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    Gallium nitride base compound semiconductor laser diode and producing method of III nitride compound semiconductor lasers
    1.
    发明公开
    Gallium nitride base compound semiconductor laser diode and producing method of III nitride compound semiconductor lasers 失效
    二氧化碳基金会

    公开(公告)号：EP0688070A1

    公开(公告)日：1995-12-20

    申请号：EP95105899.9

    申请日：1995-04-20

    申请人： Toyoda Gosei Co., Ltd. ,  RESEARCH DEVELOPMENT CORPORATION OF JAPAN ,  Akasaki, Isamu ,  Amano, Hiroshi

    发明人： Kato, Hisaki ,  Koide, Norikatsu ,  Koike, Masayoshi ,  Akasaki, Isamu ,  Amano, Hiroshi

    IPC分类号： H01S3/19

    CPC分类号： H01S5/32341 ,  H01S5/0202 ,  H01S5/0213

    摘要： The improved laser diode is made of a gallium nitride base compound semiconductor ((Al x Ga 1-x ) y In 1-y N; 0≦x≦1; 0≦y≦1) with a double heterojunction structure having the active layer held between layers having a greater band gap, the laser diode comprises mirror surfaces formed by cleaving said multi-layered coating and said sapphire substrate in directions parallel to 〈0001〉 (c axis) of said sapphire substrate. Further, in the improved process, only the intermediate zinc oxide (ZnO) layer is removed by wet etching with a ZnO-selective liquid etchant so as to form gaps between the sapphire substrate and the bottommost sub-layer of said semiconductor laser element layer; and said semiconductor laser element layer is cleaved with the aid of said gaps 20, with the resulting planes of cleavage being used as the mirror surfaces of the laser cavity.

    摘要翻译： 改进的激光二极管由具有双异质结结构的氮化镓基化合物半导体（（Al x Ga 1-x）y In 1-y N;0≤x≤1;0≤y≤1） 活性层保持在具有更大带隙的层之间，激光二极管包括通过在平行于所述蓝宝石衬底的＆Lang＆0001＆Rang＆（c轴）的方向上切割所述多层涂层和所述蓝宝石衬底而形成的镜面。 此外，在改进的方法中，通过用ZnO选择性液体蚀刻剂的湿蚀刻仅去除中间氧化锌（ZnO）层，以便在蓝宝石衬底和所述半导体激光元件层的最底层之间形成间隙; 并且所述半导体激光元件层借助于所述间隙20被切割，所得到的切割平面用作激光腔的镜面。

    Gallium nitride group compound semiconductor laser diode
    2.
    发明公开
    Gallium nitride group compound semiconductor laser diode 无效
    氮化镓族化合物半导体激光二极管

    公开(公告)号：EP0678945A1

    公开(公告)日：1995-10-25

    申请号：EP95105817.1

    申请日：1995-04-19

    申请人： TOYODA GOSEI CO., LTD. ,  RESEARCH DEVELOPMENT CORPORATION OF JAPAN ,  Akasaki, Isamu ,  Amano, Hiroshi

    发明人： Yamazaki, Shiro ,  Koide, Norikatsu ,  Manabe, Katsuhide ,  Akasaki, Isamu ,  Amano, Hiroshi

    IPC分类号： H01S3/19

    CPC分类号： H01S5/32341 ,  H01S5/3086

    摘要： A gallium nitride group compound semiconductor laser diode (10) satisfying the formula (Al x Ga 1-x ) y In 1-y N, inclusive of 0 ≦ x ≦ 1 and 0 ≦ y ≦ 1 is constituted by a double hetero-junction structure sandwiching an active layer (5) by layers (4, 6) having wider band gaps than the active layer (5). The active layer (5) is magnesium (Mg) doped p-type conductive gallium nitride group compound semiconductor satisfying the formula (Al x Ga 1-x ) y In 1-y N, inclusive of 0 ≦ x ≦ 1 and 0 ≦ y ≦ 1. In another embodiment, the active layer (5) is doped with silicon (Si). As a result, luminous efficiency is improved and threshold current for oscillation is lowered.

    摘要翻译： 满足式（Al x Ga 1-x）y In 1-y N（包括0≤x≤1且0≤y≤1）的氮化镓族化合物半导体激光二极管（10）由夹着有源层的双异质结构成 5）通过具有比有源层（5）更宽的带隙的层（4,6）。 有源层（5）是满足式（Al x Ga 1-x）y In 1-y N，包括0≤x≤1和0≤y≤1的镁（Mg）掺杂的p型导电氮化镓族化合物半导体。在另一个实施例 ，有源层（5）掺杂有硅（Si）。 结果，发光效率提高并且用于振荡的阈值电流降低。

    Compound semiconductor vapor phase epitaxial device
    6.
    发明公开
    Compound semiconductor vapor phase epitaxial device 失效
    VulrichtungfürDampfphasenepitaxie von zusammengesetzten Halbleitern。

    公开(公告)号：EP0559326A1

    公开(公告)日：1993-09-08

    申请号：EP93300724.7

    申请日：1993-02-01

    申请人： PIONEER ELECTRONIC CORPORATION ,  Amano, Hiroshi ,  Akasaki, Isamu

    发明人： Watanabe, Atsushi, c/o Pioneer Electronic Corp. ,  Amano, Hiroshi, Nijigaoka-higashidanchi ,  Hiramatsu, Kazumasa ,  Akasaki, Isamu

    IPC分类号： C30B25/14 ,  C23C16/44

    CPC分类号： C30B25/14 ,  C23C16/455

    摘要： A compound semiconductor vapor phase epitaxial device comprises a cylindrical reactor vessel (2), a plurality of flow channels (17, 27) disposed in the reactor vessel, a crystal substrate (7) disposed in one of the flow channels, a plurality of gas supply pipes for respectively supplying gas containing element of compound to be grown on the crystal substrate and at least one slit (10) or linearly arranged fine holes (P) communicating adjacent two flow channels so as to extend in a direction normal to a direction of the gas flow to form a laminate layer flow consisting of two or more than two gases at an upstream portion of location of the crystal substrate.

    摘要翻译： 化合物半导体气相外延装置包括圆柱形反应器容器（2），设置在反应器容器中的多个流动通道（17,27），设置在一个流动通道中的晶体基板（7），多个气体 用于分别供给在晶体基板上生长的化合物的气体的供给管和至少一个狭缝（10）或与两个流动通道相邻的线状排列的细孔（P），以沿着垂直于 气流在晶体基板的位置的上游部分处形成由两个或多于两个气体组成的层压层流。

    Light-emitting semiconductor device using gallium nitride group compound
    9.
    发明公开
    Light-emitting semiconductor device using gallium nitride group compound 失效
    Lichtemittierende Halbleitervorrichtung mit Gallium-Nitrid-Verbindung。

    公开(公告)号：EP0444630A1

    公开(公告)日：1991-09-04

    申请号：EP91102921.3

    申请日：1991-02-27

    申请人： TOYODA GOSEI CO., LTD. ,  KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHO ,  NAGOYA UNIVERSITY ,  RESEARCH DEVELOPMENT CORPORATION OF JAPAN

    发明人： Manabe, Katsuhide ,  Mabuchi, Akira ,  Kato, Hisaki ,  Sassa, Michinari ,  Koide, Norikatsu ,  Yamazaki, Shiro ,  Hashimoto, Masafumi ,  Akasaki, Isamu

    IPC分类号： H01L33/00

    CPC分类号： H01L33/32 ,  H01L33/007 ,  H01L33/025

    摘要： Disclosed herein are (1) a light-emitting semiconductor device that uses a gallium nitride compound semiconductor (Al x Ga 1-x N) in which the n-layer of n-type gallium nitride compound semiconductor (Al x Ga 1-x N) is of double-layer structure including an n-layer of low carrier concentration and an n⁺-layer of high carrier concentration, the former being adjacent to the i-layer of insulating gallium nitride compound semiconductor (Al x Ga 1-x N); (2) a light-emitting semiconductor device of similar structure as above in which the i-layer is of double-layer structure including an i L -layer of low impurity concentration containing p-type impurities in comparatively low concentration and an i H -layer of high impurity concentration containing p-type impurities in comparatively high concentration, the former being adjacent to the n-layer; (3) a light-emitting semiconductor device having both of the above-mentioned features and (4) a method of producing a layer of an n-type gallium nitride compound semiconductor (Al x Ga 1-x N) having a controlled conductivity from an organometallic compound by vapor phase epitaxy, by feeding a silicon-containing gas and other raw material gases together at a controlled mixing ratio.

    摘要翻译： 这里公开的是（1）使用其中n型氮化镓化合物半导体（Al x Ga 1-x N）的n层是双层结构的氮化镓化合物半导体（Al x Ga 1-x N）的发光半导体器件，包括 低载流子浓度的n层和高载流子浓度的n +层，前者与绝缘氮化镓化合物半导体（Al x Ga 1-x N）的i层相邻; （2）具有上述类似结构的发光半导体器件，其中i层是双层结构，其包括具有相对低浓度的p型杂质的低杂质浓度的iL层和iH层 含有较高浓度的p型杂质的高杂质浓度，前者与n层相邻; （3）具有上述特征的发光半导体器件和（4）由有机金属化合物具有受控导电性的n型氮化镓系化合物半导体（Al x Ga 1-x N）的层的制造方法， 通过以受控的混合比将含硅气体和其它原料气体一起供给到气相外延。