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    METHODS FOR NANOSTRUCTURE DOPING
    2.
    发明公开
    METHODS FOR NANOSTRUCTURE DOPING 审中-公开
    法制备纳米结构资金

    公开(公告)号：EP1938381A2

    公开(公告)日：2008-07-02

    申请号：EP06803951.0

    申请日：2006-09-21

    申请人： Nanosys, Inc.

    发明人： PAN, Yaoling ,  CHEN, Jian ,  LEON, Francisco ,  MOSTARSHED, Shahriar ,  ROMANO, Linda T. ,  SAHI, Vijendra ,  STUMBO, David P.

    IPC分类号： H01L29/06 ,  H01L21/225

    CPC分类号： H01L29/0665 ,  B81C1/00698 ,  B81C2201/0173 ,  B82Y10/00 ,  H01L21/2256 ,  H01L21/268 ,  H01L29/0673

    摘要： Methods of doping nanostructures, such as nanowires, are disclosed. The methods provide a variety of approaches for improving existing methods of doping nanostructures. The embodiments include the use of a sacrificial layer to promote uniform dopant distribution within a nanostructure during post-nanostructure synthesis doping. In another embodiment, a high temperature environment is used to anneal nanostructure damage when high energy ion implantation is used. In another embodiment rapid thermal annealing is used to drive dopants from a dopant layer on a nanostructure into the nanostructure. In another embodiment a method for doping nanowires on a plastic substrate is provided that includes depositing a dielectric stack on a plastic substrate to protect the plastic substrate from damage during the doping process. An embodiment is also provided that includes selectively using high concentrations of dopant materials at various times in synthesizing nanostructures to realize novel crystallographic structures within the resulting nanostructure.

    Method of manufacturing resonant transducer
    4.
    发明公开
    Method of manufacturing resonant transducer 有权
    一种用于制造谐振转换器处理

    公开(公告)号：EP2599747A3

    公开(公告)日：2014-10-15

    申请号：EP12195311.1

    申请日：2012-12-03

    申请人： Yokogawa Electric Corporation

    发明人： Noda, Ryuichiro ,  Yoshida, Takashi

    IPC分类号： B81C1/00 ,  H03H3/007 ,  H04R31/00

    CPC分类号： H04R31/00 ,  B81B2201/0271 ,  B81C1/0015 ,  B81C1/00666 ,  B81C2201/0164 ,  B81C2201/0173 ,  H03H3/0072 ,  Y10T29/49005

    摘要： A method of manufacturing a resonant transducer having a vibration beam includes: (a) providing an SOI substrate including: a first silicon layer; a silicon oxide layer on the first silicon layer; and a second silicon layer on the silicon oxide layer; (b) forming a first gap and second gap through the second silicon layer by etching the second silicon layer using the silicon oxide layer as an etching stop layer; (c) forming an impurity diffusion source layer on the second silicon layer; (d) forming an impurity diffused layer in a surface portion of the second silicon layer; (e) removing the impurity diffusion source layer through etching; and (f) removing at least a portion of the silicon oxide layer through etching such that an air gap is formed between the first silicon layer and a region of the second silicon layer surrounded by the first and second gaps.

    ELECTROSTATIC DRIVE MEMS ELEMENT, MANUFACTURING METHOD THEREOF, OPTICAL MEMS ELEMENT, OPTICAL MODULATION ELEMENT, GLV DEVICE, AND LASER DISPLAY
    5.
    发明公开
    ELECTROSTATIC DRIVE MEMS ELEMENT, MANUFACTURING METHOD THEREOF, OPTICAL MEMS ELEMENT, OPTICAL MODULATION ELEMENT, GLV DEVICE, AND LASER DISPLAY 审中-公开
    静电驱动MEMS元件，工艺制作，光学MEMS元件，光调制元件，GLV设备和激光显示

    公开(公告)号：EP1460035A1

    公开(公告)日：2004-09-22

    申请号：EP02805882.4

    申请日：2002-12-16

    申请人： Sony Corporation

    发明人： IKEDA, Koichi, Sony Corporation

    IPC分类号： B81B3/00 ,  B81C1/00 ,  G02B26/02 ,  G02B5/18

    CPC分类号： B81C1/0015 ,  B81B2201/045 ,  B81B2203/04 ,  B81C2201/0109 ,  B81C2201/0173 ,  B81C2203/0109 ,  G02B26/0841

    摘要： The present invention provides an electrostatic drive type MEMS device and a manufacturing method thereof, in which flattening the surface of a driving side electrode, improving performance, and further the improvements of the degree of freedom of designing in the manufacturing process are implemented. In addition, the present invention provides a GLV device using this MEMS device, and further a laser display using this GLV device.
    In the present invention an electrostatic drive type MEMS device includes a substrate side electrode and a beam having a driving side electrode driven by electrostatic attraction force or electrostatic repulsion force that acts between the substrate side electrode and driving side electrode, in which the substrate side electrode is formed of an impurities-doped conductive semiconductor region in a semiconductor substrate.

    摘要翻译： 本发明提供了对静电驱动型MEMS器件及其制造方法，其中，展平的驱动侧电极的表面上，提高性能，并进一步在制造过程的设计来实现的自由度的改进。 此外，本发明提供使用此MEMS器件的GLV装置，以及使用该GLV装置还激光显示器。 在本发明中，以静电驱动型MEMS器件包括基板侧电极和具有由静电引力或静电斥力驱动的驱动侧电极的光束做了基板侧电极和驱动侧电极，在它们之间作用 基板侧电极中的半导体的导电性基板上形成杂质掺杂的半导体区域构成。

    Method of manufacturing resonant transducer
    6.
    发明公开
    Method of manufacturing resonant transducer 有权
    赫尔斯特朗·赫斯特伦

    公开(公告)号：EP2599747A2

    公开(公告)日：2013-06-05

    申请号：EP12195311.1

    申请日：2012-12-03

    申请人： Yokogawa Electric Corporation

    发明人： Noda, Ryuichiro ,  Yoshida, Takashi

    IPC分类号： B81C1/00

    CPC分类号： H04R31/00 ,  B81B2201/0271 ,  B81C1/0015 ,  B81C1/00666 ,  B81C2201/0164 ,  B81C2201/0173 ,  H03H3/0072 ,  Y10T29/49005

    摘要： A method of manufacturing a resonant transducer having a vibration beam includes: (a) providing an SOI substrate including: a first silicon layer; a silicon oxide layer on the first silicon layer; and a second silicon layer on the silicon oxide layer; (b) forming a first gap and second gap through the second silicon layer by etching the second silicon layer using the silicon oxide layer as an etching stop layer; (c) forming an impurity diffusion source layer on the second silicon layer; (d) forming an impurity diffused layer in a surface portion of the second silicon layer; (e) removing the impurity diffusion source layer through etching; and (f) removing at least a portion of the silicon oxide layer through etching such that an air gap is formed between the first silicon layer and a region of the second silicon layer surrounded by the first and second gaps.

    摘要翻译： 制造具有振动束的谐振换能器的方法包括：（a）提供SOI衬底，其包括：第一硅层; 在所述第一硅层上的氧化硅层; 和在氧化硅层上的第二硅层; （b）通过使用氧化硅层作为蚀刻停止层蚀刻第二硅层，形成通过第二硅层的第一间隙和第二间隙; （c）在第二硅层上形成杂质扩散源层; （d）在第二硅层的表面部分形成杂质扩散层; （e）通过蚀刻去除杂质扩散源层; 和（f）通过蚀刻去除氧化硅层的至少一部分，使得在第一硅层和由第一和第二间隙围绕的第二硅层的区域之间形成气隙。

    Verfahren zum Herstellen von räumlich strukturierten Bauteilen
    8.
    发明公开
    Verfahren zum Herstellen von räumlich strukturierten Bauteilen 失效
    维尔法赫姆·希尔斯滕

    公开(公告)号：EP0865075A2

    公开(公告)日：1998-09-16

    申请号：EP98102579.4

    申请日：1998-02-14

    申请人： Micronas Intermetall GmbH

    发明人： Igel, Günther, Dipl.-Ing. ,  Mall, Martin, Dr. Dipl.-Phys.

    IPC分类号： H01L21/24 ,  H01L21/48 ,  H01L21/60

    CPC分类号： B81C1/00666 ,  B81B2203/0136 ,  B81C2201/0136 ,  B81C2201/0173

    摘要： Die Erfindung betrifft ein Verfahren zum Herstellen von räumlich strukturierten Bauteilen 10 aus einem Körper 1, bei dem auf der Rückseite des Körpers 1 eine Verzögerungsschicht 8 mit Durchbrechungen 9 zum Verzögern eines Abtragvorgangs des Materials des Körpers vorgesehen wird, auf der Rückseite des Körpers 1 Gebiete 5 aus einem migrationsfähigen Material aufgebracht werden, der Körper 1 einem thermischen Migrationsverfahren unterzogen wird, so daß Migrationsbereiche 7 entstehen, und dann die Bauteile 10 in einem einzigen Abtragvorgang aus dem Körper 1 herausgetrennt und die Migrationsbereiche 7 freigelegt werden.

    摘要翻译： 该制造方法包括使用具有设置有用于电子部件的主要区域的前表面的半导体晶片和设置有提供多个间隔区域的迁移材料层的后表面。 对半导体晶片进行热迁移工艺以形成间隔的迁移区域（7），随后通过蚀刻工艺去除这些区域之间的材料。