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公开(公告)号：EP2710629A1
公开(公告)日：2014-03-26
申请号：EP12721922.8
申请日：2012-05-04
IPC分类号： H01L21/322 , H01L29/872 , H01L29/868 , H01L21/263 , H01L21/265 , H01L29/16
CPC分类号： H01L29/1608 , H01L21/02529 , H01L21/046 , H01L21/263 , H01L21/26506 , H01L21/322 , H01L21/324 , H01L29/868 , H01L29/872
摘要： A process for producing a semiconductor device includes: forming an SiC epitaxial layer on an SiC substrate; implanting the epitaxial layer with ions; forming a gettering layer having a higher defect density than a defect density of the SiC substrate; and carrying out a heat treatment on the epitaxial layer. The semiconductor device includes an SiC substrate, an SiC epitaxial layer formed on the SiC substrate, and a gettering layer having a higher defect density than a defect density of the SiC substrate.
摘要翻译： 一种制造半导体器件的工艺包括：在SiC衬底上形成SiC外延层; 用离子注入外延层; 形成具有比SiC衬底的缺陷密度更高的缺陷密度的吸杂层; 并在外延层上进行热处理。 该半导体器件包括SiC衬底，在SiC衬底上形成的SiC外延层以及具有比SiC衬底的缺陷密度更高的缺陷密度的吸杂层。
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公开(公告)号：EP2857562B1
公开(公告)日：2017-09-27
申请号：EP13800683.8
申请日：2013-04-16
发明人： SHIRAI, Takayuki , DANNO, Katsunori
CPC分类号： C30B19/062 , C30B9/00 , C30B9/06 , C30B9/10 , C30B17/00 , C30B19/02 , C30B19/04 , C30B19/08 , C30B19/10 , C30B19/12 , C30B29/36
摘要： Provided are an SiC single-crystal ingot containing an SiC single crystal having a low threading dislocation density and low resisitivity; an SiC single crystal; and a production method for the SiC single crystal. The SiC single crystal ingot contains a seed crystal and a grown crystal grown by a solution process in which the seed crystal is the base point, the grown crystal of the SiC single crystal ingot containing a nitrogen density gradient layer in which the nitrogen content increases in the direction of growth from the seed crystal.
摘要翻译： 提供一种包含穿透位错密度低且电阻率低的SiC单晶的SiC单晶锭; SiC单晶; 以及SiC单晶的制造方法。 SiC单晶锭包含晶种和通过以籽晶为基点的溶液工艺生长的生长晶体，含有氮含量增加的氮密度梯度层的SiC单晶锭的生长晶体 从晶种生长的方向。
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公开(公告)号：EP2455515B1
公开(公告)日：2018-01-10
申请号：EP09847353.1
申请日：2009-07-17
摘要： The present invention provides a method of production of an SiC single crystal using the solution method which prevents the formation of defects due to seed tough, i.e., causing a seed crystal to touch the melt, and thereby causes growth of an Si single crystal reduced in defect density. The method of the present invention is a method of production of an SiC single crystal by causing an SiC seed crystal to touch a melt containing Si in a graphite crucible to thereby cause growth of the SiC single crystal on the SiC seed crystal, characterized by making the SiC seed crystal touch the melt, then making the melt rise in temperature once to a temperature higher than the temperature at the time of touch and also higher than the temperature for causing growth.
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5.发明公开SiC SINGLE-CRYSTAL INGOT, SiC SINGLE CRYSTAL, AND PRODUCTION METHOD FOR SAME 有权SIC-EINKRISTALLINGOT UND HERSTELLUNGSVERFAHRENDAFÜR
公开(公告)号：EP2857562A1
公开(公告)日：2015-04-08
申请号：EP13800683.8
申请日：2013-04-16
发明人： SHIRAI, Takayuki , DANNO, Katsunori
CPC分类号： C30B19/062 , C30B9/00 , C30B9/06 , C30B9/10 , C30B17/00 , C30B19/02 , C30B19/04 , C30B19/08 , C30B19/10 , C30B19/12 , C30B29/36
摘要： Provided are an SiC single-crystal ingot containing an SiC single crystal having a low threading dislocation density and low resisitivity; an SiC single crystal; and a production method for the SiC single crystal. The SiC single crystal ingot contains a seed crystal and a grown crystal grown by a solution process in which the seed crystal is the base point, the grown crystal of the SiC single crystal ingot containing a nitrogen density gradient layer in which the nitrogen content increases in the direction of growth from the seed crystal.
摘要翻译： 提供含有具有低穿透位错密度和低电阻率的SiC单晶的SiC单晶锭; SiC单晶; 以及SiC单晶的制造方法。 SiC单晶锭含有晶种和通过晶种为基点的溶液工艺生长的生长晶体，含有氮含量增加的氮浓度梯度层的SiC单晶锭的生长晶体 从晶种生长的方向。
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6.发明公开SIC SINGLE CRYSTAL AND MANUFACTURING PROCESS THEREFOR 审中-公开SIC-EINKRISTALL UND HERSTELLUNGSVERFAHRENDAFÜR
公开(公告)号：EP2733239A1
公开(公告)日：2014-05-21
申请号：EP11868866.2
申请日：2011-08-02
发明人： DANNO, Katsunori
IPC分类号： C30B29/36
CPC分类号： C30B11/14 , C30B9/06 , C30B29/36 , Y10T428/24488
摘要： A SiC single crystal having high crystallinity and a large diameter is provided.
A SiC single crystal comprising a seed crystal with a c-plane and a non-c-plane, and a c-plane growth portion and an enlarged diameter portion that have grown from the c-plane and the non-c-plane of the seed crystal as origins in the direction of the c-plane and the direction of the non-c-plane,
wherein a continuous region free of threading dislocations is present in a peripheral portion of a plane that is parallel to the c-plane of the seed crystal, and contains the seed crystal and the enlarged diameter portion, wherein the area of the continuous region occupies 50% or more of the total area of the plane.摘要翻译： 提供具有高结晶度和大直径的SiC单晶。 包括具有c面和非c面的晶种的SiC单晶，以及从c面和非c面生长的c面生长部和扩径部 晶种作为c面的方向和非c面的方向的起点，其中，在平行于所述c面的平面的平面的周边部分存在没有穿透位错的连续区域 晶种，并且包含晶种和扩大直径部分，其中连续区域的面积占面积总面积的50％以上。
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7.发明公开
公开(公告)号：EP2455515A1
公开(公告)日：2012-05-23
申请号：EP09847353.1
申请日：2009-07-17
摘要： The present invention provides a method of production of an SiC single crystal using the solution method which prevents the formation of defects due to seed tough, i.e., causing a seed crystal to touch the melt, and thereby causes growth of an Si single crystal reduced in defect density. The method of the present invention is a method of production of an SiC single crystal by causing an SiC seed crystal to touch a melt containing Si in a graphite crucible to thereby cause growth of the SiC single crystal on the SiC seed crystal, characterized by making the SiC seed crystal touch the melt, then making the melt rise in temperature once to a temperature higher than the temperature at the time of touch and also higher than the temperature for causing growth.
摘要翻译： 本发明提供一种使用防止由于种子韧性形成缺陷的溶液法的SiC单晶的制造方法，即使晶种接触熔融物，从而使Si单晶的生长减少 缺陷密度。 本发明的方法是通过使SiC晶种与石墨坩埚中含有Si的熔体接触从而使SiC单晶在SiC晶种上生长而制造SiC单晶的方法，其特征在于， SiC晶种接触熔体，然后使熔体温度上升一次至高于触摸时温度的温度，并高于引起生长的温度。
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公开(公告)号：EP3045571A1
公开(公告)日：2016-07-20
申请号：EP14843843.5
申请日：2014-09-01
发明人： DANNO, Katsunori
摘要： A SiC single crystal having low density of threading screw dislocations, threading edge dislocations, micropipe defects, base plane dislocations and stacking faults is provided. This is achieved by a method for producing a SiC single crystal in which a SiC seed crystal substrate is contacted with a Si-C solution having a temperature gradient such that the temperature decreases from the interior toward the surface, to grow a SiC single crystal, the method comprising: a first step in which a SiC single crystal is grown with a (1-100) plane as the growth surface, a second step in which a {0001} plane is exposed from the grown SiC single crystal, and a third step in which the SiC single crystal having the exposed {0001} plane is used as a seed crystal, and the {0001} plane is used as the growth surface for growth of a SiC single crystal.
摘要翻译： 提供了具有低密度螺纹螺位错，螺纹边缘位错，微管缺陷，基面位错和堆垛层错的SiC单晶。 这可以通过一种制造SiC单晶的方法来实现，其中SiC晶种基板与具有温度梯度的Si-C溶液接触，使得温度从内部朝向表面降低，以生长SiC单晶， 该方法包括：第一步，其中以（1-100）面作为生长面生长SiC单晶;第二步，其中{0001}面从生长的SiC单晶暴露;以及第三步 其中具有暴露的{0001}面的SiC单晶被用作晶种，并且{0001}面被用作用于SiC单晶生长的生长面的步骤。
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公开(公告)号：EP3026146A1
公开(公告)日：2016-06-01
申请号：EP14830083.3
申请日：2014-07-17
发明人： DANNO, Katsunori
摘要： A method for producing a SiC substrate with an epitaxial layer, which can prevent inventory of wafers from unduly increasing and wasteful production, is provided. This is achieved by a method for producing a SiC substrate with an epitaxial layer one at a time, the method comprising growing an epitaxial layer and growing a SiC substrate on a seed crystal substrate, and the method further comprising removing the obtained SiC substrate with the epitaxial layer from the seed crystal substrate.
摘要翻译： 提供了一种用于制造具有外延层的SiC衬底的方法，该方法可防止晶片库存过度增加和浪费性生产。 这通过用于制造具有外延层的SiC衬底的方法来实现，所述方法包括生长外延层并且在晶种衬底上生长SiC衬底，并且所述方法还包括用所述衬底去除所获得的SiC衬底 外延层与晶种基板接触。
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10.发明公开METHOD FOR PRODUCING n-TYPE SiC MONOCRYSTAL 有权VERFAHREN ZUR HERSTELLUNG N-DOTIERTER SIC-MONOKRISTALLELE
公开(公告)号：EP2639344A1
公开(公告)日：2013-09-18
申请号：EP11840494.6
申请日：2011-11-04
发明人： KUSUNOKI, Kazuhiko , KAMEI, Kazuhito , YASHIRO, Nobuyoshi , MORIGUCHI, Kouji , OKADA, Nobuhiro , DANNO, Katsunori , DAIKOKU, Hironori
摘要： Provided is a method for manufacturing an n-type SiC single crystal, the method being able to suppress the variation in nitrogen concentration among a plurality of n-type SiC single crystal ingots manufactured. A method for manufacturing an n-type SiC single crystal in the present embodiment includes the steps of: providing a manufacturing apparatus (100) including a chamber (1) having an area in which a crucible (7) is to be disposed; heating the area in which the crucible (7) is to be disposed and evacuating the gas in the chamber (1); filling, after the evacuation, the chamber (1) with a mixed gas containing a noble gas and nitrogen gas; heating and melting a starting material housed in the crucible (7) disposed in the area to produce a SiC solution (8) containing silicon and carbon; and immersing a SiC seed crystal into the SiC solution under the mixed gas atmosphere to grow an n-type SiC single crystal on the SiC seed crystal.
摘要翻译： 提供一种制造n型SiC单晶的方法，该方法能够抑制制造的多个n型SiC单晶锭中的氮浓度的变化。 本实施方式的n型SiC单晶的制造方法包括以下工序：提供具有室（1）的制造装置（100），所述室具有要设置坩埚（7）的区域; 加热要安置坩埚（7）的区域并抽空腔室（1）中的气体; 在用惰性气体和氮气的混合气体填充室（1）后， 加热和熔化容纳在设置在该区域中的坩埚（7）中的原料以产生含有硅和碳的SiC溶液（8）; 并在混合气体气氛下将SiC晶种浸入SiC溶液中，以在SiC晶种上生长n型SiC单晶。
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