公开(公告)号：EP2801113B1

公开(公告)日：2016-03-30

申请号：EP13701815.6

申请日：2013-01-03

申请人： TOTAL MARKETING SERVICES ,  Centre National de la Recherche Scientifique (CNRS) ,  Ecole Polytechnique

发明人： YU, Linwei ,  ROCA I CABARROCAS, Pere

IPC分类号： H01L29/786 ,  H01L21/02 ,  C30B29/08 ,  H01L31/18 ,  H01L31/077 ,  H01L31/075 ,  H01L31/0352 ,  H01L29/24 ,  H01L29/161 ,  H01L29/16 ,  H01L29/06

CPC分类号： H01L31/182 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  H01L21/02422 ,  H01L21/02472 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02603 ,  H01L21/0262 ,  H01L21/02645 ,  H01L21/02653 ,  H01L29/0665 ,  H01L29/0676 ,  H01L29/068 ,  H01L29/16 ,  H01L29/161 ,  H01L29/167 ,  H01L29/24 ,  H01L31/035227 ,  H01L31/035272 ,  H01L31/035281 ,  H01L31/075 ,  H01L31/077 ,  H01L31/18 ,  H01L31/1804 ,  Y02E10/547 ,  Y02E10/548 ,  Y02P70/521

公开(公告)号：EP2801113A2

公开(公告)日：2014-11-12

申请号：EP13701815.6

申请日：2013-01-03

申请人： TOTAL MARKETING SERVICES ,  Centre National de la Recherche Scientifique (CNRS) ,  Ecole Polytechnique

发明人： YU, Linwei ,  ROCA I CABARROCAS, Pere

IPC分类号： H01L29/06 ,  H01L21/365 ,  H01L31/0352 ,  H01L31/042 ,  H01L31/075 ,  B82Y30/00 ,  B82Y40/00 ,  H01L29/16 ,  H01L29/161 ,  H01L29/24 ,  C30B9/10 ,  C30B29/06 ,  C30B29/52 ,  C30B29/60 ,  H01L29/786 ,  C30B29/08 ,  H01L21/02

CPC分类号： H01L31/182 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  H01L21/02422 ,  H01L21/02472 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02603 ,  H01L21/0262 ,  H01L21/02645 ,  H01L21/02653 ,  H01L29/0665 ,  H01L29/0676 ,  H01L29/068 ,  H01L29/16 ,  H01L29/161 ,  H01L29/167 ,  H01L29/24 ,  H01L31/035227 ,  H01L31/035272 ,  H01L31/035281 ,  H01L31/075 ,  H01L31/077 ,  H01L31/18 ,  H01L31/1804 ,  Y02E10/547 ,  Y02E10/548 ,  Y02P70/521

摘要： The present invention relates to a method for the low-temperature production of radial electronic junction semiconductor nanostructures on a substrate (2), including the steps of: a) forming metal aggregates (2) on said substrate (2), said metal aggregates being capable of electronically doping a first semiconductor material; b) growing, in the vapor phase, doped semiconductor nanowires (1) in the presence of one or more non-dopant precursor gases of said first semiconductor material, the substrate (2) being heated to a temperature at which said metal aggregates are in the liquid phase, the growth of the doped semiconductor nanowires (1) in the vapor phase being catalyzed by said metal aggregates (3); c) rendering the residual metal aggregates (3) inactive; and d) the chemical vapor deposition, in the presence of one or more precursor gases and a dopant gas, of at least one thin film of a second semiconductor material so as to form at least one radial electronic junction nanostructure between said nanowire and said at least one doped thin film. The invention also relates to a solar cell including a plurality of radial electronic junction nanostructures produced according to the invention.

公开(公告)号：EP1604406A1

公开(公告)日：2005-12-14

申请号：EP04708761.4

申请日：2004-02-06

申请人： CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE (CNRS) ,  ECOLE POLYTECHNIQUE

发明人： ROCA I CABARROCAS, Pere ,  VANDERHAGHEN, Régis ,  DREVILLON, Bernard

IPC分类号： H01L29/786 ,  H01L21/336

CPC分类号： H01L29/66765 ,  H01L29/78603 ,  H01L29/78678

摘要： The invention concerns a transistor for active matrix display and a method for producing the said transistor (1). The transistor (1) comprises a microcrystalline silicon film (5) and an insulator (3). The crystalline fraction of the said microcrystalline silicon film (5) is above 80%. According to the invention, the transistor (1) comprises a plasma treated interface (4) located between the insulator (3) and the microcrystalline silicon film (5) so that the said transistor (1) has a linear mobility equal or superior to 1.5 cm2V-1s-1, shows threshold voltage stability and wherein the microcrystalline silicon film (5) comprises grains (6) whose size ranges between 10 nm and 400 nm. The invention concerns as well a display unit having a line-column matrix of pixels that are actively addressed, each pixel comprising at least a transistor as described above.

公开(公告)号：EP2126980A2

公开(公告)日：2009-12-02

申请号：EP07857992.7

申请日：2007-12-20

申请人： Centre National de la Recherche Scientifique (CNRS) Etablissement Public à Caractère Scientifique et Technologique ,  Ecole Polytechnique

发明人： ROCA I CABARROCAS, Pere ,  DAMON-LACOSTE, Jérôme

IPC分类号： H01L31/072 ,  H01L31/075 ,  H01L31/18

CPC分类号： H01L31/077 ,  H01L31/0745 ,  Y02E10/50

摘要： The invention relates to a structure (100) for photovoltaic applications including: a first layer (10) of a crystalline semiconductor material having a front face (1) for receiving and/or emitting photons and a back face (2); a back contact (40) of a conductive material provided on the side pf the back face (2); characterised in that it further comprises a second layer (50) of hydrogenated amorphous silicon-germanium (a-SiGe:H) between the back face (2) of the first layer (10) and the back contact (40). The invention also relates to a method for realising said structure (100).

公开(公告)号：EP3136419A1

公开(公告)日：2017-03-01

申请号：EP15306338.3

申请日：2015-08-31

申请人： TOTAL MARKETING SERVICES ,  École Polytechnique ,  Centre National de la Recherche Scientifique

发明人： JOHNSON, Erik ,  BRUNEAU, Bastien ,  ROCA I CABARROCAS, Pere ,  BULKIN, Pavel

IPC分类号： H01J37/32 ,  H01L31/18 ,  C23C14/04 ,  C23C16/509

CPC分类号： H01J37/32091 ,  C23C16/04 ,  C23C16/45565 ,  C23C16/45574 ,  C23C16/505 ,  H01J37/32366 ,  H01J37/32541 ,  H01J37/32568 ,  H01J37/32816 ,  H01L31/03921 ,  H01L31/202 ,  Y02E10/50

摘要： The invention concerns a plasma generating apparatus, for manufacturing devices having patterned layers, comprising a first electrode assembly (1) and a second electrode assembly (2) placed in a plasma reactor chamber, an electrical power supply (6) for generating a voltage difference between the first electrode assembly (1) and the second electrode assembly (2).
According to the invention, the second electrode assembly (2) is configured for receiving a substrate (5), and the first electrode assembly (1) comprises a plurality of protrusions (11) and a plurality of recesses (12, 13, 14, 15, 16, 17, 18), the protrusions (11) and recesses (12, 13, 14, 15, 16, 17, 18) being dimensioned and set at respective distances (D1, D2) from the surface (51) of the substrate (5) so as to generate a plurality of spatially isolated plasma zones (21, 22) located selectively either between said surface (51) of the substrate (5) and said plurality of recesses (12, 13, 14, 15, 16, 17, 18) or between said surface (51) of the substrate (5) and said plurality of protrusions (11).

摘要翻译： 本发明涉及一种等离子体生成装置，用于具有图案化的层，其包括第一电极组件的制造设备（1）和第二电极组件（2）在等离子体反应器腔室放置到电电源，用于产生电压差（6） 第一电极组件（1）和第二电极组件（2）之间。 。根据本发明，第二电极组件（2）被配置用于接收基片（5），并且所述第一电极组件（1）包括突出部的多个（11）和凹部（12，13，14的复数， 15，16，17，18），所述突出（11）和凹部（12，13，14，15，16，17，18）的尺寸，并在从表面（51）respectivement距离（D1，D2）设定 基板（5），以便生成位于选择性要么基板（5）和凹部（12，13，14，15的所述多个所述表面（51）之间的空间分离的等离子体区域（21，22）的复数， 16，17，18）或基片的所述表面（51）之间的（5）和凸出的所述多个（11）。

公开(公告)号：EP3345206A1

公开(公告)日：2018-07-11

申请号：EP16758167.7

申请日：2016-08-30

申请人： Total S.A. ,  Ecole Polytechnique ,  Centre National de la Recherche Scientifique

发明人： JOHNSON, Erik ,  BRUNEAU, Bastien ,  ROCA I CABARROCAS, Pere ,  BULKIN, Pavel ,  HABKA, Nada

IPC分类号： H01J37/32 ,  H01L31/18 ,  C23C14/04 ,  C23C16/509

CPC分类号： H01J37/32091 ,  C23C16/04 ,  C23C16/045 ,  C23C16/45565 ,  C23C16/45574 ,  C23C16/505 ,  H01J37/32366 ,  H01J37/32541 ,  H01J37/32568 ,  H01J37/32816 ,  H01L31/03921 ,  H01L31/202 ,  Y02E10/50 ,  Y02P70/521

摘要： The invention concerns a plasma generating apparatus, for manufacturing devices having patterned layers, comprising a first electrode assembly (1) and a second electrode assembly (2) placed in a plasma reactor chamber, an electrical power supply (6) for generating a voltage difference between the first electrode assembly (1) and the second electrode assembly (2). According to the invention, the second electrode assembly (2) is configured for receiving a substrate (5), and the first electrode assembly (1) comprises a plurality of protrusions (11) and a plurality of recesses (12, 13, 14, 15, 16, 17, 18), the protrusions (11) and recesses (12, 13, 14, 15, 16, 17, 18) being dimensioned and set at respective distances (D1, D2) from the surface (51) of the substrate (5) so as to generate a plurality of spatially isolated plasma zones (21, 22) located selectively either between said surface (51) of the substrate (5) and said plurality of recesses (12, 13, 14, 15, 16, 17, 18) or between said surface (51) of the substrate (5) and said plurality of protrusions (11).

公开(公告)号：EP2353184A2

公开(公告)日：2011-08-10

申请号：EP09801494.7

申请日：2009-12-03

申请人： Ecole Polytechnique ,  Centre National de la Recherche Scientifique ,  Total SA

发明人： JOHNSON, Erik, V. ,  ROCA I CABARROCAS, Pere

IPC分类号： H01L31/0224 ,  H01L31/18 ,  H01L31/042 ,  H01L31/0392

CPC分类号： H01L31/022466 ,  H01L31/046 ,  H01L31/1884 ,  Y02E10/50

摘要： The invention relates to a photovoltaic module (1) that includes at least two photovoltaic cells (7, 7’) in series, each rectangular cell (7, 7’) including, respectively, a first rear thin film electrode (5, 5’), a photovoltaic stack having at least two active materials (3) included between the rear electrode (5) and a transparent conductive electrode (TC) made of a thin film (4), said electrode TC (4, 4’) being capable of collecting and transmitting an electric current (10, 10’) generated by the photovoltaic stack (3, 3’), the two photovoltaic cells (7, 7’) being electrically connected in series by an electrical contact strip (6) that is included between the electrode TC (4) of the first cell (7) and the rear electrode (5’) of the second cell (7’). According to the invention, the local thickness (e) of the electrode TC (4) of the cell (7) varies depending on the distance to the electrical contact strip (6). The invention also relates to methods for depositing and etching the transparent conductive film (TC) so as to simultaneously manufacture a plurality of cells (7, 7’, 7”…) for a single module (1).

公开(公告)号：EP2087502B1

公开(公告)日：2011-10-12

申请号：EP07819350.5

申请日：2007-10-26

申请人： Dow Corning Corporation ,  Ecole Polytechnique

发明人： ROCA I CABARROCAS, Pere ,  BULKIN, Pavel ,  DAINEKA, Dmitri ,  LEEMPOEL, Patrick ,  DESCAMPS, Pierre ,  KERVYN DE MEERENDRE, Thibault

IPC分类号： H01J37/32

CPC分类号： H01J37/32678 ,  C23C16/24 ,  C23C16/511 ,  H01J37/32192 ,  H05H1/46

摘要： An apparatus is described for depositing a film on a substrate from a plasma. The apparatus comprises an enclosure, a plurality of plasma generator elements disposed within the enclosure, and means, also within the enclosure, for supporting the substrate. Each plasma generator element comprises a microwave antenna having an end from which microwaves are emitted, a magnet disposed in the region of the said antenna end and defining therewith an electron cyclotron resonance region in which a plasma can be generated, and a gas entry element having an outlet for a film precursor gas or a plasma gas. The outlet is arranged to direct gas towards a film deposition area situated beyond the magnet, as considered from the microwave antenna, the outlet being located in, or above, the hot electron confinement envelope.

公开(公告)号：EP2334848A1

公开(公告)日：2011-06-22

申请号：EP09756003.1

申请日：2009-10-09

申请人： Ecole Polytechnique ,  Centre National de la Recherche Scientifique

发明人： ROCA I CABARROCAS, Pere ,  YU, Linwei

IPC分类号： C30B11/12 ,  C30B29/06 ,  C30B29/60 ,  C30B29/08 ,  H01L29/06 ,  H01L29/786

CPC分类号： H01L21/02653 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  C30B9/10 ,  C30B29/06 ,  C30B29/08 ,  C30B29/52 ,  C30B29/605 ,  H01L21/02403 ,  H01L21/02414 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02603 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02645 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/16 ,  H01L29/161 ,  H01L29/24 ,  H01L29/6675 ,  H01L29/66772 ,  H01L29/7854 ,  H01L29/78603 ,  H01L29/78696 ,  H01L51/0048

摘要： The invention relates to a method for making semiconductor nanowires (5) on a substrate (1) including a metal oxide layer (2), said method including the following steps: (a) exposing the metal oxide layer (2) to a hydrogen plasma (11) capable of triggering a reduction of the layer (2) and of generating metal nanodrops (3) having a radius (Rm) at the surface of the metal oxide layer (2); (b) plasma-depositing a thin layer (4) of a semiconductor material on the metal oxide layer (2), said thin layer (4) having a thickness (H3) suitable for covering the metal nanodrops (3); (c) and thermal annealing at a temperature T sufficient for activating a side growth of nanowires (5) by catalysis of the material deposited as a thin layer (4) from the metal nanodrops (3). The invention also relates to the nanowires (5) obtained by the method of the invention, and to nanometric transistors including a semiconductor nanowire (5), e.g. a silicon nanowire (SiNW) for forming a semiconductor link between the source (16), the drain (17), and the gate (18).

公开(公告)号：EP2080425A1

公开(公告)日：2009-07-22

申请号：EP07819351.3

申请日：2007-10-26

申请人： Dow Corning Corporation ,  Ecole Polytechnique

发明人： ROCA I CABARROCAS, Pere ,  BULKIN, Pavel ,  DAINEKA, Dmitri ,  LEEMPOEL, Patrick ,  DESCAMPS, Pierre ,  KERVYN DE MEERENDRE, Thibault

IPC分类号： H05H1/46 ,  H01J37/32

CPC分类号： H05H1/46 ,  H01J37/32192 ,  H01J37/32366 ,  H01J37/32678

摘要： A plasma excitation device is described for use in depositing a film on a substrate from a plasma formed by distributed electron cyclotron resonance. The device comprises a microwave antenna having an end from which microwaves are emitted, a magnet disposed in the region of the said antenna end and defining therewith an electron cyclotron resonance region in which a plasma can be generated, and a gas entry element having an outlet for a film precursor gas or a plasma gas. The outlet is arranged to direct gas towards a film deposition area situated beyond the magnet, as considered from the microwave antenna.