公开(公告)号：EP2663521B1

公开(公告)日：2017-10-25

申请号：EP12709971.1

申请日：2012-01-13

Applicant: SmartTip B.V.

Inventor： SARAJLIC, Edin

IPC: B81C1/00 ,  B01L3/00

CPC classification number: G01R3/00 ,  B01L3/502707 ,  B81B2201/057 ,  B81B2203/0118 ,  B81B2203/0338 ,  B81C1/00119 ,  B81C2201/0109 ,  Y10T29/49002

公开(公告)号：EP1752415B1

公开(公告)日：2013-03-27

申请号：EP06016572.7

申请日：2006-08-08

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Izumi, Konami ,  Yamaguchi, Mayumi ,  Tateishi, Fuminori

IPC: B81C1/00

CPC classification number: B81C1/0015 ,  B81B2203/0118 ,  B81C1/00404 ,  B81C2201/0109

公开(公告)号：EP2462050A1

公开(公告)日：2012-06-13

申请号：EP10737938.0

申请日：2010-08-05

Applicant: STMicroelectronics Srl

Inventor： CORONA, Pietro ,  LOSA, Stefano ,  GELMI, Ilaria ,  CAMPEDELLI, Roberto

IPC: B81C1/00

CPC classification number: B81C1/00476 ,  B81B2201/0264 ,  B81B2203/0109 ,  B81B2203/0127 ,  B81C1/00047 ,  B81C2201/0109

Abstract: A process for manufacturing a MEMS device, wherein a bottom silicon region (4b) is formed on a substrate and on an insulating layer (3); a sacrificial region (5a) of dielectric is formed on the bottom region; a membrane region (21), of semiconductor material, is epitaxially grown on the sacrificial region; the membrane region is dug as far as the sacrificial region so as to form through trenches (15); the side wall and the bottom of the through trenches are completely coated in a conformal way with a porous material layer (16); at least one portion of the sacrificial region is selectively removed through the porous material layer and forms a cavity (18); and the through trenches are filled with filling material (20a) so as to form a monolithic membrane suspended above the cavity (18).

Abstract translation: 一种用于制造微机电系统器件，worin底部硅区域形成在基板上并与绝缘层的过程; 电介质的牺牲区域形成在底部区域; 膜区域，半导体材料制成的，外延生长在牺牲区域; 膜区域被向下挖至牺牲区域，以便形成通孔的; 所述侧壁和所述孔的底部完全被呼叫涂覆在多孔材料层的共形方式; 所述牺牲区域的至少一个部分通过多孔材料层选择性地去除，并且形成的空腔; 和孔中填充有填充材料，以形成悬浮在腔上方的整体式膜。 其它实施方案涉及MEMS器件和压力传感器。

公开(公告)号：EP2453470A1

公开(公告)日：2012-05-16

申请号：EP11354065.2

申请日：2011-11-09

Applicant: Commissariat à l'Énergie Atomique et aux Énergies Alternatives ,  STMicroelectronics (Crolles 2) SAS

Inventor： Desplobain, Sébastien ,  Gaillard, Frederic-Xavier ,  Morand, Yves ,  Nemouchi, Fabrice

IPC: H01L21/306 ,  B81B1/00

CPC classification number: H01L21/306 ,  B81C1/0038 ,  B81C2201/0109 ,  B81C2201/0115

Abstract: Le procédé de formation d'une structure multicouches sur un substrat comprend la prévision d'un empilement comprenant successivement une couche de blocage de trous d'électrons, une première couche (6) en matériau semi-conducteur dopé de type N ayant une concentration en éléments dopants supérieure ou égale à 10 18 atomes/cm 3 ou dopé de type P, et une deuxième couche en matériau semi-conducteur de nature différente. Un plot de contact électrique latéral (12) entre la première couche (6) et le substrat est réalisé et le matériau de la première couche est soumis à un traitement anodique dans un électrolyte (18).

Abstract translation: 该方法包括提供连续包含电子空穴阻挡层的叠层，由掺杂浓度大于或等于10倍18原子/立方厘米或P掺杂半导体材料的N掺杂半导体材料制成的层（6），以及 由不同性质的半导体材料制成的另一层（8）。 在前一层和基底之间形成横向电接触焊盘（12）。 前一层的材料在电解质（18）即氢氟酸基电解质中进行阳极处理。

公开(公告)号：EP2258655B1

公开(公告)日：2012-04-25

申请号：EP09161994.0

申请日：2009-06-05

Applicant: Acreo AB

Inventor： Schöner, Adolf ,  Vieider, Christian

IPC: B81C1/00

CPC classification number: B81C1/00047 ,  B81B2203/0118 ,  B81B2203/0127 ,  B81C1/0019 ,  B81C2201/0109

公开(公告)号：EP2383749A2

公开(公告)日：2011-11-02

申请号：EP11175921.3

申请日：2004-02-12

Applicant: Nantero, Inc.

Inventor： Jaiprakash, Venkatachalam ,  Ward, Jonathan ,  Rueckes, Thomas ,  Segal, Brent

IPC: G11C23/00 ,  G11C13/02 ,  G11C14/00 ,  H01H59/00 ,  B81B3/00 ,  H01H1/00 ,  B81C1/00 ,  B82Y10/00

CPC classification number: G11C23/00 ,  B81B2201/016 ,  B81B2203/0127 ,  B81C1/00142 ,  B81C2201/0109 ,  B82Y10/00 ,  G11C13/025 ,  G11C14/00 ,  G11C2213/16 ,  G11C2213/77 ,  G11C2213/81 ,  H01H1/0094

Abstract: A discrete electro-mechanical device includes a structure 182 having an electrically-conductive trace. A defined patch of nanotube fabric 154 is disposed in spaced relation to the trace; and the defined patch of nanotube fabric 154 is electromechanically deflectable between a first and second state. In the first state, the nanotube article is in contact with the trace. A low resistance signal path is in electrical communication with the defined patch of nanofabric 154. Under certain embodiments, the structure 182 includes a defined gap 180 into which the electrically conductive trace is disposed.

Abstract translation: 分立的机电装置包括具有导电迹线的结构182。 纳米管织物154的限定片段与纹迹间隔开设置; 并且限定的纳米管织物片段154在第一状态和第二状态之间可机电偏转。 在第一状态下，纳米管制品与痕迹接触。 低电阻信号路径与限定的纳米片154的电源电连通。在某些实施例中，结构182包括限定的间隙180，导电迹线被布置在其中。

公开(公告)号：EP2138454B1

公开(公告)日：2011-03-16

申请号：EP09290474.7

申请日：2009-06-22

Applicant: Commissariat à l'Énergie Atomique et aux Énergies Alternatives

Inventor： Perruchot, François ,  Diem, Bernard ,  Larrey, Vincent ,  Clavelier, Laurent ,  Defay, Emmanuel

IPC: B81C1/00 ,  H03H3/007

CPC classification number: B81C1/00595 ,  B81B2201/0271 ,  B81C2201/0109 ,  B81C2201/014

公开(公告)号：EP2035326A1

公开(公告)日：2009-03-18

申请号：EP07728389.3

申请日：2007-04-23

Applicant: Robert Bosch GmbH

Inventor： BENZEL, Hubert ,  ARMBRUSTER, Simon ,  SCHELLING, Christoph ,  HOECHST, Arnim ,  FEYH, Ando

IPC: B81B3/00 ,  G01J5/10 ,  G01K7/01

CPC classification number: B81B3/0081 ,  B81B2201/0278 ,  B81B2203/0109 ,  B81B2207/015 ,  B81C2201/0109 ,  G01J5/06 ,  G01J5/20

Abstract: The invention relates to a sensor, especially for location-independent detection. Said sensor comprises a substrate (1), at least one microstructured sensor element (52) having an electrical property that varies with temperature, and at least one membrane (36.1) above a cavern (26, 74, 94), the sensor element (52) being arranged on the lower face of the at least one membrane (36.1), and the sensor element (52) being connected via leads (60, 62; 98-1, 98-2, 100-1, 100-2) which extend in, on or below the membrane (36.1). According to the invention, especially a plurality of sensor elements (52) can be configured as diode pixels in a monocrystalline layer that is formed by epitaxial growth. In the membrane (36.1), suspension springs (70) can be configured that receive the individual sensor elements (52) in an elastic and insulating manner.

公开(公告)号：EP1460035A4

公开(公告)日：2009-01-07

申请号：EP02805882

申请日：2002-12-16

Applicant: SONY CORP

Inventor： IKEDA KOICHI

IPC: G02B26/02 ,  B81B3/00 ,  B81C1/00 ,  G02B5/18 ,  G02B26/08

CPC classification number: B81C1/0015 ,  B81B2201/045 ,  B81B2203/04 ,  B81C2201/0109 ,  B81C2201/0173 ,  B81C2203/0109 ,  G02B26/0841

Abstract: An electrostatic MEMS element for flattening a drive side electrode surface and improving its performance as well as for improving degree of design freedom in a manufacturing process. A manufacturing method of the electrostatic MEMS element is also disclosed. Moreover, a GLV device using the MEMS element and a laser display using the GLV device are also disclosed. The electrostatic MEMS element includes a substrate side electrode and a beam having a drive side electrode driven by an electrostatic attracting force or electrostatic repulsive force functioning between the substrate side electrode and the drive side electrode. The substrate side electrode is formed in a conductive semiconductor region having impurities in the semiconductor substrate so as to constitute an electrostatic drive MEMS element.

公开(公告)号：EP1904398A2

公开(公告)日：2008-04-02

申请号：EP06765888.0

申请日：2006-06-27

Applicant: Philips Intellectual Property & Standards GmbH ,  Koninklijke Philips Electronics N.V.

Inventor： DUEMLING, Martin ,  POHLMANN, Hauke ,  LANGEREIS, Geert ,  DEKKER, Ronald

IPC: B81C1/00

CPC classification number: B81C1/00182 ,  B81B2203/0118 ,  B81B2203/0315 ,  B81C1/00047 ,  B81C2201/0109

Abstract: The device (100) comprises a substrate (10) of a semiconductor material with a first and an opposite second surface (1,2) and a microelectromechanical (MEMS) element (50) which is provided with a fixed and a movable electrode (52, 51) that is present in a cavity (30). One of the electrodes (51,52) is defined in the substrate (10). The movable electrode (51) is movable towards and from the fixed electrode (52) between a first gapped position and a second position. The cavity (30) is opened through holes (18) in the substrate (10) that are exposed on the second surface (2) of the substrate (10). The cavity (30) has a height that is defined by at least one post (15) in the substrate (10), which laterally substantially surrounds the cavity (15).