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    Metal film forming method
    1.
    发明公开
    Metal film forming method 失效
    金属膜形成方法

    公开(公告)号：EP0465264A3

    公开(公告)日：1992-08-05

    申请号：EP91306118.0

    申请日：1991-07-05

    申请人： Tsubouchi, Kazuo

    发明人： Tsubouchi, Kazuo ,  Masu, Kazuya

    IPC分类号： H01L21/768 ,  H01L21/285 ,  H01L21/3205

    CPC分类号： H01L23/53214 ,  H01L21/321 ,  H01L21/76877 ,  H01L21/76883 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A metal film forming method comprises steps of: forming a non-monocrystalline metal film principally composed of aluminum, in contact, at least in a part thereof, with a monocrystalline metal principally composed of aluminum; and heating the non-monocrystalline metal film to convert at least a part thereof into monocrystalline state.

    摘要翻译： 金属成膜方法包括以下步骤：将主要由铝组成的非单晶金属膜至少部分地与主要由铝组成的单晶金属接触; 并加热非单晶金属膜，将其至少一部分转化为单晶态。

    Process for forming deposition film
    2.
    发明公开
    Process for forming deposition film 失效
    Verfahren zur Herstellung eines aufgedampften Films。

    公开(公告)号：EP0493002A1

    公开(公告)日：1992-07-01

    申请号：EP91311832.9

    申请日：1991-12-19

    申请人： Tsubouchi, Kazuo

    发明人： Tsubouchi, Kazuo ,  Masu, Kazuya

    IPC分类号： C23C16/02 ,  C23C16/20 ,  H01L21/306 ,  H01L21/285

    CPC分类号： H01L21/02046 ,  C23C16/0227 ,  C23C16/20 ,  H01L21/28562 ,  H01L21/32051 ,  H01L21/76879

    摘要： A process for forming a deposition film comprising aluminum comprises the steps of: treating chemically a surface of a substrate having an electron-donative surface and a non-electron-donative surface so as to terminate the electron-donative surface with hydrogen atoms, and thereafter placing the substrate in a space for deposition film formation; introducing gas comprising alkylaluminum hydride and hydrogen gas into the space for deposition film formation; and forming an aluminum film selectively on the electron-donative surface by maintaining the substrate at a temperature in the range of from not lower than the decomposition temperature of the alkylaluminum hydride to not higher than 450°C.

    摘要翻译： 用于形成包含铝的沉积膜的方法包括以下步骤：化学处理具有给电子表面和非给电子表面的衬底的表面，以便用氢原子终止给电子表面，然后 将基板放置在用于沉积膜形成的空间中; 将包含氢化烷基铝和氢气的气体引入用于沉积膜形成的空间中; 并且通过将基板保持在不低于氢化烷基铝的分解温度至不高于450℃的温度范围内的温度下，在供电表面上选择性地形成铝膜。

    Apparatus for vaporizing liquid raw material and apparatus for forming thin film
    4.
    发明公开
    Apparatus for vaporizing liquid raw material and apparatus for forming thin film 失效
    一种用于液体原料和设备形成薄膜的蒸发。

    公开(公告)号：EP0548926A1

    公开(公告)日：1993-06-30

    申请号：EP92121821.0

    申请日：1992-12-22

    申请人： Tsubouchi, Kazuo

    发明人： Tsubouchi, Kazuo ,  Masu, Kazuya

    IPC分类号： C23C16/44 ,  B01D1/16 ,  B01D1/14 ,  B01D3/06

    CPC分类号： C23C16/4557 ,  B01D1/14 ,  B01D1/16 ,  B01D3/06 ,  C23C16/4486

    摘要： An apparatus for vaporizing a liquid raw material (2) comprises a nozzle (4) with an open tip end for ejecting a liquid raw material into a heated gas (31) atmosphere as liquid droplets and a heated plate (30) with a small opening (40) disposed in front of the nozzle, a space opposite to that occupied by the nozzle with respect to the plate being evacuated.

    摘要翻译： 用于蒸发液体原料（2）装置的喷嘴包括（4）用于与小开口喷射液体原料到加热气体（31）的气氛作为液滴和加热的板（30）的开放末端 （40）在喷嘴的前方布置的空间相对的喷嘴并通过相对于所述板被抽真空占据。

    Metal film forming method
    5.
    发明公开
    Metal film forming method 失效
    Verfahren zur Herstellung einer Metallschicht。

    公开(公告)号：EP0465264A2

    公开(公告)日：1992-01-08

    申请号：EP91306118.0

    申请日：1991-07-05

    申请人： Tsubouchi, Kazuo

    发明人： Tsubouchi, Kazuo ,  Masu, Kazuya

    IPC分类号： H01L21/768 ,  H01L21/285 ,  H01L21/3205

    CPC分类号： H01L23/53214 ,  H01L21/321 ,  H01L21/76877 ,  H01L21/76883 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A metal film forming method comprises steps of:
    forming a non-monocrystalline metal film principally composed of aluminum, in contact, at least in a part thereof, with a monocrystalline metal principally composed of aluminum; and
    heating the non-monocrystalline metal film to convert at least a part thereof into monocrystalline state.

    摘要翻译： 金属成膜方法包括以下步骤：将主要由铝组成的非单晶金属膜至少部分地与主要由铝组成的单晶金属接触; 并加热非单晶金属膜，将其至少一部分转化为单晶态。

    Code division multiplex communication system
    7.
    发明公开
    Code division multiplex communication system 失效
    码分多路复用通信系统

    公开(公告)号：EP0859471A2

    公开(公告)日：1998-08-19

    申请号：EP98300644.6

    申请日：1998-01-29

    申请人： Tsubouchi, Kazuo

    发明人： Tsubouchi, Kazuo ,  Masu, Kazuya ,  Fujita, Yasuhito

    IPC分类号： H04B1/707 ,  H04J13/04

    CPC分类号： H04B1/7093

    摘要： A code division multiplex communications system comprises: receiving means (1,2) for receiving a radio wave and transforming the radio wave to an electric signal; voltage-current converting means (101) for converting the electric signal to a current signal; current delaying means (102, 102 2 ... 102 n ) for sequentially reading the electric signal at a timing of a clock pulse; adding and subtracting means (105) for adding and subtracting output currents of the current delaying means in accordance with a spread code; and reproducing means (107) for reproducing a transmission signal on the basis of an output of the adding and subtracting means.

    摘要翻译： 码分多路复用通信系统包括：接收装置（1,2），用于接收无线电波并将无线电波变换成电信号; 电压 - 电流转换装置（101），用于将电信号转换为电流信号; 电流延迟装置（102,1022,102n），用于在时钟脉冲的定时顺序读取电信号; 加法和减法装置（105），用于根据扩展码对电流延迟装置的输出电流进行加和减; 和再现装置（107），用于根据加法和减法装置的输出再现传输信号。

    Semiconductor circuit device wiring and semiconductor circuit device
    10.
    发明公开
    Semiconductor circuit device wiring and semiconductor circuit device 失效
    Verdrahtung einer Halbleiterschaltkreisanordnung und Halbleiterschaltkreisanordnung。

    公开(公告)号：EP0510969A2

    公开(公告)日：1992-10-28

    申请号：EP92303655.2

    申请日：1992-04-23

    申请人： Tsubouchi, Kazuo

    发明人： Tsubouchi, Kazuo ,  Ohmi, Tadahiro ,  Hiura, Yohei ,  Masu, Kazuya

    IPC分类号： H01L23/532

    CPC分类号： H01L23/53214 ,  H01L23/53228 ,  H01L23/53257 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A semiconductor circuit device wiring is provided in which the wiring connected to a semiconductor element is composed of a crystalline material. The crystal axis direction along which nearest neighboring atoms in a single crystal constituting the crystalline material are arranged and the electric current direction through the wiring are crossed with each other at an angle of 22.5° or less.

    摘要翻译： 提供一种半导体电路器件布线，其中连接到半导体元件的布线由结晶材料构成。 布置构成结晶材料的单晶中最靠近的原子的晶轴方向，通过布线的电流方向以22.5°以下的角度相互交叉。