公开(公告)号：EP2801113A2

公开(公告)日：2014-11-12

申请号：EP13701815.6

申请日：2013-01-03

申请人： TOTAL MARKETING SERVICES ,  Centre National de la Recherche Scientifique (CNRS) ,  Ecole Polytechnique

发明人： YU, Linwei ,  ROCA I CABARROCAS, Pere

IPC分类号： H01L29/06 ,  H01L21/365 ,  H01L31/0352 ,  H01L31/042 ,  H01L31/075 ,  B82Y30/00 ,  B82Y40/00 ,  H01L29/16 ,  H01L29/161 ,  H01L29/24 ,  C30B9/10 ,  C30B29/06 ,  C30B29/52 ,  C30B29/60 ,  H01L29/786 ,  C30B29/08 ,  H01L21/02

CPC分类号： H01L31/182 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  H01L21/02422 ,  H01L21/02472 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02603 ,  H01L21/0262 ,  H01L21/02645 ,  H01L21/02653 ,  H01L29/0665 ,  H01L29/0676 ,  H01L29/068 ,  H01L29/16 ,  H01L29/161 ,  H01L29/167 ,  H01L29/24 ,  H01L31/035227 ,  H01L31/035272 ,  H01L31/035281 ,  H01L31/075 ,  H01L31/077 ,  H01L31/18 ,  H01L31/1804 ,  Y02E10/547 ,  Y02E10/548 ,  Y02P70/521

摘要： The present invention relates to a method for the low-temperature production of radial electronic junction semiconductor nanostructures on a substrate (2), including the steps of: a) forming metal aggregates (2) on said substrate (2), said metal aggregates being capable of electronically doping a first semiconductor material; b) growing, in the vapor phase, doped semiconductor nanowires (1) in the presence of one or more non-dopant precursor gases of said first semiconductor material, the substrate (2) being heated to a temperature at which said metal aggregates are in the liquid phase, the growth of the doped semiconductor nanowires (1) in the vapor phase being catalyzed by said metal aggregates (3); c) rendering the residual metal aggregates (3) inactive; and d) the chemical vapor deposition, in the presence of one or more precursor gases and a dopant gas, of at least one thin film of a second semiconductor material so as to form at least one radial electronic junction nanostructure between said nanowire and said at least one doped thin film. The invention also relates to a solar cell including a plurality of radial electronic junction nanostructures produced according to the invention.

公开(公告)号：EP2801113B1

公开(公告)日：2016-03-30

申请号：EP13701815.6

申请日：2013-01-03

申请人： TOTAL MARKETING SERVICES ,  Centre National de la Recherche Scientifique (CNRS) ,  Ecole Polytechnique

发明人： YU, Linwei ,  ROCA I CABARROCAS, Pere

IPC分类号： H01L29/786 ,  H01L21/02 ,  C30B29/08 ,  H01L31/18 ,  H01L31/077 ,  H01L31/075 ,  H01L31/0352 ,  H01L29/24 ,  H01L29/161 ,  H01L29/16 ,  H01L29/06

CPC分类号： H01L31/182 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  H01L21/02422 ,  H01L21/02472 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02603 ,  H01L21/0262 ,  H01L21/02645 ,  H01L21/02653 ,  H01L29/0665 ,  H01L29/0676 ,  H01L29/068 ,  H01L29/16 ,  H01L29/161 ,  H01L29/167 ,  H01L29/24 ,  H01L31/035227 ,  H01L31/035272 ,  H01L31/035281 ,  H01L31/075 ,  H01L31/077 ,  H01L31/18 ,  H01L31/1804 ,  Y02E10/547 ,  Y02E10/548 ,  Y02P70/521

公开(公告)号：EP2334848A1

公开(公告)日：2011-06-22

申请号：EP09756003.1

申请日：2009-10-09

申请人： Ecole Polytechnique ,  Centre National de la Recherche Scientifique

发明人： ROCA I CABARROCAS, Pere ,  YU, Linwei

IPC分类号： C30B11/12 ,  C30B29/06 ,  C30B29/60 ,  C30B29/08 ,  H01L29/06 ,  H01L29/786

CPC分类号： H01L21/02653 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  C30B9/10 ,  C30B29/06 ,  C30B29/08 ,  C30B29/52 ,  C30B29/605 ,  H01L21/02403 ,  H01L21/02414 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02603 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02645 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/16 ,  H01L29/161 ,  H01L29/24 ,  H01L29/6675 ,  H01L29/66772 ,  H01L29/7854 ,  H01L29/78603 ,  H01L29/78696 ,  H01L51/0048

摘要： The invention relates to a method for making semiconductor nanowires (5) on a substrate (1) including a metal oxide layer (2), said method including the following steps: (a) exposing the metal oxide layer (2) to a hydrogen plasma (11) capable of triggering a reduction of the layer (2) and of generating metal nanodrops (3) having a radius (Rm) at the surface of the metal oxide layer (2); (b) plasma-depositing a thin layer (4) of a semiconductor material on the metal oxide layer (2), said thin layer (4) having a thickness (H3) suitable for covering the metal nanodrops (3); (c) and thermal annealing at a temperature T sufficient for activating a side growth of nanowires (5) by catalysis of the material deposited as a thin layer (4) from the metal nanodrops (3). The invention also relates to the nanowires (5) obtained by the method of the invention, and to nanometric transistors including a semiconductor nanowire (5), e.g. a silicon nanowire (SiNW) for forming a semiconductor link between the source (16), the drain (17), and the gate (18).

公开(公告)号：EP2334848B1

公开(公告)日：2012-12-26

申请号：EP09756003.1

申请日：2009-10-09

申请人： Ecole Polytechnique ,  Centre National de la Recherche Scientifique

发明人： ROCA I CABARROCAS, Pere ,  YU, Linwei

IPC分类号： C30B11/12 ,  C30B29/06 ,  C30B29/60 ,  C30B29/08 ,  H01L29/06 ,  H01L29/786

CPC分类号： H01L21/02653 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  C30B9/10 ,  C30B29/06 ,  C30B29/08 ,  C30B29/52 ,  C30B29/605 ,  H01L21/02403 ,  H01L21/02414 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02603 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02645 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/16 ,  H01L29/161 ,  H01L29/24 ,  H01L29/6675 ,  H01L29/66772 ,  H01L29/7854 ,  H01L29/78603 ,  H01L29/78696 ,  H01L51/0048