公开(公告)号：EP0933802A4

公开(公告)日：1999-10-27

申请号：EP97911513

申请日：1997-11-11

申请人： TOKYO ELECTRON LTD

发明人： AKAHORI TAKASHI ,  ISHIZUKA SHUICHI ,  ENDO SHUNICHI ,  AOKI TAKESHI ,  HIRATA TADASHI

IPC分类号： H01L21/302 ,  H01L21/3065 ,  H01L21/31 ,  H01L21/311 ,  H01L21/314 ,  H01L21/768 ,  H01L23/522 ,  H01L23/532

CPC分类号： H01L21/31144 ,  H01L21/31138 ,  H01L21/76802 ,  H01L23/5226 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/00

摘要： A process for the production of a semiconductor device, which enables the practical use of a carbon fluoride film (hereinafter referred to as "CF film") as the interlayer insulator film. The deposition of a conductive film such as a TiN film (41) on a CF film (4) and the patternwise deposition of a resist film (42) on the film (41) are conducted successively, followed by the etching of the TiN film (41) with BCl3 gas or the like. Although the subsequent irradiation of the resulting wafer with O2 plasma makes not only the CF film but also the resist film (42) etched chemically, predetermined holes can be formed by virtue of the action of the TiN film (41) as a mask. Then, wiring is formed of aluminum or the like on the surface of the CF film (4). The TiN film (41) is effective in making the wiring and the CF film (4) adhere tightly to each other and serves as a part of the wiring. An insulator film made of SiO2 or the like may be used as the mask instead of the conductive film.

摘要翻译： 本发明的目的是提供一种可以将含氟碳膜的层间绝缘膜实际应用的含氟碳膜（CF膜）的方法。 在CF膜4上形成导电膜例如TiN膜41.在其上形成抗蚀剂膜42的图案之后，用例如BCl 3气体蚀刻TiN膜41。 此后，当用O 2等离子体照射晶片的表面时，对CF膜进行化学蚀刻，并且还蚀刻抗蚀剂膜42。 然而，由于TiN膜41用作掩模，因此可以形成预定的孔。 尽管在CF膜4的表面上形成了铝等的互连层，但是TiN膜41用作将互连层粘附到CF膜4上并用作互连层的一部分的粘附层。 作为掩模，可以用SiO 2等的绝缘膜代替导电膜。

公开(公告)号：EP1122769A4

公开(公告)日：2004-10-13

申请号：EP99970209

申请日：1999-10-05

申请人： TOKYO ELECTRON LTD

发明人： ENDO SHUNICHI

IPC分类号： H01L21/768 ,  H01L21/04 ,  H01L21/31 ,  H01L21/312 ,  H01L21/314 ,  H01L21/316 ,  H01L23/522 ,  H01L23/532

CPC分类号： H01L21/3127 ,  H01L21/0212 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/022 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/0445 ,  H01L21/3146 ,  H01L21/31612 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： In a semiconductor device, a contact layer is provided between a silicon-containing insulating film SiO2, etc. or a metal wiring layer, and a fluorine-containing carbon CF film to increase their adhesion. For this purpose, SiC film deposition gases, such as SiH4 gas and C2H4 gas, are excited into plasma to stack a SiC film 200 as the contact layer on the top surface of a SiO2 film 110. After that, switching of deposition gases is conducted for about 1 second by introducing SiH4 gas, C2H4 gas, C4F8 gas and C2H4 gas. Subsequently, CF film deposition gases, such as C4F8 gas and C2H4 gas, for example, are excited into plasma to deposite a CF film 120 on the SiC film 200. In this way, both the SiC film deposition gases and the CF film deposition gases exist simultaneously during the deposition gas switching step, whereby Si-C bonds are produced near the boundary between the SiC film 200 and the CF film 120 across these films, and they enhance adhesion between these films and hence increase adhesion of the SiO2 film 110 and the CF film 120.

公开(公告)号：EP1126511A4

公开(公告)日：2003-05-28

申请号：EP99943359

申请日：1999-09-16

申请人： TOKYO ELECTRON LTD

发明人： ENDO SHUNICHI ,  HIRATA TADASHI

IPC分类号： H01L21/31 ,  C23C16/26 ,  H01L21/312 ,  H01L21/314 ,  H01L21/768

CPC分类号： H01L21/76837 ,  C23C16/26 ,  H01L21/0212 ,  H01L21/02274 ,  H01L21/3127

摘要： This invention is a method of: making a film-forming gas including a compound gas of carbon and fluorine into plasma in a vacuum container 2 including a stage 4 for an object to be processed 10; and applying a bias electric power to the stage 4 in order to draw ions in the plasma toward the object 10 while forming an insulation film consisting of a film of fluorine-added carbon onto the object 10 by the plasma. At first, a first electric power of the bias electric power is applied to the stage 4 and the compound gas of carbon and fluorine is introduced at a first flow rate to form the film of fluorine-added carbon onto the object 10. Then, a second electric power of the bias electric power smaller than the first electric power is applied to the stage 4 and the compound gas of carbon and fluorine is introduced at a second flow rate smaller than the first flow rate to form the film of fluorine-added carbon onto the object 10. According to the invention, in the case of filling up a concave portion having a high aspect ratio with a film of fluorine-added carbon, the film-forming process can be conducted while generating less voids with a raised throughput.