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    Gallium nitride single crystal substrate and method of producing the same
    5.
    发明公开
    Gallium nitride single crystal substrate and method of producing the same 有权
    Einkristall Galliumnitridsubstrat und Verfahren zu dessen Herstellung

    公开(公告)号：EP0967664A1

    公开(公告)日：1999-12-29

    申请号：EP99110229.4

    申请日：1999-05-26

    申请人： Sumitomo Electric Industries, Ltd.

    发明人： Motoki, Kensaku ,  Okahisa, Takuji ,  Matsumoto, Naoki ,  Matsushima, Masato

    IPC分类号： H01L33/00 ,  H01L21/205

    CPC分类号： H01L33/0075 ,  C30B25/02 ,  C30B29/406 ,  H01L21/02395 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02647 ,  H01L21/02664 ,  H01L33/0079

    摘要： An n-type GaN substrate having a safe n-type dopant instead of Si which is introduced by perilous silane gas. The safe n-dopant is oxygen. An oxygen doped n-type GaN free-standing crystal is made by forming a mask on a GaAs substrate, making apertures on the mask for revealing the undercoat GaAs, growing GaN films through the apertures of the mask epitaxially on the GaAs substrate from a material gas including oxygen, further growing the GaN film also upon the mask for covering the mask, eliminating the GaAs substrate and the mask, and isolating a freestanding GaN single crystal. The GaN is an n-type crystal having carriers in proportion to the oxygen concentration.

    摘要翻译： 具有安全的n型掺杂剂而不是由危险的硅烷气体引入的Si的n型GaN衬底。 安全的n-掺杂剂是氧气。 通过在GaAs衬底上形成掩模来制造掺杂氧的n型GaN独立晶体，在掩模上形成用于露出底涂层GaAs的孔，通过GaAs衬底上外延的掩模的孔从材料生长GaN膜 包括氧的气体，还在用于覆盖掩模的掩模上进一步生长GaN膜，消除GaAs衬底和掩模，并隔离独立的GaN单晶。 GaN是具有与氧浓度成比例的载流子的n型晶体。

    Method of growing gallium nitride crystal
    8.
    发明公开
    Method of growing gallium nitride crystal 审中-公开
    Wachstumsverfahrenfüreinen Galliumnitridkristall

    公开(公告)号：EP1884580A2

    公开(公告)日：2008-02-06

    申请号：EP07015013.1

    申请日：2007-07-31

    申请人： Sumitomo Electric Industries, Ltd.

    发明人： Hirota, Ryu ,  Motoki, Kensaku ,  Nakahata, Seiji ,  Okahisa, Takuji ,  Uematsu, Koji

    IPC分类号： C30B25/02 ,  C30B29/40

    CPC分类号： C30B29/406 ,  C30B25/183

    摘要： A method of growing a gallium nitride crystal according to the present invention includes: a step of partially forming, on a ground substrate (U), a mask (M) inhibiting epitaxial growth of the crystal; and a step of epitaxially growing the crystal by vapor phase deposition on the ground substrate (U) on which the mask (M) is formed, wherein in the step of epitaxially growing the crystal, the crystal is grown under a first growth condition wherein a growth rate Vj expressed in µm/h unit and a growth temperature T expressed in absolute temperature are expressed by (a 1 / T + b 1 ) 2 / T + b 2 ) using coefficients a 1 = -4.39 × 10 5 , b 1 = 3.87 × 10 2 , a 2 = -7.36 × 10 5 , and b 2 =7.37 × 10 2 . In this manner, the dislocation density in the crystal is reduced.

    摘要翻译： 根据本发明的生长氮化镓晶体的方法包括：在接地衬底（U）上部分地形成抑制晶体的外延生长的掩模（M）的步骤; 以及通过气相沉积在其上形成有掩模（M）的接地衬底（U）上外延生长晶体的步骤，其中在晶体外延生长的步骤中，晶体在第一生长条件下生长，其中， 用（a 1 / T + b 1）

    A method of producing a gallium nitride-type light emitting semiconductor device
    9.
    发明公开
    A method of producing a gallium nitride-type light emitting semiconductor device 审中-公开
    维尔法赫尔·赫斯特伦·艾伦·莱特

    公开(公告)号：EP1804305A1

    公开(公告)日：2007-07-04

    申请号：EP07007810.0

    申请日：1999-05-27

    申请人： Sumitomo Electric Industries, Ltd.

    发明人： Motoki, Kensaku

    IPC分类号： H01L33/00 ,  H01S5/323

    CPC分类号： H01L33/20 ,  H01L33/16 ,  H01L33/32 ,  H01S5/0202 ,  H01S5/32341

    摘要： A method of producing a gallium nitride-type light emitting semiconductor device comprising the steps of growing GaN-type semiconductor epitaxial layers on a (0001) top surface gallium nitride single crystal substrate; forming an electrode on the GaN-type semiconductor epitaxial layers; forming an electrode on a bottom surface of the gallium nitride single crystal substrate; forming scribing lines on the bottom surface of the gallium nitride single crystal substrate along {1-100} planes of the gallium nitride single crystal substrate; cutting the gallium nitride single crystal substrate into chips by cleaving along the scribed lines and obtaining light emitting device chips having sides consisting of {1-100} planes made by natural cleavage.

    摘要翻译： 一种制造氮化镓型发光半导体器件的方法，包括在（0001）顶面氮化镓单晶衬底上生长GaN型半导体外延层的步骤; 在所述GaN型半导体外延层上形成电极; 在氮化镓单晶衬底的底表面上形成电极; 在氮化镓单晶衬底沿{1-100}面的氮化镓单晶衬底的底面上形成刻划线; 通过沿划线切割氮化镓单晶衬底切割成芯片，并获得具有由天然裂解制成的{1-100}面的侧面的发光器件芯片。