Abstract:
[Issues to be solved] To provide Au alloy wire for ball bonding, which is superior wire strength, and also is superior at formability of molten ball and roundness of compressed ball, moreover is superior at stitch bondability; is available for high density wiring of semiconductor divices. [Solution means] Au alloy wire for ball bonding comprising: 15 - 50 wt ppm Mg, 10 - 30 wt ppm Ca, 5 - 20 wt ppm Eu, 5 - 20 wt ppm Y, 5 - 20 wt ppm La and residual Au is more than 99.998 wt % purity, moreover, purity of more than 99.98 wt % Au, mass of additive Ca is less than the value of total amount of additive Eu and additive La, and mass of additive Y is less than the value of total amount of additive Ca and additive Eu, and mass of 20 - 40 wt ppm Mg.
Abstract:
[PROBLEMS] To provide a gold alloy wire which is excellent in the property of forming a melt ball, suitability for stitch bonding, and wire strength and, despite this, gives a press-bonded ball having excellent circularity, and which is usable in high-density wiring for a semiconductor device. [MEANS FOR SOLVING PROBLEMS] The gold alloy wire for use in ball bonding is made of a gold alloy comprising 10-50 mass ppm magnesium (Mg), 5-20 mass ppm europium (Eu), 2-9 mass ppm calcium (Ca), and gold (Au) having a purity of 99.995 mass% or higher as the remainder, wherein the calcium (Ca) content is up to half the europium (Eu) content by mass.
Abstract:
To provide a covered Cu wire for ball bonding which can be avoid inconvenience oxidation of core material of Cu and/or Cu alloy on ball forming after pulling and cutting away. A covered Cu wire comprising: core material of Cu-P alloy, and intermediate layer of Pd or Pt on the core material and surface layer of Au on the intermediate layer.