公开(公告)号：EP2455949A4

公开(公告)日：2015-04-22

申请号：EP10799591

申请日：2010-07-08

申请人： TOYO KOHAN CO LTD ,  SUMITOMO ELECTRIC INDUSTRIES

发明人： OKAYAMA HIRONAO ,  KUROKAWA TEPPEI ,  NANBU KOUJI ,  ISOBE YOSHIHIKO ,  KOSHIRO TAKASHI ,  KANEKO AKIRA ,  OTA HAJIME ,  OHKI KOTARO ,  YAMAGUCHI TAKASHI ,  OHMATSU KAZUYA

IPC分类号： H01B13/00 ,  B23K20/04 ,  C01G1/00 ,  C22C9/00 ,  C22C9/02 ,  C22C9/04 ,  C22F1/00 ,  C22F1/08 ,  C23F4/00 ,  H01B12/06

CPC分类号： H01L39/2454 ,  B32B15/01 ,  B32B15/015 ,  B32B15/04 ,  B32B15/20 ,  C22C9/00 ,  C22F1/08

公开(公告)号：EP2366815A4

公开(公告)日：2012-12-26

申请号：EP09825867

申请日：2009-10-20

申请人： TOYO KOHAN CO LTD

发明人： OKAYAMA HIRONAO ,  NANBU KOUJI ,  KANEKO AKIRA

IPC分类号： C30B25/18 ,  B32B15/08 ,  C23C14/02 ,  C30B1/04 ,  H01L21/205

CPC分类号： C30B1/02 ,  B32B15/08 ,  B32B15/20 ,  B32B27/281 ,  B32B2255/06 ,  B32B2255/20 ,  B32B2307/306 ,  B32B2307/518 ,  B32B2307/538 ,  B32B2307/732 ,  C22F1/08 ,  C23C14/562 ,  C30B1/04 ,  H01L31/03682 ,  H01L31/0392 ,  H01L31/18 ,  H05K1/0393 ,  H05K1/09 ,  H05K3/022 ,  H05K2201/0355 ,  H05K2203/1105 ,  Y02E10/546

公开(公告)号：EP3127647A4

公开(公告)日：2017-11-08

申请号：EP15772918

申请日：2015-03-27

申请人： TOYO KOHAN CO LTD

发明人： NANBU KOUJI ,  KUROKAWA TEPPEI ,  KOSHIRO TAKASHI ,  OKAYAMA HIRONAO

IPC分类号： B23K20/00 ,  B32B15/01

CPC分类号： B23K20/2275 ,  B23K20/002 ,  B23K20/023 ,  B23K20/04 ,  B23K20/16 ,  B23K20/24 ,  B23K35/0238 ,  B23K2203/02 ,  B23K2203/05 ,  B23K2203/08 ,  B23K2203/10 ,  B23K2203/14 ,  B23K2203/15 ,  B23K2203/166 ,  B23K2203/18 ,  B23K2203/20 ,  B23K2203/26 ,  B32B15/01 ,  B32B15/012 ,  B32B15/043 ,  B32B15/18 ,  B32B15/20 ,  C23F4/04 ,  H01J37/34

摘要： An object of the present invention is to provide a method for producing a metal laminate material that maintains sufficient bonding strength and has superior production efficiency. A method for producing a metal laminate material by bonding two sheets, one sheet composed of a material M1 and the other sheet composed of a material M2, wherein each of M1 and M2 is a metal or alloy comprising any one or more selected from the group consisting of Mg, Al, Ti, Cr, Mn, Fe, Co, Ni, Cu, Zn, Nb, Mo, Pd, Ag, In, Sn, Hf, Ta, W, Pb, and Bi, comprises the steps of: subjecting the faces of the two sheets to be bonded to sputtering treatment with inert gas ions under vacuum such that oxide layers on surface layers remain; temporarily bonding the two sheets by roll pressure bonding; and conducting a thermal treatment to thereby bond the two sheets, and, when Tm1 > Tm2 where Tm1(K) is the melting point of M1 and Tm2(K) is the melting point of M2, the temperature of the thermal treatment is 0.45Tm2 or more and less than 0.45Tm1, provided that the temperature is not more than Tm2.

公开(公告)号：EP3127648A4

公开(公告)日：2017-11-22

申请号：EP15774429

申请日：2015-03-27

申请人： TOYO KOHAN CO LTD

发明人： NANBU KOUJI ,  KUROKAWA TEPPEI ,  KOSHIRO TAKASHI ,  OKAYAMA HIRONAO

IPC分类号： B23K20/00 ,  B32B15/01

CPC分类号： B23K20/2275 ,  B23K20/00 ,  B23K20/02 ,  B23K20/04 ,  B23K20/24 ,  B23K2203/05 ,  B23K2203/10 ,  B23K2203/166 ,  B23K2203/20 ,  B32B15/01 ,  B32B15/012 ,  B32B15/043 ,  B32B15/18 ,  B32B15/20 ,  C22C21/00 ,  C22C38/02 ,  C22C38/04 ,  C22C38/44 ,  C23F4/00 ,  H01J37/34

摘要： An object of the present invention is to provide a production method for efficiently producing a metal laminate having high bonding strength. A method for producing a metal laminate material comprising the steps of: sputter etching faces to be bonded of a stainless steel and an aluminum such that an oxide layer remains on each face; temporarily bonding the faces to be bonded of the stainless steel and the aluminum by roll pressure bonding; and thermally treating the temporarily bonded laminate material at a temperature lower than the recrystallization temperature of the stainless steel to thermally diffuse at least a metal element comprised in the stainless steel into the aluminum.

公开(公告)号：EP2503560A4

公开(公告)日：2017-12-20

申请号：EP10831308

申请日：2010-11-12

申请人： TOYO KOHAN CO LTD ,  SUMITOMO ELECTRIC INDUSTRIES

发明人： OKAYAMA HIRONAO ,  NANBU KOUJI ,  KANEKO AKIRA ,  OTA HAJIME ,  OHKI KOTARO ,  YAMAGUCHI TAKASHI ,  HAYASHI KAZUHIKO ,  OHMATSU KAZUYA

IPC分类号： H01B12/06 ,  B32B15/01 ,  C21D8/12 ,  C22C9/00 ,  C22C19/03 ,  C22F1/00 ,  C22F1/08 ,  H01B13/00 ,  H01L39/24

CPC分类号： C22C9/00 ,  B32B15/015 ,  C21D8/1255 ,  C22C19/03 ,  C22C38/007 ,  C22C38/40 ,  C22F1/08 ,  H01L39/2454 ,  Y10T428/12903 ,  Y10T428/12924 ,  Y10T428/12979

摘要： Provided are a substrate for a superconducting compound and a method for manufacturing the substrate which can realize the excellent adhesive strength simultaneously with high orientation of copper. An absorbed material on a surface of a copper foil to which rolling is applied at a draft of 90% or more is removed by applying sputter etching to the surface of the copper foil, sputter etching is applied to a nonmagnetic metal sheet, the copper foil and the metal sheet are bonded to each other by applying a pressure to the copper foil and the metal sheet using reduction rolls, crystals of the copper in the copper foil are oriented by heating a laminated body formed bysuchbonding, copper is diffused into the metal sheet by heating with a copper diffusion distance of 10nm or more, and a protective layer is laminated to a surface of the copper foil of the laminated body.

公开(公告)号：EP2905362A4

公开(公告)日：2016-06-29

申请号：EP13843999

申请日：2013-08-23

申请人： TOYO KOHAN CO LTD ,  SUMITOMO ELECTRIC INDUSTRIES

发明人： KOSHIRO TAKASHI ,  OKAYAMA HIRONAO ,  KUROKAWA TEPPEI ,  NANBU KOUJI

IPC分类号： C30B29/22 ,  C22C9/00 ,  C22C9/02 ,  C22C9/04 ,  C22F1/00 ,  C22F1/08 ,  H01B12/06 ,  H01L39/24

CPC分类号： C30B29/22 ,  C22C9/00 ,  C22C9/02 ,  C22C9/04 ,  C22F1/08 ,  C30B1/04 ,  C30B23/025 ,  C30B25/183 ,  C30B29/52 ,  C30B33/02 ,  H01B12/06 ,  H01B13/0016 ,  H01L39/12 ,  H01L39/24 ,  H01L39/2454

摘要： An objective of the present invention is to provide a copper substrate for epitaxial growth, which has higher biaxial crystal orientation, and a method for manufacturing the same. The substrate for epitaxial growth of the present invention contains a biaxially crystal-oriented copper layer, wherein the full width at half maximum ”Æ of a peak based on the pole figure of the copper layer is within 5° and the tail width ”² of the peak based on the pole figure is within 15°. Such a substrate for epitaxial growth is manufactured by a 1 st step of performing heat treatment of a copper layer so that ”Æ is within 6° and the tail width ”² is within 25°, and after the 1 st step, a 2 nd step of performing heat treatment of the copper layer at a temperature higher than the temperature for heat treatment in the 1 st step, so that ”Æ is within 5° and the tail width ”² is within 15°.

摘要翻译： 本发明的一个目的是提供一种用于外延生长，它具有较高的双轴结晶配向，以及用于制造它的方法提供了一种铜基板。 用于本发明的外延生长用基板包含双轴取向晶体的铜层，worin半峰全宽“AE基于所述铜层的极点图中的峰的是在5°以内和尾部宽度”²的 根据极图的峰值是在15°。 外延生长这样的基板是由铜层进行热处理的第1步制成的，使得“AE为6度和尾宽度内”²是在25°，第1个步骤后，一个第二 在温度高于该温度下在第1个步骤中的热处理进行铜层的热处理，使工序“Æ是在5°以内和尾部宽度”²是15°以内。

公开(公告)号：EP2360715A4

公开(公告)日：2015-11-18

申请号：EP09825866

申请日：2009-10-20

申请人： TOYO KOHAN CO LTD

发明人： OKAYAMA HIRONAO ,  KANEKO AKIRA ,  NANBU KOUJI

IPC分类号： H01L21/20 ,  B21B47/00 ,  B23K20/00 ,  B23K20/24 ,  C22F1/00 ,  C22F1/08

CPC分类号： C22F1/08 ,  B32B15/01 ,  B32B15/015 ,  C22C9/00 ,  C22C38/02 ,  C22C38/44 ,  C22C38/58 ,  C30B25/18 ,  C30B29/06 ,  C30B29/16 ,  C30B29/40 ,  C30B29/52 ,  C30B33/00 ,  H01L23/142 ,  H01L31/03921 ,  H01L33/007 ,  H01L2924/0002 ,  H05K1/0393 ,  H05K1/09 ,  H05K3/022 ,  H05K2201/0355 ,  H05K2203/1105 ,  Y02E10/50 ,  H01L2924/00

摘要： Disclosed is a metal laminated substrate for forming an epitaxial growth film for forming a semiconductor element having high biaxial crystal orientation on a surface of a metal substrate and a method of manufacturing the metal laminated substrate. The manufacturing method includes the steps of activating at least one surface of a metal plate T1 by sputter etching or the like; activating at least one surface of a metal foil T2 made of Cu or a Cu alloy which is cold-rolled at a rolling reduction of 90% or more; laminating the metal plate and the metal foil such that an activated surface of the metal plate and an activated surface of the metal foil face each other in an opposed manner and applying cold rolling to the metal plate and the metal foil which are laminated to each other at a rolling reduction of 10% or less, for example; and biaxially orienting crystals of the metal foil by heat treatment at a temperature of not lower than 150°C and not higher than 1000°C.