公开(公告)号：EP1052701A2

公开(公告)日：2000-11-15

申请号：EP00110377.9

申请日：2000-05-15

申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

发明人： Murakami, Satoshi ,  Hirakata, Yoshiharu ,  Fujimoto, Etsuko ,  Yamazaki, Yu ,  Yamazaki, Shunpei

IPC分类号： H01L29/92

CPC分类号： H01L28/40 ,  H01L27/1255 ,  H01L29/78633 ,  H01L29/78636 ,  H01L29/78645

摘要： A highly reliable capacitor, a semiconductor device having high operating performance and reliability, and a manufacturing method thereof are provided. A capacitor formed of a first conductive film 102, a dielectric 103 made of an insulating material, and a second conductive film 104 is characterized in that a pin hole 106 formed by chance in the dielectric 103 is filled up with an insulating material (filler) 107 made of a resin material. This can prevent short circuit between the first conductive film 102 and the second conductive film 104. The capacitor is used as a storage capacitor provided in a pixel of a semiconductor device.

公开(公告)号：EP2154719A2

公开(公告)日：2010-02-17

申请号：EP09013908.0

申请日：2000-02-11

申请人： Semiconductor Energy Laboratory Co, Ltd.

发明人： Yamazaki, Shunpei ,  Tanaka, Yukio ,  Koyama, Jun ,  Osame, Mitsuaki ,  Murakami, Satoshi ,  Ohnuma, Hideto ,  Fujimoto, Etsuko ,  Kitakado, Hidehito

IPC分类号： H01L27/12 ,  H01L21/77 ,  G02F1/1362

CPC分类号： G02F1/13454 ,  G02F1/136209 ,  G02F1/136213 ,  H01L27/1255 ,  H01L27/3244 ,  H01L27/3248 ,  H01L27/3265 ,  H01L27/3272 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78624 ,  H01L29/78627 ,  H01L29/78633 ,  H01L29/78645 ,  H01L29/78675 ,  H01L51/5246 ,  H01L51/5284 ,  H01L2227/323

摘要： The invention provides a semiconductor device including a pixel unit and a drive circuit unit in a same substrate, wherein LDD regions of a drive TFT forming the drive circuit unit are so arranged as will be overlapped on a gate wiring of the drive TFT to sandwich the gate insulating film of the drive TFT therebetween, wherein LDD regions of a pixel TFT forming the pixel unit are so arranged as will not be overlapped on a gate wiring layer of the pixel TFT so will not to sandwich the gate insulating film of the pixel TFT therebetween, wherein a storage capacitor of the pixel unit are formed by a light-shielding film formed over the pixel TFT, an oxide of the light-shielding film and a pixel electrode.

摘要翻译： 本发明提供一种半导体装置，在同一基板上具有像素部和驱动电路部，构成该驱动电路部的驱动TFT的LDD区域重叠在驱动用TFT的栅极配线上， 其中形成像素单元的像素TFT的LDD区域被布置为不会重叠在像素TFT的栅极布线层上，从而不会夹住像素TFT的栅极绝缘膜 其中，像素单元的存储电容器由形成在像素TFT上的遮光膜，遮光膜的氧化物和像素电极形成。

公开(公告)号：EP1041622A1

公开(公告)日：2000-10-04

申请号：EP00106863.4

申请日：2000-03-30

申请人： SEL SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

发明人： Ohtani, Hisashi ,  Nakazawa, Misako ,  Murakami, Satoshi ,  Fujimoto, Etsuko

IPC分类号： H01L21/768

CPC分类号： H01L21/76885 ,  G02F1/136227 ,  H01L21/76802 ,  H01L21/76838 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/1255 ,  H01L29/41733 ,  H01L29/458 ,  H01L29/78636 ,  H01L2924/0002 ,  H01L2924/00

摘要： The object is to pattern extremely fine integrated circuits by forming fine contact holes. The dry etching method is employed to form contact holes to pattern a wiring (114), using a mask made of metallic film (112) and an organic material as an inter-layer insulating film (111) for covering switching elements and each of the wirings.

摘要翻译： 目的是通过形成精细的接触孔来图案化精细的集成电路。 使用干蚀刻方法，使用由金属膜（112）制成的掩模和作为用于覆盖开关元件的层间绝缘膜（111）的有机材料的布线（114）来形成接触孔，以覆盖开关元件 布线。

公开(公告)号：EP2259135A2

公开(公告)日：2010-12-08

申请号：EP10176397.7

申请日：2000-05-15

申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

发明人： Murakami, Satoshi ,  Hirakata, Yoshiharu ,  Fujimoto, Etsuko ,  Yamazaki, Yu ,  Yamazaki, Shunpei

IPC分类号： G02F1/1362 ,  G02F1/161 ,  H01L27/12

CPC分类号： H01L28/40 ,  H01L27/1255 ,  H01L29/78633 ,  H01L29/78636 ,  H01L29/78645

摘要： A semiconductor device comprising a thin film transistor formed on an insulator, said thin film transistor comprising at least a source region, a drain region, a channel forming region, and a gate electrode with a gate insulating film interposed therebetween; and a pixel comprising a pixel electrode connected with said source or said drain region and comprising a storage capacitor, wherein said storage capacitor is formed of a shielding film provided over said thin film transistor with an insulating film interposed therebetween, an insulating layer covering said shielding film, and said pixel electrode provided in contact with said insulating layer, and wherein said insulating layer has a hole which is filled with an insulating material comprising a resin material.

摘要翻译： 一种半导体器件，包括形成在绝缘体上的薄膜晶体管，所述薄膜晶体管至少包括源极区，漏极区，沟道形成区和栅电极，栅极绝缘膜介于其间; 以及像素，包括与所述源极或所述漏极区域连接的像素电极，并且包括存储电容器，其中所述存储电容器由设置在所述薄膜晶体管上的屏蔽膜形成，绝缘膜插入在所述薄膜晶体管之间，覆盖所述屏蔽层的绝缘层 膜和与所述绝缘层接触的所述像素电极，并且其中所述绝缘层具有填充有包括树脂材料的绝缘材料的孔。

公开(公告)号：EP1052701A3

公开(公告)日：2005-01-12

申请号：EP00110377.9

申请日：2000-05-15

申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

发明人： Murakami, Satoshi ,  Hirakata, Yoshiharu ,  Fujimoto, Etsuko ,  Yamazaki, Yu ,  Yamazaki, Shunpei

IPC分类号： G02F1/1362 ,  G02F1/161 ,  H01L27/12

CPC分类号： H01L28/40 ,  H01L27/1255 ,  H01L29/78633 ,  H01L29/78636 ,  H01L29/78645

摘要： A highly reliable capacitor, a semiconductor device having high operating performance and reliability, and a manufacturing method thereof are provided. A capacitor formed of a first conductive film 102, a dielectric 103 made of an insulating material, and a second conductive film 104 is characterized in that a pin hole 106 formed by chance in the dielectric 103 is filled up with an insulating material (filler) 107 made of a resin material. This can prevent short circuit between the first conductive film 102 and the second conductive film 104. The capacitor is used as a storage capacitor provided in a pixel of a semiconductor device.

摘要翻译： 提供高可靠性电容器，具有高操作性能和可靠性的半导体器件及其制造方法。 由第一导电膜102，由绝缘材料制成的电介质103和第二导电膜104形成的电容器的特征在于，在电介质103中偶然形成的销孔106填充有绝缘材料（填料） 107由树脂材料制成。 这可以防止第一导电膜102和第二导电膜104之间的短路。电容器用作设置在半导体器件的像素中的存储电容器。