公开(公告)号：EP2401224A1

公开(公告)日：2012-01-04

申请号：EP10710083.6

申请日：2010-02-24

Applicant: Universite Des Sciences Et Technologies De Lille

Inventor： ABBAS, Abdennour ,  GUILLOCHON, Didier ,  BOCQUET, Bertrand ,  SUPIOT, Philippe

IPC: B81C1/00

CPC classification number: B81C1/00071 ,  B81B2201/0214 ,  B81B2201/058 ,  B81B2203/0338 ,  B81C2201/0108 ,  B81C2201/018

Abstract: The invention relates to a method for making microchannels on a substrate, and to a substrate including such microchannels, which can particularly be used in the production of microstructured substrates for microelectronic, microfluidic and/or micromechanical systems. The method includes a step of (a) making at least one or at least two patterns (2) on the surface of a lower layer (1), and a step (b) of depositing, onto the lower layer and the pattern(s), a layer (3) of a polymer material produced by polymerisation in an optionally remote plasma-enhanced chemical vapour deposition reactor (PECVD, optionally RPECVD) of an organic or organometallic monomer with siloxane functions, e.g. tetramethyldisiloxane. The layer of polymer material is deposited so as to create, in the place of the pattern and after the decomposition of said pattern, or between two patterns without development-decomposition, a channel (4a, 4b, 4c, 4d), which is closed on at least a portion of the length thereof.

公开(公告)号：EP2836456B1

公开(公告)日：2016-08-24

申请号：EP13715953.9

申请日：2013-04-08

Applicant: BOEHRINGER INGELHEIM microParts GmbH

Inventor： KADEL, Klaus

IPC: B81C1/00 ,  A61M11/02

CPC classification number: A61M11/02 ,  B81C1/00206 ,  B81C2201/0112 ,  B81C2201/018

公开(公告)号：EP2836456A1

公开(公告)日：2015-02-18

申请号：EP13715953.9

申请日：2013-04-08

Applicant: BOEHRINGER INGELHEIM microParts GmbH

Inventor： KADEL, Klaus

IPC: B81C1/00

CPC classification number: A61M11/02 ,  B81C1/00206 ,  B81C2201/0112 ,  B81C2201/018

Abstract: The invention relates to a method for producing trench-like depressions (24) in the surface of a wafer (27), in particular a silicon wafer, by means of plasma etching, said depressions (24) being produced by alternating between a passivating and an etching process. A polytetrafluoroethylene-like protective layer (30) is provided for each depression (24) in its final shape.

公开(公告)号：EP1988566A2

公开(公告)日：2008-11-05

申请号：EP08354025.2

申请日：2008-04-28

Applicant: Commissariat à l'Energie Atomique

Inventor： Gaillard, Frédéric-Xavier ,  VanDroux, Laurent

IPC: H01L21/033 ,  H01L21/768 ,  H01L21/308

CPC classification number: H01L21/0337 ,  B01D67/0034 ,  B01D2325/08 ,  B81B2203/0315 ,  B81B2203/0338 ,  B81C1/00031 ,  B81C2201/018 ,  H01L21/3086 ,  H01L21/7682

Abstract: Des sites de polymère sont formés sur un support (2). Ces sites sont soumis à un plasma de dépôt de matériau diélectrique (3) et réagissent préférentiellement avec ce plasma de manière à former des ouvertures (6) au niveau desdits sites. Un réseau de motifs est alors formé dans le matériau diélectrique (3) et/ou dans le polymère (4).

公开(公告)号：EP1208002A4

公开(公告)日：2006-08-02

申请号：EP00939410

申请日：2000-05-30

Applicant: PENN STATE RES FOUND

Inventor： FONASH STEPHEN J ,  KALKAN ALI KAAN ,  BAE SANGHOON

IPC: B81B3/00 ,  B81C1/00 ,  C23C16/24 ,  C23C16/511 ,  G01N21/17 ,  G01N27/12 ,  G01N27/447 ,  H01J49/04 ,  H01J49/16 ,  B32B3/10 ,  C23C10/06 ,  C23C16/06 ,  H05H1/02

CPC classification number: B81C1/0038 ,  B81C1/00047 ,  B81C2201/0115 ,  B81C2201/0139 ,  B81C2201/018 ,  C23C16/24 ,  C23C16/511 ,  G01N21/17 ,  G01N27/121 ,  G01N27/44717 ,  G01N30/6095 ,  H01J49/0418 ,  Y10T428/24174 ,  Y10T428/249953

Abstract: A novel porous film is disclosed comprising a network of silicon columns in a continuous void which may be fabricated using high density plasma deposition at low temperatures, i.e., less than about 250 ° C. This silicon film is a two-dimensional nano-sized array of rodlike columns. This void-column morphology can be controlled with deposition conditions and the porosity can be varied up to 90%. The simultaneous use of low temperature deposition and etching in the plasma approach utilized, allows for the unique opportunity of obtaining columnar structure, a continuous void, and polycrystalline column composition at the same time. Unique devices may be fabricated using this porous continuous film by plasma deposition of this film on a glass, metal foil, insulator or plastic substrates.

Abstract translation: 公开了一种新颖的多孔膜，其包括在连续空隙中的硅柱网络，其可以在低温即低于约250℃下使用高密度等离子体沉积来制造。该硅膜是二维纳米尺寸阵列 的棒状柱。 这种空隙柱形态可以用沉积条件控制，并且孔隙度可以变化高达90％。 在所采用的等离子体方法中同时使用低温沉积和蚀刻允许在同时获得柱状结构，连续空隙和多晶柱组成的独特机会。 可以使用该多孔连续膜通过将该膜等离子体沉积在玻璃，金属箔，绝缘体或塑料基底上来制造独特的器件。

公开(公告)号：EP1988566B1

公开(公告)日：2017-08-02

申请号：EP08354025.2

申请日：2008-04-28

Applicant: Commissariat à l'Énergie Atomique et aux Énergies Alternatives

Inventor： Gaillard, Frédéric-Xavier ,  VanDroux, Laurent

IPC: H01L21/033 ,  H01L21/308 ,  H01L21/768 ,  B01D67/00 ,  B81C1/00

CPC classification number: H01L21/0337 ,  B01D67/0034 ,  B01D2325/08 ,  B81B2203/0315 ,  B81B2203/0338 ,  B81C1/00031 ,  B81C2201/018 ,  H01L21/3086 ,  H01L21/7682

公开(公告)号：EP2401224B1

公开(公告)日：2012-08-22

申请号：EP10710083.6

申请日：2010-02-24

Applicant: Universite Des Sciences Et Technologies De Lille

Inventor： ABBAS, Abdennour ,  GUILLOCHON, Didier ,  BOCQUET, Bertrand ,  SUPIOT, Philippe

IPC: B81C1/00

CPC classification number: B81C1/00071 ,  B81B2201/0214 ,  B81B2201/058 ,  B81B2203/0338 ,  B81C2201/0108 ,  B81C2201/018

Abstract: The invention relates to a method for making microchannels on a substrate, and to a substrate including such microchannels, which can particularly be used in the production of microstructured substrates for microelectronic, microfluidic and/or micromechanical systems. The method includes a step of (a) making at least one or at least two patterns (2) on the surface of a lower layer (1), and a step (b) of depositing, onto the lower layer and the pattern(s), a layer (3) of a polymer material produced by polymerisation in an optionally remote plasma-enhanced chemical vapour deposition reactor (PECVD, optionally RPECVD) of an organic or organometallic monomer with siloxane functions, e.g. tetramethyldisiloxane. The layer of polymer material is deposited so as to create, in the place of the pattern and after the decomposition of said pattern, or between two patterns without development-decomposition, a channel (4a, 4b, 4c, 4d), which is closed on at least a portion of the length thereof.

Abstract translation: 本发明涉及一种用于在基底上制造微通道的方法，并且涉及一种包括这种微通道的基底，其特别可以用于微电子，微流体和/或微机械系统的微结构基底的生产。 该方法包括以下步骤：（a）在下层（1）的表面上制作至少一个或至少两个图案（2）;以及步骤（b），在下层和图案上 ），通过在具有硅氧烷官能团的有机或有机金属单体的任选远程等离子体增强化学气相沉积反应器（PECVD，任选RPECVD）中聚合产生的聚合物材料层（3），例如 四甲基二硅氧烷。 沉积聚合物材料层以便在图案的位置中和在所述图案分解之后或在没有显影分解的两个图案之间产生通道（4a，4b，4c，4d），所述通道（4a，4b，4c，4d） 在其至少一部分长度上。

公开(公告)号：EP1988566A3

公开(公告)日：2010-08-04

申请号：EP08354025.2

申请日：2008-04-28

Applicant: Commissariat à l'Énergie Atomique et aux Énergies Alternatives

Inventor： Gaillard, Frédéric-Xavier ,  VanDroux, Laurent

IPC: H01L21/033 ,  H01L21/308 ,  H01L21/768 ,  B01D67/00 ,  B81C1/00

CPC classification number: H01L21/0337 ,  B01D67/0034 ,  B01D2325/08 ,  B81B2203/0315 ,  B81B2203/0338 ,  B81C1/00031 ,  B81C2201/018 ,  H01L21/3086 ,  H01L21/7682

Abstract: Des sites de polymère sont formés sur un support (2). Ces sites sont soumis à un plasma de dépôt de matériau diélectrique (3) et réagissent préférentiellement avec ce plasma de manière à former des ouvertures (6) au niveau desdits sites. Un réseau de motifs est alors formé dans le matériau diélectrique (3) et/ou dans le polymère (4).

Abstract translation: 使用沉积在载体（2）上的聚合物（4）制备图案结构的方法包括通过在载体上沉积聚合物聚集体，然后通过等离子体沉积介电材料（3），连续形成与预定等离子体反应的聚合物部位 在位置的水平面上形成开口（6）。 聚合物聚集体的沉积对应于所需的图案结构。 聚合物位置包括具有与聚合物表面的其余部分粗糙度不同的区域，或者与平均总组合物相比具有不同化学计量的区域。

公开(公告)号：EP1208002A1

公开(公告)日：2002-05-29

申请号：EP00939410.7

申请日：2000-05-30

Applicant: THE PENN STATE RESEARCH FOUNDATION

Inventor： FONASH, Stephen, J. ,  KALKAN, Ali, Kaan ,  BAE, Sanghoon

IPC: B32B3/10 ,  C23C10/06 ,  C23C16/06 ,  H05H1/02

CPC classification number: B81C1/0038 ,  B81C1/00047 ,  B81C2201/0115 ,  B81C2201/0139 ,  B81C2201/018 ,  C23C16/24 ,  C23C16/511 ,  G01N21/17 ,  G01N27/121 ,  G01N27/44717 ,  G01N30/6095 ,  H01J49/0418 ,  Y10T428/24174 ,  Y10T428/249953

Abstract: A novel porous film is disclosed comprising a network of silicon columns in a continuous void which may be fabricated using high density plasma deposition at low temperatures, i.e., less than about 250 ° C. This silicon film is a two-dimensional nano-sized array of rodlike columns. This void-column morphology can be controlled with deposition conditions and the porosity can be varied up to 90%. The simultaneous use of low temperature deposition and etching in the plasma approach utilized, allows for the unique opportunity of obtaining columnar structure, a continuous void, and polycrystalline column composition at the same time. Unique devices may be fabricated using this porous continuous film by plasma deposition of this film on a glass, metal foil, insulator or plastic substrates.