 ,  C23C16/029 ,  C23C16/515 ,  G02B1/10

摘要： The invention relates to the coating of a synthetic substrate for producing a coated body, a device for carrying out such a method and the use thereof.

公开(公告)号：EP1208245B1

公开(公告)日：2003-02-19

申请号：EP00954559.1

申请日：2000-07-25

申请人： Schott Glas

发明人： LOHMEYER, Manfred ,  BAUER, Stefan ,  DANIELZIK, Burkhard ,  MÖHL, Wolfgang ,  FREITAG, Nina

IPC分类号： C23C16/56 ,  C23C16/24 ,  C23C16/515 ,  H01L31/04 ,  H01L21/205 ,  H01L31/075

CPC分类号： H01L21/0245 ,  C23C16/24 ,  C23C16/515 ,  C23C16/56 ,  H01L21/0242 ,  H01L21/02507 ,  H01L21/02532 ,  H01L21/0262 ,  H01L31/1824 ,  H01L31/202 ,  Y02E10/545 ,  Y02P70/521

摘要： The invention relates to a plasma activated CVD method and to a device for producing a microcristalline Si:H layer on a substrate and to the use thereof, especially as a thin film solar cell. The inventive plasma activated CVD method includes the following steps: depositing at least one thin film of amorphous Si:H on the substrate according to the plasma activated CVD method; plasma-treating the amorphous Si:H layer with a hydrogen plasma, whereby said amorphous Si:H layer is converted to a microcristalline Si:H layer and if necessary repeating the two first steps. The inventive plasma activated CVD method is characterised in that the coating step or the treatment is carried out with a constant flow of coating gases or treatment gases and with a pulsed electromagnetic radiation which activates the plasma.

公开(公告)号：EP1326809A1

公开(公告)日：2003-07-16

申请号：EP00990633.0

申请日：2000-12-01

申请人： Schott Glas

发明人： BAUER, Stefan ,  KUHR, Markus ,  VINGERLING, Bram ,  Lutz Klippe ,  Burkhard Danielzik

IPC分类号： C03C17/22 ,  C03C17/34 ,  G02B1/11

CPC分类号： G02B1/115 ,  C03C17/22 ,  C03C17/3447 ,  C03C17/3452 ,  C03C17/3458 ,  G02B6/132 ,  G02B2006/12109

摘要： The invention relates to an optical substrate on which at least one layer is to be arranged in such a way that the propagation of light is influenced. The aim of the invention is to reduce the production time for one such substrate and to preferably significantly reduce the surface strains thereof. To this end, the inventive substrate is produced by means of an application method which is characterised in that at least one of the layers applied comprises halogen atoms or a halogen compound.

公开(公告)号：EP1208245A1

公开(公告)日：2002-05-29

申请号：EP00954559.1

申请日：2000-07-25

申请人： Schott Glas

发明人： LOHMEYER, Manfred ,  BAUER, Stefan ,  DANIELZIK, Burkhard ,  MÖHL, Wolfgang ,  FREITAG, Nina

IPC分类号： C23C16/56 ,  C23C16/24 ,  C23C16/515 ,  H01L31/04 ,  H01L21/205 ,  H01L31/075

CPC分类号： H01L21/0245 ,  C23C16/24 ,  C23C16/515 ,  C23C16/56 ,  H01L21/0242 ,  H01L21/02507 ,  H01L21/02532 ,  H01L21/0262 ,  H01L31/1824 ,  H01L31/202 ,  Y02E10/545 ,  Y02P70/521

摘要： The invention relates to a plasma activated CVD method and to a device for producing a microcristalline Si:H layer on a substrate and to the use thereof, especially as a thin film solar cell. The inventive plasma activated CVD method includes the following steps: depositing at least one thin film of amorphous Si:H on the substrate according to the plasma activated CVD method; plasma-treating the amorphous Si:H layer with a hydrogen plasma, whereby said amorphous Si:H layer is converted to a microcristalline Si:H layer and if necessary repeating the two first steps. The inventive plasma activated CVD method is characterised in that the coating step or the treatment is carried out with a constant flow of coating gases or treatment gases and with a pulsed electromagnetic radiation which activates the plasma.