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    Ferroelectric film, method of manufacturing ferroelectric film, ferroelectric capacitor, method of manufacturing ferroelectric capacitor, and ferroelectric memory
    1.
    发明公开
    Ferroelectric film, method of manufacturing ferroelectric film, ferroelectric capacitor, method of manufacturing ferroelectric capacitor, and ferroelectric memory 审中-公开
    铁电体层Herstellungsvefahren一个铁电层，ferrroelektrischer电容器Herstellungsvefahren一个铁电电容器和铁电存储器

    公开(公告)号：EP1463100A1

    公开(公告)日：2004-09-29

    申请号：EP04251699.7

    申请日：2004-03-24

    申请人： SEIKO EPSON CORPORATION

    发明人： Ohashi, Koji ,  Kijima, Takeshi ,  Karasawa, Junichi ,  Hamada, Yasuaki ,  Natori, Eiji

    IPC分类号： H01L21/316 ,  H01L27/115 ,  H01L21/8246

    CPC分类号： H01L27/11502 ,  H01L21/02197 ,  H01L21/02282 ,  H01L21/28273 ,  H01L21/31691 ,  H01L27/11507 ,  H01L28/55

    摘要： A method of manufacturing a ferroelectric film having excellent characteristics and a ferroelectric film manufactured by this method are provided. This method of manufacturing a ferroelectric film includes crystallizing a raw material having a complex oxide, the method including: performing a heat treatment in a first condition in which a predetermined pressure and a predetermined temperature are applied; and maintaining a second condition, in which a pressure and a temperature lower than the pressure and the temperature in the first condition are applied, after the heat treatment in the first condition, and the raw material is crystallized by repeating the heat treatment in the first condition and the maintaining the second condition.

    摘要翻译： 提供一种制造铁电体具有膜优异的特性和强电介质膜制造的由该方法的方法。 一种制造铁电体膜结晶的这种方法包括具有复合氧化物，包括该方法的原料：在其中预定的压力和预定的温度下施加的第一条件进行热处理; 和维护一个第二状态，其中压力和比压力和在第一条件的温度低的温度下被施加，在第一条件下的热处理后，与原料是通过在第一重复的热处理而结晶 条件和第二维护状态。

    Capacitor electrode, method of manufacturing the same, ferroelectric memory and semiconductor memory device
    2.
    发明公开
    Capacitor electrode, method of manufacturing the same, ferroelectric memory and semiconductor memory device 审中-公开
    Kondensatorelektrode，derren Herstellungsmethode，ferroelektrischer Speicher，und Halbleiterspeicheranordnung

    公开(公告)号：EP1463095A3

    公开(公告)日：2005-09-14

    申请号：EP04251650.0

    申请日：2004-03-23

    申请人： SEIKO EPSON CORPORATION

    发明人： Kijima, Takeshi ,  Ohashi, Koji ,  Natori, Eiji

    IPC分类号： H01L21/02 ,  H01L21/334

    CPC分类号： H01L28/65 ,  H01L28/55

    摘要： The present invention relates to a method of manufacturing an electrode which includes forming an electrode (40) over a substrate (10). Initial crystal nuclei (20) of an electrode material are formed over the substrate in an island pattern, and then grown layers (30) of the electrode material are formed by causing the initial crystal nuclei to be grown. A substrate temperature (200°C to 600°C) when forming the initial crystal nuclei is higher than a substrate temperature when forming the grown layers (

    摘要翻译： 本发明涉及一种制造电极的方法，包括在基片（10）上方形成电极（40）。 以岛状图案形成电极材料的初始晶核（20），然后通过使初始晶核生长而形成电极材料的生长层（30）。 当形成初始晶核时，衬底温度（200℃至600℃）高于形成生长层（<200℃）时的衬底温度。

    Ceramic film and manufacturing method therefor, semiconductor device and piezoelectric device
    6.
    发明公开
    Ceramic film and manufacturing method therefor, semiconductor device and piezoelectric device 审中-公开
    陶瓷膜和过程及其制造，半导体器件和压电装置

    公开(公告)号：EP2248765A1

    公开(公告)日：2010-11-10

    申请号：EP10159795.3

    申请日：2001-06-14

    申请人： Seiko Epson Corporation

    发明人： Natori, Eiji ,  Furuyama, Koichi ,  Tasaki, Yuuzo

    IPC分类号： C01G1/00

    CPC分类号： C04B35/475 ,  C04B35/491 ,  C04B35/624 ,  H01L21/02197 ,  H01L21/02282 ,  H01L21/31691 ,  H01L41/1878 ,  H01L41/318

    摘要： A method of manufacturing a ceramic film includes a step of forming a ceramic film 30 by crystallizing a raw material body 20. The raw material body 20 contains different types of raw materials in a mixed state. The different types of raw materials differ from one another in at least one of a crystal growth condition and a crystal growth mechanism in the crystallization of the raw materials. According to this manufacturing method, a surface morphology of the ceramic film can be improved.

    摘要翻译： 制造陶瓷电影的方法包括通过结晶剃刀体20的原料主体20包含不同类型的原料以混合状态形成陶瓷膜30的步骤。 的种类不同的原料的彼此区分在晶体生长条件，并在原料的结晶的晶体生长机理的至少一种。 。根据该制造方法，在陶瓷的表面形态的薄膜可以得到改善。