CMOS PRESSURE SENSOR WITH GETTER USING TI-W WIRE EMBEDDED IN MEMBRANE
    3.
    发明公开
    CMOS PRESSURE SENSOR WITH GETTER USING TI-W WIRE EMBEDDED IN MEMBRANE 审中-公开
    具有吸气口的CMOS压力传感器,使用嵌入膜中的TI-W线

    公开(公告)号:EP3172547A1

    公开(公告)日:2017-05-31

    申请号:EP15738946.1

    申请日:2015-07-23

    摘要: Various exemplary embodiments relate to a pressure sensor including a pressure sensitive membrane suspended over a cavity, wherein the membrane is secured by a set of anchors to a substrate; and a getter material embedded in the membrane, wherein the surface of the getter is in contact with any gas within the cavity, and wherein two end points of the getter material are attached through the substrate by anchors capable of conducting through the substrate an electrical current through the getter material.

    摘要翻译: 各种示例性实施例涉及一种压力传感器,该压力传感器包括悬置在空腔上的压力敏感膜,其中该膜通过一组锚固件固定到衬底; 以及嵌入膜中的吸气剂材料,其中吸气剂的表面与空腔内的任何气体接触,并且其中吸气剂材料的两个端点通过基板通过能够穿过基板传导的锚固件附着电流 通过吸气材料。

    SUSPENDED MEMBRANE FOR CAPACITIVE PRESSURE SENSOR
    4.
    发明公开
    SUSPENDED MEMBRANE FOR CAPACITIVE PRESSURE SENSOR 有权
    用于电容式压力传感器的悬浮膜

    公开(公告)号:EP3174825A1

    公开(公告)日:2017-06-07

    申请号:EP15739302.6

    申请日:2015-07-24

    IPC分类号: B81C1/00 G01L9/00

    摘要: Embodiments of a method for forming a suspended membrane include depositing a first electrically conductive material above a sacrificial layer and within a boundary trench. The first electrically conductive material forms a corner transition portion above the boundary trench. The method further includes removing a portion of the first electrically conductive material that removes at least a portion of uneven topography of the first electrically conductive material. The method further includes depositing a second electrically conductive material. The second electrically conductive material extends beyond the boundary trench. The method further includes removing the sacrificial layer through etch openings and forming a cavity below the second electrically conductive material. The first electrically conductive material defines a portion of a sidewall boundary of the cavity.

    摘要翻译: 用于形成悬浮膜的方法的实施例包括在牺牲层上方和边界沟槽内沉积第一导电材料。 第一导电材料在边界沟槽上方形成拐角过渡部分。 该方法还包括去除去除第一导电材料的不平坦形貌的至少一部分的第一导电材料的一部分。 该方法还包括沉积第二导电材料。 第二导电材料延伸超过边界沟槽。 该方法还包括通过蚀刻开口去除牺牲层并在第二导电材料下方形成空腔。 第一导电材料限定了空腔的侧壁边界的一部分。