Abstract:
As one embodiment, a method of manufacturing a semiconductor device, the method comprising the steps of: (a) preparing a semiconductor chip having an insulating film, and a first main surface in which a plurality of electrodes respectively exposed in a plurality of openings formed in the insulating film are formed; (b) preparing a base material including a second main surface over which the semiconductor chip is mounted, and a plurality of terminals; (c) after the step (a) and the step (b), mounting the semiconductor chip over the second main surface of the base material; (d) after the step (c), electrically connecting the plurality of electrodes and the plurality of terminals via a plurality of wires, respectively; and (e) after the step (d), resin-sealing the semiconductor chip and the plurality of wires, wherein in that , in the step (a), each of the plurality of electrodes of the semiconductor chip includes a first electrode having a first bonding surface exposed in a first opening among the plurality of openings, and in a plan view, each of the plurality of openings of the semiconductor chip has a plurality of sides including a first side extending in a first direction and a second side extending in a second direction intersecting the first direction, and wherein in that the step (d) includes the steps of: (ST2) bringing a ball portion of a first wire among the plurality of wires into contact with the first bonding surface of the first electrode ; (ST3) after the step (ST2), pressing the ball portion of the first wire toward the first bonding surface with a first load; (ST4) after the step (ST3), moving the ball portion of the first wire in a plurality of directions including two directions crossing each other in a plan view while pressing the ball portion against the first electrode with a second load smaller than the first load; (ST5) after the step (ST4), by applying a first ultrasonic wave having a first frequency to the ball portion of the first wire while pressing the ball portion against the first electrode with a third load equal to the second load or smaller than the second load, making the ball portion reciprocate along a third direction in a plan view; and (ST6) after the step (ST5), by applying the first ultrasonic wave having the first frequency while pressing the ball portion of the first wire against the first electrode with a fourth load larger than the third load and smaller than the first load, making the ball portion reciprocate along the third direction in a plan view, thereby bonding the ball portion and the first electrode.
Abstract:
Wire bonding operations can be facilitated through the use of metal nanoparticle compositions. Both ball bonding and wedge bonding processes can be enhanced in this respect. Wire bonding methods can include providing a wire payout at a first location from a rolled wire source via a dispensation head, contacting a first metal nanoparticle composition and a first portion of the wire payout with a bonding pad, and at least partially fusing metal nanoparticles in the first metal nanoparticle composition together to form an adhering interface between the bonding pad and the first portion of the wire payout. The adhering interface can have a nanoparticulate morphology. Wire bonding systems can include a rolled wire source, a dispensation head configured to provide a wire payout, and an applicator configured to place a metal nanoparticle composition upon at least a portion of the wire payout or upon a bonding pad.
Abstract:
A method for making an interposer includes forming a plurality of wire bonds bonded to one or more first surfaces of a first element. A dielectric encapsulation is formed contacting an edge surface of the wire bonds which separates adjacent wire bonds from one another. Further processing comprises removing at least portions of the first element, wherein the interposer has first and second opposite sides separated from one another by at least the encapsulation, and the interposer having first contacts and second contacts at the first and second opposite sides, respectively, for electrical connection with first and second components, respectively, the first contacts being electrically connected with the second contacts through the wire bonds.
Abstract:
A method for making a microelectronic unit includes forming a plurality of wire bonds on a first surface in the form of a conductive bonding surface of a structure comprising a patternable metallic element. The wire bonds are formed having bases joined to the first surface and end surfaces remote from the first surface. The wire bonds have edge surfaces extending between the bases and the end surfaces. The method also includes forming a dielectric encapsulation layer over a portion of the first surface of the conductive layer and over portions of the wire bonds such that unencapsulated portions of the wire bonds are defined by end surfaces or portions of the edge surfaces that are uncovered by the encapsulation layer. The metallic element is patterned to form first conductive elements beneath the wire bonds and insulated from one another by portions of the encapsulation layer.
Abstract:
A bonding wire is provided containing a wire core made of a first material containing a metal and a wire jacket that envelopes the wire core and is made of a second material containing a metal. The wire core and the wire jacket are made of different metals and the bonding wire has an aspect ratio of no more than 0.8. The bonding wire efficiently prevents damage to bonding surfaces during the bonding process and short-circuiting during the use of corresponding sub-assemblies.
Abstract:
It is an object of the present invention to provide a copper-based bonding wire whose material cost is low, having excellent ball bondability, reliability in a heat cycle test or reflow test, and storage life, enabling an application to thinning of a wire used for fine pitch connection. The bonding wire includes a core material having copper as a main component and an outer layer which is provided on the core material and contains a metal M and copper, in which the metal M differs from the core material in one or both of components and composition. The outer layer is 0.021 to 0.12 µ m in thickness.
Abstract:
A bonding wire having a core mainly consisting of copper and a coating layer formed on the core, wherein the coating layer is made of an oxidation-resistant metal having a melting point higher than that of copper, and the elongation of this bonding wire per unit sectional area is 0.021%/µm 2 or more; and a bonding wire having a core mainly consisting of copper and a coating layer formed on the core, wherein the coating layer is made of a metal having oxidation resistance higher than that of copper, and the relationship of 0.007 ≦ X ≦ 0.05 is satisfied wherein an area ratio X is (the area of the coating layer/the area of the core at the section of wire being cut vertically) are provided. The bonding wires thus provided are inexpensive and excellent in ball formation characteristic and bonding characteristic. Further, a ball bonding method characterized in using the above bonding wire is also provided.
Abstract translation:具有主要由铜构成的芯和形成在芯上的涂层的接合线,其中,所述涂层由熔点高于铜的耐氧化金属制成,并且每单位的该接合线的伸长率 截面积为0.021%/ m 2以上; 以及具有主要由铜构成的芯和在芯上形成的涂层的接合线,其中,所述涂层由耐氧化性高于铜的金属制成,并且0.007≤X= 0.05,其中面积比X是(涂层的面积/芯线截面垂直截面处的芯的面积)。 由此提供的接合线便宜并且球形成特性和接合特性优异。 此外,还提供了使用上述接合线的球接合方法。
Abstract:
A copper plated aluminum wire improved in the adhesion is fabricated by a method which comprises a zinc displacement step of forming a zinc thin layer by zinc displacement on the surface of an aluminum or aluminum alloy conductor, an electroplating step of coating the surface of the zinc thin layer continuously with copper layers by electroplating to have a copper coated aluminum conductor, and a thermal diffusion step of heat treating the copper coated aluminum conductor at a temperature of 120 °C to 600 °C under an inert gas atmosphere for thermal diffusion to ease the electrodeposition stress. Accordingly, the resultant copper plated aluminum wire can easily be shaped by cold plastic working process, decreased in the diameter at higher efficiency, and improved in the power of adhesion. A plated aluminum wire is provided comprising an anchor metal layer by displacement plating, a low thermally conductive metal layer by electroplating, and a high electrically conductive metal layer by electroplating which all are deposited in a sequence on the outer surface an aluminum or aluminum alloy conductor. Accordingly, the resultant plated aluminum wire or insulating plated aluminum wire can be minimized in the overall weight and prevented from disconnection caused by thermal diffusion. A plated aluminum wire is provided comprising an anchor metal layer by displacement plating and a high electrically conductive metal layer by electroplating which both are deposited in a sequence on the outer surface an aluminum or aluminum alloy conductor. Accordingly, the resultant plated aluminum wire or insulating plated aluminum wire can be minimized in the overall weight. A composite light-weighted plated wire is provided having an electrically conductive metal layer, which has a potential equal to or higher than that of zinc, deposited by electroplating on the outer surface of a zinc anchor metal layer provided on an aluminum conductor, said electroplating carried out under a condition that the concentration of hydrogen ion in an electrolyte solution is higher than 4 (pH) as an electrolysis parameter and the thickness of plating x (micrometer) is 0.2 Accordingly, the resultant composite light-weighted plated wire can be improved in the adhesion between the aluminum conductor and the electrically conductive metal layer, easily shaped by plastic forming process, decreased in the diameter at higher efficiency, and improved in the reliability of soldering work.
Abstract:
Composite wires characterized by a noble metal annulus welded to a wire core comprising an electrically-conductive, non-noble metal. Methods of forming the composite wire and semiconductor packaging having at least one lead bonded to the composite wire are also disclosed.
Abstract:
There is provided a bonding wire for a semiconductor device including a coating layer having Pd as a main component on a surface of a Cu alloy core material and a skin alloy layer containing Au and Pd on a surface of the coating layer, the bonding wire further improving 2nd bondability on a Pd-plated lead frame and achieving excellent ball bondability even in a high-humidity heating condition. The bonding wire for a semiconductor device including the coating layer having Pd as a main component on the surface of the Cu alloy core material and the skin alloy layer containing Au and Pd on the surface of the coating layer has a Cu concentration of 1 to 10 at% at an outermost surface thereof and has the core material containing a metallic element of Group 10 of the Periodic Table of Elements in a total amount of 0.1 to 3.0% by mass, thereby achieving improvement in the 2nd bondability and excellent ball bondability in the high-humidity heating condition. Furthermore, a maximum concentration of Au in the skin alloy layer is preferably 15 at% to 75 at%.