公开(公告)号：EP1811562A4

公开(公告)日：2008-11-19

申请号：EP05787588

申请日：2005-09-30

申请人： TOKYO ELECTRON LTD ,  UNIV TOHOKU

发明人： KITAGAWA JUNICHI ,  OZAKI SHIGENORI ,  TERAMOTO AKINOBU ,  OHMI TADAHIRO

IPC分类号： H01L21/8247 ,  H01L21/318 ,  H01L27/115 ,  H01L29/51 ,  H01L29/788 ,  H01L29/792

CPC分类号： H01L29/792 ,  H01L21/28202 ,  H01L21/28273 ,  H01L29/513

摘要： [PROBLEMS] To provide a semiconductor storage device having excellent electrical characteristics (writing/erasing characteristics) by excellent nitrogen concentration profile of a gate insulating film and to provide a method for manufacturing such device. [MEANS FOR SOLVING PROBLEMS] In a semiconductor device manufacturing method relating to a first embodiment of this invention, a method for manufacturing a semiconductor storage device which operates by transferring charges through a gate insulating film formed between a semiconductor substrate and a gate electrode includes a process of introducing oxynitriding species previously diluted by using a gas for plasma excitation into a plasma processing apparatus, generating the oxynitriding species by plasma, and forming an oxynitride film on the semiconductor substrate as the gate insulating film. The oxynitriding species contain an NO gas of 0.00001-0.01% to the total gas quantity introduced into the plasma processing apparatus.

摘要翻译： 本发明提供一种通过栅极绝缘膜的优异的氮浓度分布而具有优异的电特性（写入/擦除特性）的半导体存储装置，并提供用于制造该装置的方法。 用于解决问题的手段本发明的第一实施方式涉及的半导体装置的制造方法中，通过在半导体基板与栅电极之间形成的栅极绝缘膜转移电荷而工作的半导体存储装置的制造方法包括： 将通过使用用于等离子体激发的气体预先稀释的氮氧化物种引入到等离子体处理设备中，通过等离子体产生氮氧化物种，以及在作为栅极绝缘膜的半导体基板上形成氧氮化物膜。 对于导入等离子体处理装置的总气体量，氮氧化物质含有0.00001-0.01％的NO气体。

公开(公告)号：EP3050957A4

公开(公告)日：2017-05-31

申请号：EP14848746

申请日：2014-09-19

申请人： TOKYO ELECTRON LTD

发明人： OZAKI SHIGENORI ,  FUJI TOSHIMITSU ,  KINOSHITA YOSHIO ,  TAMURA AKITAKE

IPC分类号： C12M1/00 ,  C12M3/00 ,  C12N1/00

CPC分类号： C12M41/48 ,  C12M23/44 ,  C12M23/50 ,  C12M23/52 ,  C12M37/00 ,  C12M37/04 ,  C12M41/14 ,  C12N5/00 ,  C12N5/0068

摘要： An automatic culture system includes a transfer part configured to transfer a first airtight container which accommodates cells in a sealed state, and an automatic culture device configured to receive the first airtight container transferred by the transfer part, take out the cells from the first airtight container and culture the taken-out cells. The automatic culture device is configured to automatically perform replacement of a culture medium.

摘要翻译： 一种自动培养系统，包括：传送部件，用于传送容纳处于密封状态的细胞的第一气密容器;以及自动培养装置，用于接收由传送部件传送的第一气密容器，从第一气密容器中取出细胞 并培养取出的细胞。 自动培养装置被配置为自动执行培养基的替换。

公开(公告)号：EP3202911A4

公开(公告)日：2018-05-30

申请号：EP15848017

申请日：2015-09-29

申请人： TOKYO ELECTRON LTD

发明人： HATABAYASHI KUNITADA ,  TOMITA KENTARO ,  GOMI SHINICHI ,  KURAKAZU TOMOAKI ,  OSHIMA YASUHIRO ,  KAGAWA KENICHI ,  OZAKI SHIGENORI

IPC分类号： C12Q1/02 ,  C12M1/34 ,  C12M1/36 ,  C12M3/00 ,  C12N5/071 ,  C12N5/0735 ,  C12N5/074 ,  G01N33/50

CPC分类号： C12M41/46 ,  C12M41/36 ,  C12M41/48 ,  C12N5/0606 ,  C12N5/0696 ,  C12Q1/02 ,  G01N33/5073

摘要： There is provided a method for easily determining an undifferentiated state of pluripotent stem cells without relying on the judgment of a skilled technician. The method includes: a step of evaluating an undifferentiated state of pluripotent stem cells based on a time-dependent change in a variation value of an extracellular metabolite contained in a culture medium in which the pluripotent stem cells are cultured, wherein the extracellular metabolite is at least one selected from a group consisting of L-glutamic acid, L-alanine and ammonia.

公开(公告)号：EP3075837A4

公开(公告)日：2016-11-30

申请号：EP14864115

申请日：2014-11-21

申请人： TOKYO ELECTRON LTD

发明人： OZAKI SHIGENORI ,  FUJI TOSHIMITSU ,  KINOSHITA YOSHIO

IPC分类号： C12M1/00 ,  C12M1/12 ,  C12M1/34 ,  C12M1/36 ,  C12M3/00 ,  C12N5/074

CPC分类号： C12M41/48 ,  C12M37/02 ,  C12M41/46 ,  C12N5/0696

摘要： A cell management system is provided with: an automatic culture system disposed in a cell culturing factory and including automatic culture devices that automatically culture cells and a cell management part for managing information on the state of cultured cells; a storage part for storing the state of cells cultured in the automatic culture devices; and an external computer disposed at a side of an ordering party. The automatic culture system sends the information on the state of cells being managed by the cell management part to the storage part in real time. The external computer includes a display part for displaying the information on the state of the cells stored in the storage part and an operating part for ordering the cells within the cell culturing factory. ABSTRACT (as published by WIPO) A cell management system is provided with: an automatic culture system (110) installed in a cell culture factory (100) and provided with an automatic culture device (20, 30) for automatically culturing cells and a cell management part (120) for managing information on a state of the cells being cultured; a memory part (160) for storing information on the state of the cells being cultured by the automatic culture device (20, 30); and an external computer (210) installed in a side of a cell ordering party (200). The automatic culture system (110) sends the information on the state of the cells managed by the cell management part (120) to the memory part (160) in real time. The external computer (210) includes a display part (211) for displaying the information on the state of the cells stored in the memory part (160) thereon and an manipulation part (212) for ordering the cells under culture within the cell culture factory (100).

公开(公告)号：EP1691403A4

公开(公告)日：2009-04-15

申请号：EP04819950

申请日：2004-12-03

申请人： TOKYO ELECTRON LTD

发明人： SASAKI MASARU ,  IDE SHINJI ,  OZAKI SHIGENORI

IPC分类号： H01L21/02 ,  H01L21/306 ,  H01L21/311 ,  H01L21/768

CPC分类号： H01L21/02063 ,  H01J2237/335 ,  H01L21/02068 ,  H01L21/76814 ,  H01L21/76838

摘要： A method of cleaning semiconductor substrate conductive layer surface which can remove a residual organic material and a natural oxide satisfactorily and does not adversely affect a k value without damaging the side-wall insulation film of a via hole. A semiconductor device, comprising insulation films (2, 3) formed on the surface of the conductive layer (1) of a semiconductor substrate and a via hole (4) formed in the insulation film (3) to partly expose the conductive layer (1), is carried into a reaction vessel, plasma including hydrogen is generated in the reaction vessel to clean the surface of the conductive layer (1) at the bottom of the via hole (4), a residual organic material (6) is decomposed and removed by ashing, and a copper oxide film (7) on the surface of the conductive layer (1) is reduced to Cu.

公开(公告)号：EP3109312A4

公开(公告)日：2017-10-04

申请号：EP15752598

申请日：2015-02-16

申请人： TOKYO ELECTRON LTD

发明人： KURAKAZU TOMOAKI ,  OSHIMA YASUHIRO ,  KIMURA YOSHIO ,  KAGAWA KENICHI ,  GOMI SHINICHI ,  OZAKI SHIGENORI

IPC分类号： C12M1/00 ,  C12M1/12 ,  C12M3/00

CPC分类号： C12M23/12 ,  C12M23/04 ,  C12M23/20 ,  C12M23/24 ,  C12M25/00 ,  C12M25/06 ,  C12M29/10

摘要： A cell culture container characterized by being equipped with a container main body and a flat plate attached onto one surface of the container main body, wherein the container main body is equipped with an inflow port through which a liquid can flow into the container main body, a passage through which the liquid flowing into the container main body from the inflow port can pass, and an outflow port through which the liquid passing through the passage can flow out from the container main body, and wherein, on the bottom surface of the passage, multiple cell-seeding areas in which cells passing through the passage can be seeded are arranged side by side along the passage.

摘要翻译： 1。一种细胞培养容器，其特征在于，具备容器主体和安装在该容器主体的一个面上的平板，所述容器主体具备能够使液体流入容器主体的流入口， 从流入口流入到容器主体内的液体能够通过的流路以及流过流路的液体能够从容器主体流出的流出口，在流路的底面 通过通道的细胞可以接种的多个细胞播种区域沿着通道并排布置。

公开(公告)号：EP3070159A4

公开(公告)日：2016-11-23

申请号：EP14861280

申请日：2014-07-11

申请人： TOKYO ELECTRON LTD ,  KAJIMA CORP

发明人： FUJI TOSHIMITSU ,  OZAKI SHIGENORI ,  KINOSHITA YOSHIO ,  FUJINAGA HAJIME ,  SHIINA RYOJI ,  NISHIDA ATSUSHI

IPC分类号： C12M3/00 ,  C12M1/00 ,  C12M1/12 ,  C12N5/0735 ,  C12N5/10

CPC分类号： C12M23/58 ,  C12M21/08 ,  C12M37/00 ,  C12M41/46 ,  C12N5/0607

摘要： In order to culture the pluripotent stem cell which can be variously differentiated, while preventing the cross contamination between the different cells and securing the safety of the products; extending a main transport path 31 outwardly from a stem cell conditioning area 20, the stem cell conditioning area 20 including a treatment room 21 for inducing pluripotent stem cell from a somatic cell or an egg cell, or a treatment room 21 for receiving and conditioning pluripotent stem cell induced in other facilities; branching at least one branched transport path 32 from the main transport path 31; and arranging along each branched transport path 32, a cell culture area 40 including culture rooms 41 to 44 for culturing the stem cell and an analysis room 45 for analyzing the cultured cell, respectively. Preferably, the stem cell conditioning area 20, the cell culture area 40 and a transport area 30 including the main transport path 31 and the branched transport path 32 are provided with respective operator gates 22, (47 + 48), 33 individually, so as to prohibit coming and going of operator among the areas 20, 40, 30.

公开(公告)号：EP2949746A4

公开(公告)日：2016-07-27

申请号：EP14743585

申请日：2014-01-23

申请人： TOKYO ELECTRON LTD

发明人： OZAKI SHIGENORI ,  GOMI SHINICHI ,  KURAKAZU TOMOAKI ,  OSHIMA YASUHIRO ,  KAWAMATA SHIN ,  NISHISHITA NAOKI

IPC分类号： C12N5/07 ,  C12M1/18 ,  C12M1/32 ,  C12N5/00 ,  C12N5/071 ,  C12N5/0735 ,  C12N5/074

CPC分类号： C12N5/0607 ,  C12M23/12 ,  C12N5/0081 ,  C12N5/0606 ,  C12N5/0696

公开(公告)号：EP1492161A4

公开(公告)日：2006-05-24

申请号：EP03715674

申请日：2003-03-31

申请人： TOKYO ELECTRON LTD

发明人： SUGAWARA TAKUYA ,  TADA YOSHIHIDE ,  NAKAMURA GENJI ,  OZAKI SHIGENORI ,  NAKANISHI TOSHIO ,  SASAKI MASARU ,  MATSUYAMA SEIJI ,  HASEBE KAZUHIDE ,  NAKAJIMA SHIGERU ,  FUJIWARA TOMONORI

IPC分类号： H01L21/02 ,  H01L21/28 ,  H01L21/316 ,  H01L29/51

CPC分类号： H01L21/28185 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/31604 ,  H01L21/31645 ,  H01L21/31662 ,  H01L28/56 ,  H01L29/517 ,  H01L29/518

摘要： A method for forming an underlying film at the interface between an insulation film and a basic material for electronic device by irradiating the surface of the insulation film formed on the basic material for electronic device with plasma based on a processing gas containing at least oxygen atoms. A high-quality underlying film can be obtained at the interface between the insulation film and the basic material for electronic device in order to enhance the characteristics of the insulation film.

公开(公告)号：EP1361605A4

公开(公告)日：2006-02-15

申请号：EP02715873

申请日：2002-01-22

申请人： TOKYO ELECTRON LTD

发明人： SUGAWARA TAKUYA ,  NAKANISHI TOSHIO ,  OZAKI SHIGENORI ,  MATSUYAMA SEIJI ,  MURAKAWA SHIGEMI ,  TADA YOSHIHIDE

IPC分类号： C23C8/02 ,  C23C8/34 ,  C23C8/36 ,  C23C16/44 ,  C23C16/455 ,  H01L21/314 ,  H01L21/316

CPC分类号： C23C16/45565 ,  C23C8/02 ,  C23C8/34 ,  C23C8/36 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/02238 ,  H01L21/02332 ,  H01L21/0234 ,  H01L21/2807 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/3144 ,  H01L21/31662 ,  H01L21/32055

摘要： Method for fabricating the structure of an electronic device (e.g. a high-performance MOS semiconductor device) having good electric characteristics in which an SiO2 film and an SiON film are employed as an insulation film having an extremely small thickness (e.g. 2.5 nm or less) and polysilicon, amorphous silicon or SiGe is employed for an electrode. Under existence of a processing gas containing oxygen and a rare gas, a wafer W principally comprising Si is irradiated with microwave through a planar antenna member SPA to form a plasma containing oxygen and a rare gas (or a plasma containing nitrogen and a rare gas or a plasma containing nitrogen, a rare gas and hydrogen). An oxide film (or an oxide nitride film) is formed on the wafer surface using that plasma and an electrode of polysilicon, amorphous silicon or SiGe is formed, as required, thus forming the structure of an electronic device.