摘要:
A semiconductor device has a base material (BS) comprised of insulating material having a through hole (SH), a terminal (TE) formed on a lower surface of the base material (BS), and a semiconductor chip mounted on an upper surface of the base material in a face-up manner. Further, the semiconductor device has a conductive member (BW) such as a wire, which electrically connects a pad of the semiconductor chip with an exposed surface of the terminal which is exposed from the through hole (SH) of the base material (BS), and has a sealing body (MR) for sealing the conductive member (BW), inside of the through hole (SH) of the base material (BS), and the semiconductor chip. An anchor (SB) means is provided in a region of the exposed surface (EX(TEa)) of the terminal (TE) which is exposed from the through hole (SH) of the base material (BS) except for a joint portion (BL) joined with the conductive member (BW) such as the wire. In this way the adhesiveness between the exposed surface (EX(TEa) of the terminal (TE) is increased so that the reliability of the semiconductor device may be improved.
摘要:
It is an object of the present invention to provide a copper-based bonding wire whose material cost is low, having excellent ball bondability, reliability in a heat cycle test or reflow test, and storage life, enabling an application to thinning of a wire used for fine pitch connection. The bonding wire includes a core material having copper as a main component and an outer layer which is provided on the core material and contains a metal M and copper, in which the metal M differs from the core material in one or both of components and composition. The outer layer is 0.021 to 0.12 µ m in thickness.
摘要:
[Issues to be solved] To provide Au alloy wire for ball bonding, which is superior wire strength, and also is superior at formability of molten ball and roundness of compressed ball, moreover is superior at stitch bondability; is available for high density wiring of semiconductor divices. [Solution means] Au alloy wire for ball bonding comprising: 15 - 50 wt ppm Mg, 10 - 30 wt ppm Ca, 5 - 20 wt ppm Eu, 5 - 20 wt ppm Y, 5 - 20 wt ppm La and residual Au is more than 99.998 wt % purity, moreover, purity of more than 99.98 wt % Au, mass of additive Ca is less than the value of total amount of additive Eu and additive La, and mass of additive Y is less than the value of total amount of additive Ca and additive Eu, and mass of 20 - 40 wt ppm Mg.
摘要:
It is an object of the present invention to provide a copper-based bonding wire whose material cost is low, having excellent ball bondability, reliability in a heat cycle test or reflow test, and storage life, enabling an application to thinning of a wire used for fine pitch connection. The bonding wire includes a core material having copper as a main component and an outer layer which is provided on the core material and contains a metal M and copper, in which the metal M differs from the core material in one or both of components and composition.. The outer layer is 0.021 to 0.12µm in thickness.
摘要:
A method and apparatus are provided for reliably heating the bonding areas of a substrate and/or a die or dies of a stacked die assembly or a flip-chip assembly to ensure high-quality solder or wire bonds between the substrate and the die. Embodiments include heating the wire bonding areas of the dies of a stacked die package with infrared radiation with an infrared lamp or gun directed towards the top surfaces of the dies before and during the wire bonding process, or heating the bonding pad area of the top surface of a substrate to which a flip-chip is to be mounted from above with infrared radiation from a lamp or gun to the desired temperature, then bonding the flip-chip to the substrate. The use of infrared radiant heating directed at the top surfaces of the dies and/or the substrate ensures that their respective bonding areas are heated to the proper temperature within the necessary time period, thereby enabling high-quality wire bonding or die bonding, and increasing yield.
摘要:
A semiconductor device has a base material (BS) comprised of insulating material having a through hole (SH), a terminal (TE) formed on a lower surface of the base material (BS), and a semiconductor chip mounted on an upper surface of the base material in a face-up manner. Further, the semiconductor device has a conductive member (BW) such as a wire, which electrically connects a pad of the semiconductor chip with an exposed surface of the terminal which is exposed from the through hole (SH) of the base material (BS), and has a sealing body (MR) for sealing the conductive member (BW), inside of the through hole (SH) of the base material (BS), and the semiconductor chip. An anchor (SB) means is provided in a region of the exposed surface (EX(TEa)) of the terminal (TE) which is exposed from the through hole (SH) of the base material (BS) except for a joint portion (BL) joined with the conductive member (BW) such as the wire. In this way the adhesiveness between the exposed surface (EX(TEa) of the terminal (TE) is increased so that the reliability of the semiconductor device may be improved.
摘要:
[Issues to be solved] To provide Au alloy wire for ball bonding, which is superior wire strength, and also is superior at formability of molten ball and roundness of compressed ball, moreover is superior at stitch bondability; is available for high density wiring of semiconductor divices. [Solution means] Au alloy wire for ball bonding comprising: 15 - 50 wt ppm Mg, 10 - 30 wt ppm Ca, 5 - 20 wt ppm Eu, 5 - 20 wt ppm Y, 5 - 20 wt ppm La and residual Au is more than 99.998 wt % purity, moreover, purity of more than 99.98 wt % Au, mass of additive Ca is less than the value of total amount of additive Eu and additive La, and mass of additive Y is less than the value of total amount of additive Ca and additive Eu, and mass of 20 - 40 wt ppm Mg.
摘要:
It is an object of the present invention to provide a copper-based bonding wire whose material cost is low, having excellent ball bondability, reliability in a heat cycle test or reflow test, and storage life, enabling an application to thinning of a wire used for fine pitch connection. The bonding wire includes a core material having copper as a main component and an outer layer which is provided on the core material and contains a metal M and copper, in which the metal M differs from the core material in one or both of components and composition.. The outer layer is 0.021 to 0.12µm in thickness.