利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

1 条记录 (耗时 0.007 秒)

    ELECTROSTATIC DRIVE MEMS ELEMENT, MANUFACTURING METHOD THEREOF, OPTICAL MEMS ELEMENT, OPTICAL MODULATION ELEMENT, GLV DEVICE, AND LASER DISPLAY
    1.
    发明公开
    ELECTROSTATIC DRIVE MEMS ELEMENT, MANUFACTURING METHOD THEREOF, OPTICAL MEMS ELEMENT, OPTICAL MODULATION ELEMENT, GLV DEVICE, AND LASER DISPLAY 审中-公开
    静电驱动MEMS元件，工艺制作，光学MEMS元件，光调制元件，GLV设备和激光显示

    公开(公告)号：EP1460035A1

    公开(公告)日：2004-09-22

    申请号：EP02805882.4

    申请日：2002-12-16

    申请人： Sony Corporation

    发明人： IKEDA, Koichi, Sony Corporation

    IPC分类号： B81B3/00 ,  B81C1/00 ,  G02B26/02 ,  G02B5/18

    CPC分类号： B81C1/0015 ,  B81B2201/045 ,  B81B2203/04 ,  B81C2201/0109 ,  B81C2201/0173 ,  B81C2203/0109 ,  G02B26/0841

    摘要： The present invention provides an electrostatic drive type MEMS device and a manufacturing method thereof, in which flattening the surface of a driving side electrode, improving performance, and further the improvements of the degree of freedom of designing in the manufacturing process are implemented. In addition, the present invention provides a GLV device using this MEMS device, and further a laser display using this GLV device.
    In the present invention an electrostatic drive type MEMS device includes a substrate side electrode and a beam having a driving side electrode driven by electrostatic attraction force or electrostatic repulsion force that acts between the substrate side electrode and driving side electrode, in which the substrate side electrode is formed of an impurities-doped conductive semiconductor region in a semiconductor substrate.

    摘要翻译： 本发明提供了对静电驱动型MEMS器件及其制造方法，其中，展平的驱动侧电极的表面上，提高性能，并进一步在制造过程的设计来实现的自由度的改进。 此外，本发明提供使用此MEMS器件的GLV装置，以及使用该GLV装置还激光显示器。 在本发明中，以静电驱动型MEMS器件包括基板侧电极和具有由静电引力或静电斥力驱动的驱动侧电极的光束做了基板侧电极和驱动侧电极，在它们之间作用 基板侧电极中的半导体的导电性基板上形成杂质掺杂的半导体区域构成。