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    Gallium nitride group compound semiconductor laser diode
    1.
    发明公开
    Gallium nitride group compound semiconductor laser diode 无效
    氮化镓族化合物半导体激光二极管

    公开(公告)号：EP0678945A1

    公开(公告)日：1995-10-25

    申请号：EP95105817.1

    申请日：1995-04-19

    申请人： TOYODA GOSEI CO., LTD. ,  RESEARCH DEVELOPMENT CORPORATION OF JAPAN ,  Akasaki, Isamu ,  Amano, Hiroshi

    发明人： Yamazaki, Shiro ,  Koide, Norikatsu ,  Manabe, Katsuhide ,  Akasaki, Isamu ,  Amano, Hiroshi

    IPC分类号： H01S3/19

    CPC分类号： H01S5/32341 ,  H01S5/3086

    摘要： A gallium nitride group compound semiconductor laser diode (10) satisfying the formula (Al x Ga 1-x ) y In 1-y N, inclusive of 0 ≦ x ≦ 1 and 0 ≦ y ≦ 1 is constituted by a double hetero-junction structure sandwiching an active layer (5) by layers (4, 6) having wider band gaps than the active layer (5). The active layer (5) is magnesium (Mg) doped p-type conductive gallium nitride group compound semiconductor satisfying the formula (Al x Ga 1-x ) y In 1-y N, inclusive of 0 ≦ x ≦ 1 and 0 ≦ y ≦ 1. In another embodiment, the active layer (5) is doped with silicon (Si). As a result, luminous efficiency is improved and threshold current for oscillation is lowered.

    摘要翻译： 满足式（Al x Ga 1-x）y In 1-y N（包括0≤x≤1且0≤y≤1）的氮化镓族化合物半导体激光二极管（10）由夹着有源层的双异质结构成 5）通过具有比有源层（5）更宽的带隙的层（4,6）。 有源层（5）是满足式（Al x Ga 1-x）y In 1-y N，包括0≤x≤1和0≤y≤1的镁（Mg）掺杂的p型导电氮化镓族化合物半导体。在另一个实施例 ，有源层（5）掺杂有硅（Si）。 结果，发光效率提高并且用于振荡的阈值电流降低。

    Light-emitting semiconductor device using gallium nitride group compound
    4.
    发明公开
    Light-emitting semiconductor device using gallium nitride group compound 失效
    Lichtemittierende Halbleitervorrichtung mit Gallium-Nitrid-Verbindung。

    公开(公告)号：EP0444630A1

    公开(公告)日：1991-09-04

    申请号：EP91102921.3

    申请日：1991-02-27

    申请人： TOYODA GOSEI CO., LTD. ,  KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHO ,  NAGOYA UNIVERSITY ,  RESEARCH DEVELOPMENT CORPORATION OF JAPAN

    发明人： Manabe, Katsuhide ,  Mabuchi, Akira ,  Kato, Hisaki ,  Sassa, Michinari ,  Koide, Norikatsu ,  Yamazaki, Shiro ,  Hashimoto, Masafumi ,  Akasaki, Isamu

    IPC分类号： H01L33/00

    CPC分类号： H01L33/32 ,  H01L33/007 ,  H01L33/025

    摘要： Disclosed herein are (1) a light-emitting semiconductor device that uses a gallium nitride compound semiconductor (Al x Ga 1-x N) in which the n-layer of n-type gallium nitride compound semiconductor (Al x Ga 1-x N) is of double-layer structure including an n-layer of low carrier concentration and an n⁺-layer of high carrier concentration, the former being adjacent to the i-layer of insulating gallium nitride compound semiconductor (Al x Ga 1-x N); (2) a light-emitting semiconductor device of similar structure as above in which the i-layer is of double-layer structure including an i L -layer of low impurity concentration containing p-type impurities in comparatively low concentration and an i H -layer of high impurity concentration containing p-type impurities in comparatively high concentration, the former being adjacent to the n-layer; (3) a light-emitting semiconductor device having both of the above-mentioned features and (4) a method of producing a layer of an n-type gallium nitride compound semiconductor (Al x Ga 1-x N) having a controlled conductivity from an organometallic compound by vapor phase epitaxy, by feeding a silicon-containing gas and other raw material gases together at a controlled mixing ratio.

    摘要翻译： 这里公开的是（1）使用其中n型氮化镓化合物半导体（Al x Ga 1-x N）的n层是双层结构的氮化镓化合物半导体（Al x Ga 1-x N）的发光半导体器件，包括 低载流子浓度的n层和高载流子浓度的n +层，前者与绝缘氮化镓化合物半导体（Al x Ga 1-x N）的i层相邻; （2）具有上述类似结构的发光半导体器件，其中i层是双层结构，其包括具有相对低浓度的p型杂质的低杂质浓度的iL层和iH层 含有较高浓度的p型杂质的高杂质浓度，前者与n层相邻; （3）具有上述特征的发光半导体器件和（4）由有机金属化合物具有受控导电性的n型氮化镓系化合物半导体（Al x Ga 1-x N）的层的制造方法， 通过以受控的混合比将含硅气体和其它原料气体一起供给到气相外延。

    Gallium nitride group semiconductor light emitting diode and the process of producing the same
    7.
    发明公开
    Gallium nitride group semiconductor light emitting diode and the process of producing the same 失效
    镓 - 硝酸盐Halbleiter-Lumisneszenzdiode sowie Verfahren zu deren Herstellung。

    公开(公告)号：EP0277597A2

    公开(公告)日：1988-08-10

    申请号：EP88101267.8

    申请日：1988-01-28

    申请人： TOYODA GOSEI CO., LTD. ,  NAGOYA UNIVERSITY

    发明人： Manabe, Katsuhide ,  Okazaki, Nobuo ,  Akasaki, Isamu ,  Hiramatsu, Kazumasa ,  Amano, Hiroshi

    IPC分类号： H01L33/00 ,  H01L21/205 ,  C30B25/20

    CPC分类号： H01L33/40 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/02488 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02639 ,  H01L33/0008 ,  H01L33/007 ,  H01L33/32

    摘要： A thin film of SiO₂ (32) is patterned on an N layer consist­ing of N-type Aℓ x Ga 1-x N (inclusive of x = 0) (31). Next, I-type Aℓ x Ga 1-x N (inclusive of x = 0) (33) is selectively grown and the portion on the N layer (31) grows into an I-layer (33) consisting an active layer of a light emitting diode, and that on the SiO₂ thin film (32) grows into a conductive layer (34). Electrodes (35,36) are formed on the I-layer (33) and conductive layer (34) to constitute the light emitting diode. Also, on the surface a ({11 2 0}) of a sapphire substrate (24), a buffer layer (30) consisting of aluminum nitride is formed, onto which a gallium nitride group semiconductor (31) is formed.

    摘要翻译： 在由N型A 1 x Ga 1-x N（包括x = 0）（31）组成的N层上构图SiO 2（32）的薄膜。 接下来，选择性地生长I型A 1 x Ga 1-x N（包括x = 0）（33），并且N层（31）上的部分生长成I层（33），其包括发光的有源层 二极管，并且SiO 2薄膜（32）上的二极管生长成导电层（34）。 电极（35,36）形成在I层（33）和导电层（34）上以构成发光二极管。 此外，在蓝宝石衬底（24）的表面上形成由氮化铝构成的缓冲层（30），形成氮化镓族半导体（31）。