摘要:
A precursor composition for porous film comprising at least one member selected from the group consisting of compounds represented by the following general formulas: Si(OR 1 ) 4 and R a (Si)(OR 2 ) 4-a (in the formulas, R 1 represents a monovalent organic group; R represents a hydrogen atom, a fluorine atom or a monovalent organic group; R 2 represents a monovalent organic group; a is an integer ranging from 1 to 3, provided that R, R 1 and R 2 may be the same or different); a heat decomposable organic compound capable of being thermally decomposed at a temperature of not less than 250°C; and at least one element selected from the group consisting of elements each having a catalytic action, and organic solvent. A hydrophobic compound is subjected to a gas-phase polymerization reaction in the presence of a solution of this precursor composition to thus form a hydrophobic porous film having a low dielectric constant, a low refractive index and high mechanical strength. A semiconductor device prepared using the porous film.
摘要:
The invention provides a sealing composition including: polymer (A) containing a cationic functional group and having a weight average molecular weight of from 2,000 to 1,000,000; and a benzotriazole compound; in which the content of the polymer (A) is from 0.05 parts by mass to 0.20 parts by mass with respect to 100 parts by mass of the sealing composition; in which the content of the benzotriazole compound in the sealing composition is from 3 ppm by mass to 200 ppm by mass; and in which the sealing composition has a pH of from 3.0 to 6.5.
摘要:
Provided is a method for manufacturing a composite body, the method containing: a composition preparation process of preparing a composition that contains a polymer having a cationic functional group and having a weight average molecular weight of from 2,000 to 1,000,000, and that has a pH of from 2.0 to 11.0; a composite member preparation process of preparing a composite member that includes a member A and a member B, a surface of the member B having an isoelectric point that is lower than an isoelectric point of a surface of the member A by 2.0 or more and the isoelectric point of the member B being from 1.0 to 7.5, and that satisfies a relationship: the isoelectric point of a surface of the member B