-
1.发明公开
公开(公告)号：EP1867687A4
公开(公告)日：2009-06-03
申请号：EP06729340
申请日：2006-03-17
IPC分类号： C09D7/12 , C09D183/00 , H01L21/316
CPC分类号： C09D183/04 , C08K3/02 , C09D7/61 , H01L21/02126 , H01L21/02142 , H01L21/02203 , H01L21/02282 , H01L21/02337 , H01L21/31695 , Y10T428/249953
摘要： A precursor composition for porous film comprising at least one member selected from the group consisting of compounds represented by the following general formulas: Si(OR 1 ) 4 and R a (Si)(OR 2 ) 4-a (in the formulas, R 1 represents a monovalent organic group; R represents a hydrogen atom, a fluorine atom or a monovalent organic group; R 2 represents a monovalent organic group; a is an integer ranging from 1 to 3, provided that R, R 1 and R 2 may be the same or different); a heat decomposable organic compound capable of being thermally decomposed at a temperature of not less than 250°C; and at least one element selected from the group consisting of elements each having a catalytic action, and organic solvent. A hydrophobic compound is subjected to a gas-phase polymerization reaction in the presence of a solution of this precursor composition to thus form a hydrophobic porous film having a low dielectric constant, a low refractive index and high mechanical strength. A semiconductor device prepared using the porous film.
-
2.发明公开
公开(公告)号：EP2025709A4
公开(公告)日：2010-03-24
申请号：EP07743462
申请日：2007-05-16
申请人： ULVAC INC
IPC分类号： C08J9/36 , C08G77/18 , C09D5/25 , C09D7/12 , C09D183/04 , H01L21/312 , H01L21/316
CPC分类号： C09D183/04 , C08G77/04 , C08G77/56 , C08G77/58 , C09D183/14 , H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02282 , H01L21/02337 , H01L21/02348 , H01L21/3122 , H01L21/31695 , Y10T428/249921 , Y10T428/249953
-
3.发明公开PROCESS FOR PRODUCING MODIFIED POROUS SILICA FILM, MODIFIED POROUS SILICA FILM OBTAINED BY THE PROCESS, AND SEMICONDUCTOR DEVICE EMPLOYING THE MODIFIED POROUS SILICA FILM 审中-公开用于生产改性的多孔硅石薄膜，通过过程GOT改性多孔质二氧化硅膜和改性的多孔硅石薄膜中使用的半导体COMPONENT
公开(公告)号：EP1855313A4
公开(公告)日：2011-09-28
申请号：EP06713744
申请日：2006-02-15
申请人： ULVAC INC , TOKYO ELECTRON LTD
发明人： FUJII NOBUTOSHI , KOHMURA KAZUO , MIYOSHI HIDENORI , TANAKA HIROFUMI , OIKE SHUNSUKE , MURAKAMI MASAMI , KUBOTA TAKESHI , KURANO YOSHITO
IPC分类号： H01L21/316 , C01B33/12 , H01L21/768 , H01L23/522
CPC分类号： H01L21/76826 , C01B33/12 , H01L21/02126 , H01L21/02203 , H01L21/02214 , H01L21/02282 , H01L21/02337 , H01L21/31608 , H01L21/31695 , Y10T428/249994
-
-
搜索结果
3 条记录 (耗时 0.007 秒)
