-
公开(公告)号：EP0675410B1
公开(公告)日：1999-08-04
申请号：EP95301946.0
申请日：1995-03-23
发明人： Urano, Fumiyoshi, c/o Tokyo Kenkyusho , Yasuda, Takanori, c/o Tokyo Kenkyusho , Katsuyama, Akiko , Yamashita, Kazuhiro
CPC分类号： G03F7/091 , G03F7/0045 , G03F7/039 , Y10S430/106 , Y10S430/127 , Y10S430/128
-
2.发明公开Resist composition for deep ultraviolet light 失效Resistzusammensetzungfürtiefe Ultraviolettbelichtung。
公开(公告)号：EP0675410A1
公开(公告)日：1995-10-04
申请号：EP95301946.0
申请日：1995-03-23
发明人： Urano, Fumiyoshi, c/o Tokyo Kenkyusho , Yasuda, Takanori, c/o Tokyo Kenkyusho , Katsuyama, Akiko , Yamashita, Kazuhiro
CPC分类号： G03F7/091 , G03F7/0045 , G03F7/039 , Y10S430/106 , Y10S430/127 , Y10S430/128
摘要： A resist composition for deep ultraviolet light comprising (a) one of the following resin components (i)-(iii): (i) a resin which becomes alkali-soluble by eliminating protective groups by the action of an acid, (ii) a combination of an alkali-soluble resin and a dissolution-inhibiting compound, and (iii) a combination of an alkali-soluble resin and a crosslinkable compound, (b) an acid generater, (c) a special anthracene derivative, and (d) a solvent, is suitable for forming a pattern using deep ultraviolet light, KrF excimer laser light, etc., on a highly reflective substrate having level differences due to absorption of undesirable reflected deep ultraviolet light.
摘要翻译： 一种深紫外光的抗蚀剂组合物，其特征在于，含有（a）以下树脂成分（i）〜（iii）中的任一种：（i）通过酸的除去保护基而成为碱溶性的树脂，（ⅱ） 碱溶性树脂和溶解抑制性化合物的组合，（iii）碱溶性树脂和交联性化合物的组合，（b）酸产生剂，（c）特殊的蒽衍生物，（d） 溶剂适用于使用深紫外光，KrF准分子激光等在由于吸收不期望的反射深紫外光而具有水平差的高反射性基板上形成图案。
-
3.发明公开Apparatus for controlling relation in position between a photomask and a wafer 失效Vorrichtung zur Kontrolle desLageverhältnisseszwischen einer Photomaske und einemPlättchen。
公开(公告)号：EP0309281A2
公开(公告)日：1989-03-29
申请号：EP88308878.3
申请日：1988-09-23
发明人： Sato, Takeo , Aoki, Shinichiro , Yamaguchi, Katsumasa , Kaneko, Tadashi , Nomura, Noboru , Koga, Keisuke , Yamashita, Kazuhiro
IPC分类号： H01L21/00
CPC分类号： G03F9/7065 , G03F9/7049 , H01L21/682
摘要： A system for controlling the relation in position between a photomask and a wafer for use in manufacturing apparatus of a highly integrated circuit such as large scale integration (LSI). The position control system includes a coherent light source for generating two light beams which are different in frequency and polarizing direction from each other. The light beams from the coherent light source is introduced into a first diffraction grating and the diffracted light from the first diffraction grating selectively pass through a telecentric lens system and are led to second and third diffraction gratings respectively disposed on the photomask and the wafer. Light beat signals are obtained in correspondance with the diffracted light from the second and third diffraction gratings and the position relation between the photomask and wafer is controlled on the basis of the phase difference between the obtained light beat signals which corresponds to the position difference between the photomask and the wafer.
摘要翻译： 一种用于控制在诸如大规模集成（LSI）的高度集成电路的制造装置中使用的光掩模和晶片之间的位置关系的系统。 位置控制系统包括相干光源，用于产生频率和偏振方向彼此不同的两个光束。 来自相干光源的光束被引入到第一衍射光栅中，并且来自第一衍射光栅的衍射光选择性地通过远心透镜系统，并被引导到分别设置在光掩模和晶片上的第二和第三衍射光栅。 根据来自第二和第三衍射光栅的衍射光获得光拍信号，并且基于获得的光拍信号之间的相位差来控制光掩模和晶片之间的位置关系，该相位差对应于第二和第三衍射光栅之间的位置差 光掩模和晶片。
-
4.发明授权Apparatus for controlling relation in position between a photomask and a wafer 失效装置，用于控制光掩模和晶片之间的位置关系。
公开(公告)号：EP0309281B1
公开(公告)日：1995-03-08
申请号：EP88308878.3
申请日：1988-09-23
发明人： Sato, Takeo , Aoki, Shinichiro , Yamaguchi, Katsumasa , Kaneko, Tadashi , Nomura, Noboru , Koga, Keisuke , Yamashita, Kazuhiro
IPC分类号： H01L21/00
CPC分类号： G03F9/7065 , G03F9/7049 , H01L21/682
-
公开(公告)号：EP0883163A3
公开(公告)日：1998-12-23
申请号：EP98112004.1
申请日：1995-06-30
IPC分类号： H01L21/027 , G03F7/26
CPC分类号： G03F7/322 , G03F7/265 , G03F7/32 , H01L21/0271 , H01L21/0274 , H01L21/0275 , H01L21/0337
摘要： A resist film is formed on a semiconductor substrate by using a chemical amplification resist which generates a base in response to the radiation of KrF excimer laser light and which reacts with the base. If the resist film is irradiated with the KrF excimer laser light through a mask, the base is generated in the surface of an exposed portion of the resist film, so that the surface of the exposed portion is made hydrophilic by the base. If water vapor is supplied to the surface of the resist film, water is diffused from the surface of the exposed portion into a deep portion. If vapor of e.g. methyltriethoxysilane is sprayed onto the surface of the resist film in air at a relative humidity of 95%, an oxide film with a sufficiently large thickness is selectively formed on the surface of the exposed portion.
摘要翻译： 通过使用化学放大抗蚀剂在半导体衬底上形成抗蚀剂膜，所述化学放大抗蚀剂响应于KrF准分子激光的辐射而产生碱并与基底反应。 如果通过掩模用KrF准分子激光照射抗蚀剂膜，则基底在抗蚀剂膜的暴露部分的表面中产生，使得暴露部分的表面被基底亲水化。 如果水蒸气供应到抗蚀剂膜的表面，则水从暴露部分的表面扩散到深部。 如果例如 甲基三乙氧基硅烷在相对湿度为95％的空气中喷涂到抗蚀剂膜的表面上，在暴露部分的表面上选择性地形成具有足够厚度的氧化膜。
-
公开(公告)号：EP0691674A3
公开(公告)日：1996-05-01
申请号：EP95110282.1
申请日：1995-06-30
IPC分类号： H01L21/027 , G03F7/26
CPC分类号： G03F7/322 , G03F7/265 , G03F7/32 , H01L21/0271 , H01L21/0274 , H01L21/0275 , H01L21/0337
摘要： A resist film is formed on a semiconductor substrate by using a chemical amplification resist which generates an acid (or base) in response to the radiation of KrF excimer laser light and which reacts with the acid (base). If the resist film is irradiated with the KrF excimer laser light through a mask, the acid (base) is generated in the surface of an exposed portion of the resist film, so that the surface of the exposed portion is made hydrophilic by the acid (base). If water vapor is supplied to the surface of the resist film, water is diffused from the surface of the exposed portion into a deep portion. If vapor of e.g. methyltriethoxysilane is sprayed onto the surface of the resist film in air at a relative humidity of 95%, an oxide film with a sufficiently large thickness is selectively formed on the surface of the exposed portion.
摘要翻译： 通过使用化学放大抗蚀剂在半导体衬底上形成抗蚀剂膜，所述化学放大抗蚀剂响应于KrF准分子激光的辐射而产生酸（或碱）并且与酸（碱）反应。 如果通过掩模用KrF准分子激光照射抗蚀剂膜，则在抗蚀剂膜的暴露部分的表面中产生酸（碱），使得暴露部分的表面通过酸而变得亲水（ 基础）。 如果水蒸气供应到抗蚀剂膜的表面，则水从暴露部分的表面扩散到深部。 如果例如 甲基三乙氧基硅烷在相对湿度为95％的空气中喷涂到抗蚀剂膜的表面上，在暴露部分的表面上选择性地形成具有足够厚度的氧化膜。
-
公开(公告)号：EP0665470A3
公开(公告)日：1996-04-03
申请号：EP95100633.7
申请日：1995-01-18
CPC分类号： G03F7/16 , G03F7/085 , G03F7/11 , Y10S438/949
摘要： An acid solution is fed onto a TiN film formed on a semiconductor substrate. So, the TiN film is dipped into the acid solution, whereupon the surface of the semiconductor substrate is neutralized or is made less basic. Then, a chemically amplified resist, containing an acid generator which produces an acid when irradiated with radiant rays and a compound reactive to acids, is applied to the semiconductor substrate, to form a resist film. This is followed by a step for sending radiant rays upon the resist film to expose it. Then, the exposed resist pattern is developed to form a resist pattern without footing or scumming and under-cutting.
-
公开(公告)号：EP0691674A2
公开(公告)日：1996-01-10
申请号：EP95110282.1
申请日：1995-06-30
IPC分类号： H01L21/027 , G03F7/26
CPC分类号： G03F7/322 , G03F7/265 , G03F7/32 , H01L21/0271 , H01L21/0274 , H01L21/0275 , H01L21/0337
摘要： A resist film is formed on a semiconductor substrate by using a chemical amplification resist which generates an acid (or base) in response to the radiation of KrF excimer laser light and which reacts with the acid (base). If the resist film is irradiated with the KrF excimer laser light through a mask, the acid (base) is generated in the surface of an exposed portion of the resist film, so that the surface of the exposed portion is made hydrophilic by the acid (base). If water vapor is supplied to the surface of the resist film, water is diffused from the surface of the exposed portion into a deep portion. If vapor of e.g. methyltriethoxysilane is sprayed onto the surface of the resist film in air at a relative humidity of 95%, an oxide film with a sufficiently large thickness is selectively formed on the surface of the exposed portion.
-
公开(公告)号：EP0665470B1
公开(公告)日：2000-08-02
申请号：EP95100633.7
申请日：1995-01-18
CPC分类号： G03F7/16 , G03F7/085 , G03F7/11 , Y10S438/949
-
公开(公告)号：EP0883163A2
公开(公告)日：1998-12-09
申请号：EP98112004.1
申请日：1995-06-30
IPC分类号： H01L21/027 , G03F7/26
CPC分类号： G03F7/322 , G03F7/265 , G03F7/32 , H01L21/0271 , H01L21/0274 , H01L21/0275 , H01L21/0337
摘要： A resist film is formed on a semiconductor substrate by using a chemical amplification resist which generates a base in response to the radiation of KrF excimer laser light and which reacts with the base. If the resist film is irradiated with the KrF excimer laser light through a mask, the base is generated in the surface of an exposed portion of the resist film, so that the surface of the exposed portion is made hydrophilic by the base. If water vapor is supplied to the surface of the resist film, water is diffused from the surface of the exposed portion into a deep portion. If vapor of e.g. methyltriethoxysilane is sprayed onto the surface of the resist film in air at a relative humidity of 95%, an oxide film with a sufficiently large thickness is selectively formed on the surface of the exposed portion.
摘要翻译： 通过使用化学放大抗蚀剂在半导体衬底上形成抗蚀剂膜，所述化学放大抗蚀剂响应于KrF准分子激光的辐射而产生碱，并与基底反应。 如果通过掩模用KrF准分子激光照射抗蚀剂膜，则在抗蚀剂膜的暴露部分的表面中产生基底，使得暴露部分的表面被基底亲水化。 如果将水蒸汽供应到抗蚀膜的表面，则水从暴露部分的表面扩散到深部。 如果例如蒸气。 甲基三乙氧基硅烷在相对湿度为95％的空气中被喷涂到抗蚀膜的表面上，在暴露部分的表面上选择性地形成厚度足够大的氧化物膜。
-
-
-
-
-
-
-
-
-
搜索结果
12 条记录 (耗时 0.021 秒)
