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公开(公告)号：EP0595361B1
公开(公告)日：1999-03-10
申请号：EP93117627.5
申请日：1993-10-29
CPC分类号： G03F7/0045 , G03F7/40
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公开(公告)号：EP0704762A1
公开(公告)日：1996-04-03
申请号：EP95301947.8
申请日：1995-03-23
发明人： Fumiyoshi, Urano, c/o Tokyo Kenkyusho , Takaaki, Negishi, c/o Tokyo Kenkyusho , Katsuyama, Akiko , Endo, Masayuki
IPC分类号： G03F7/004
CPC分类号： G03F7/0045 , Y10S430/11
摘要： A resist material comprising (a) a terpolymer, (b) a photoacid generator, and (c) a solvent has high light sensitivity, heat resistance, adhesiveness, resolution, etc., and is suitable for forming a pattern of rectangular shape.
摘要翻译： 抗蚀剂材料包括（a）三元共聚物，（b）光致酸发生剂和（c）溶剂，具有高的光敏性，耐热性，粘合性，分辨率等，并且适于形成矩形图案。
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公开(公告)号：EP0675410B1
公开(公告)日：1999-08-04
申请号：EP95301946.0
申请日：1995-03-23
发明人： Urano, Fumiyoshi, c/o Tokyo Kenkyusho , Yasuda, Takanori, c/o Tokyo Kenkyusho , Katsuyama, Akiko , Yamashita, Kazuhiro
CPC分类号： G03F7/091 , G03F7/0045 , G03F7/039 , Y10S430/106 , Y10S430/127 , Y10S430/128
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公开(公告)号：EP0704762B1
公开(公告)日：1999-12-15
申请号：EP95301947.8
申请日：1995-03-23
发明人： Fumiyoshi, Urano, c/o Tokyo Kenkyusho , Takaaki, Negishi, c/o Tokyo Kenkyusho , Katsuyama, Akiko , Endo, Masayuki
IPC分类号： G03F7/004
CPC分类号： G03F7/0045 , Y10S430/11
摘要： A resist material comprising (a) a terpolymer, (b) a photoacid generator, and (c) a solvent has high light sensitivity, heat resistance, adhesiveness, resolution, etc., and is suitable for forming a pattern of rectangular shape.
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公开(公告)号：EP0595361A3
公开(公告)日：1997-04-02
申请号：EP93117627.5
申请日：1993-10-29
CPC分类号： G03F7/0045 , G03F7/40
摘要： The surface of a semiconductor substrate is coated with a chemical amplification resist composed of a radiosensitive material containing, as its main component, a polymer or monomolecular compound in which at least a part of phenol hydroxyl groups are substituted by protecting groups that are easily eliminated by the action of an acid. Next, said chemical amplification resist is exposed to light or irradiated with a radioactive ray and then developed, thereby forming a resist pattern. Next, the entire surface of said resist pattern is irradiated with a radioactive ray, while maintaining the temperature of the semiconductor substrate in the range not higher than the glass transition point of said chemical amplification resist, so as to eliminate the protecting groups contained in said chemical amplification resist, thereby improving the heat resistance of said resist pattern.
摘要翻译： 半导体衬底的表面涂覆有由放射敏感材料构成的化学放大抗蚀剂，其包含作为其主要成分的聚合物或单分子化合物，其中至少部分酚羟基被保护基团取代，所述基团易于被 酸的作用。 接下来，将所述化学增幅抗蚀剂曝光或用放射线照射，然后显影，从而形成抗蚀剂图案。 接下来，在将半导体衬底的温度保持在不高于所述化学放大抗蚀剂的玻璃化转变点的范围内的状态下，用放射线照射所述抗蚀剂图案的整个表面，以消除所述抗蚀图案中包含的保护基 化学放大抗蚀剂，从而提高所述抗蚀剂图案的耐热性。
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6.发明公开Resist composition for deep ultraviolet light 失效Resistzusammensetzungfürtiefe Ultraviolettbelichtung。
公开(公告)号：EP0675410A1
公开(公告)日：1995-10-04
申请号：EP95301946.0
申请日：1995-03-23
发明人： Urano, Fumiyoshi, c/o Tokyo Kenkyusho , Yasuda, Takanori, c/o Tokyo Kenkyusho , Katsuyama, Akiko , Yamashita, Kazuhiro
CPC分类号： G03F7/091 , G03F7/0045 , G03F7/039 , Y10S430/106 , Y10S430/127 , Y10S430/128
摘要： A resist composition for deep ultraviolet light comprising (a) one of the following resin components (i)-(iii): (i) a resin which becomes alkali-soluble by eliminating protective groups by the action of an acid, (ii) a combination of an alkali-soluble resin and a dissolution-inhibiting compound, and (iii) a combination of an alkali-soluble resin and a crosslinkable compound, (b) an acid generater, (c) a special anthracene derivative, and (d) a solvent, is suitable for forming a pattern using deep ultraviolet light, KrF excimer laser light, etc., on a highly reflective substrate having level differences due to absorption of undesirable reflected deep ultraviolet light.
摘要翻译： 一种深紫外光的抗蚀剂组合物，其特征在于，含有（a）以下树脂成分（i）〜（iii）中的任一种：（i）通过酸的除去保护基而成为碱溶性的树脂，（ⅱ） 碱溶性树脂和溶解抑制性化合物的组合，（iii）碱溶性树脂和交联性化合物的组合，（b）酸产生剂，（c）特殊的蒽衍生物，（d） 溶剂适用于使用深紫外光，KrF准分子激光等在由于吸收不期望的反射深紫外光而具有水平差的高反射性基板上形成图案。
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7.发明公开
公开(公告)号：EP0595361A2
公开(公告)日：1994-05-04
申请号：EP93117627.5
申请日：1993-10-29
CPC分类号： G03F7/0045 , G03F7/40
摘要： The surface of a semiconductor substrate is coated with a chemical amplification resist composed of a radiosensitive material containing, as its main component, a polymer or monomolecular compound in which at least a part of phenol hydroxyl groups are substituted by protecting groups that are easily eliminated by the action of an acid. Next, said chemical amplification resist is exposed to light or irradiated with a radioactive ray and then developed, thereby forming a resist pattern. Next, the entire surface of said resist pattern is irradiated with a radioactive ray, while maintaining the temperature of the semiconductor substrate in the range not higher than the glass transition point of said chemical amplification resist, so as to eliminate the protecting groups contained in said chemical amplification resist, thereby improving the heat resistance of said resist pattern.
摘要翻译： 半导体衬底的表面涂覆有由放射敏感材料构成的化学放大抗蚀剂，其包含作为其主要成分的聚合物或单分子化合物，其中至少部分酚羟基被保护基团取代，所述基团易于被 酸的作用。 接下来，将所述化学增幅抗蚀剂曝光或用放射线照射，然后显影，从而形成抗蚀剂图案。 接下来，在将半导体衬底的温度保持在不高于所述化学放大抗蚀剂的玻璃化转变点的范围内的状态下，用放射线照射所述抗蚀剂图案的整个表面，以消除所述抗蚀图案中包含的保护基 化学放大抗蚀剂，从而提高所述抗蚀剂图案的耐热性。
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8.发明公开Resist composition containing specific cross-linking agent 失效Spezifisches Vernetzungsmittel enthaltende Resistzusammensetzung
公开(公告)号：EP0887706A1
公开(公告)日：1998-12-30
申请号：EP98304859.6
申请日：1998-06-19
IPC分类号： G03F7/038
CPC分类号： G03F7/038 , G03F7/0045
摘要： A resist composition comprising an alkalisoluble polymer, a special cross-linking agent containing one or more oxirane rings and at least one of -0-, -CO-, -COO- and -OCO- groups in the molecule, a photoacid generator, and a solvent can form a film having high transmittance for deep UV light such as ArF excimer laser beams and high etching resistance as well as high resolution, and thus suitable for forming a negative working pattern.
摘要翻译： 一种抗蚀剂组合物，其包含可溶性聚合物，分子中含有一个或多个环氧乙烷环和至少一个-O-，-CO-，-COO-和-OCO-基团的特殊交联剂，光酸产生剂和 溶剂可以形成对于诸如ArF准分子激光束的深紫外光具有高透射率的膜和高抗蚀刻性以及高分辨率，因此适合于形成负作用图案。
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9.发明公开Pattern formation method and surface treating agent 失效Bilderzeugungsverfahren undOberflächenbehandlungsmittel
公开(公告)号：EP0757290A2
公开(公告)日：1997-02-05
申请号：EP96112569.7
申请日：1996-08-02
IPC分类号： G03F7/075
CPC分类号： G03F7/0751
摘要： To the surface of a semiconductor substrate made of silicon, isopropenoxytrimethylsilane is supplied as a surface treating agent to render the surface of the semiconductor substrate hydrophobic and increase adhesion to the semiconductor substrate. Thus, Si(CH 3 ) 3 (trimethylsilyl group) is substituted for the hydrogen atom of an OH group on the surface of the semiconductor substrate, resulting in (CH 3 ) 2 CO (acetone). Subsequently, a chemically amplified resist is applied to the surface of the semiconductor substrate and exposed to light by using a desired mask, followed sequentially by PEB and development for forming a pattern. Since the surface treating agent does not generate ammonia, there can be formed a pattern in excellent configuration with no insoluble skin layer formed thereon.
摘要翻译： 向由硅制成的半导体衬底的表面提供异丙烯氧基三甲基硅烷作为表面处理剂，使半导体衬底的表面疏水化并增加对半导体衬底的粘合性。 因此，Si（CH 3）3（三甲基甲硅烷基）取代了半导体衬底表面上的OH基的氢原子，得到（CH 3）2 CO（丙酮）。 随后，通过使用所需的掩模将化学放大型抗蚀剂施加到半导体衬底的表面并暴露于光，然后依次由PEB和显影形成图案。 由于表面处理剂不产生氨，因此可以形成具有优异构型的图案，其上不形成不溶性表皮层。
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公开(公告)号：EP0665470A3
公开(公告)日：1996-04-03
申请号：EP95100633.7
申请日：1995-01-18
CPC分类号： G03F7/16 , G03F7/085 , G03F7/11 , Y10S438/949
摘要： An acid solution is fed onto a TiN film formed on a semiconductor substrate. So, the TiN film is dipped into the acid solution, whereupon the surface of the semiconductor substrate is neutralized or is made less basic. Then, a chemically amplified resist, containing an acid generator which produces an acid when irradiated with radiant rays and a compound reactive to acids, is applied to the semiconductor substrate, to form a resist film. This is followed by a step for sending radiant rays upon the resist film to expose it. Then, the exposed resist pattern is developed to form a resist pattern without footing or scumming and under-cutting.
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