利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

13 条记录 (耗时 0.009 秒)

    RESISTLOSES LITHOGRAPHIEVERFAHREN ZUR HERSTELLUNG FEINER STRUKTUREN
    1.
    发明授权
    RESISTLOSES LITHOGRAPHIEVERFAHREN ZUR HERSTELLUNG FEINER STRUKTUREN 有权
    耐磨石灰石UNG EN EN EN EN EN EN EN EN EN EN EN EN EN EN EN EN EN EN EN EN EN EN EN

    公开(公告)号：EP1456870B1

    公开(公告)日：2005-07-20

    申请号：EP02791623.8

    申请日：2002-12-10

    申请人： Infineon Technologies AG

    发明人： TEWS, Helmut ,  FEHLHABER, Rodger

    IPC分类号： H01L21/033 ,  H01L21/308 ,  G03F1/00 ,  H01L21/3213 ,  H01L21/311 ,  H01L21/265 ,  B81C1/00

    CPC分类号： B81C1/00396 ,  G03F1/50 ,  G03F7/2045 ,  G03F7/2065 ,  H01L21/0332 ,  H01L21/0337 ,  H01L21/2652 ,  H01L21/3086 ,  H01L21/32139

    摘要： The invention relates to a resistless lithography method for producing fine structures. According to said method, a semiconductor mask layer (HM) is formed on a carrier material (TM, HM'), and a selective ion implantation (I) is carried out in order to dope selected regions (1) of the semiconductor mask layer (HM). A semiconductor mask which can be used for further structuring is obtained by removing the non-doped regions of the semiconductor mask layer (HM) by means of a wet-chemical process. The invention thus provides a simple and highly precise resistless lithography method for producing structures smaller than 100 nm.

    摘要翻译： 公开了一种用于制造精细结构的抗蚀刻光刻方法。 在一个实施例中，可以在载体材料（TM，HM'）和选择性离子注入（I）上形成半导体掩模层（HM），以便掺杂半导体掩模层（HM）的选定区域（1） ）。 半导体掩模层（HM）的非掺杂区域的湿化学去除产生可用于进一步图案化的半导体掩模。 以这种方式获得用于小于100nm的结构的简单且高精度的无电阻光刻方法。

    A METHOD AND AN APPARATUS FOR ILLUMINATING POINTS ON A MEDIUM
    3.
    发明公开
    A METHOD AND AN APPARATUS FOR ILLUMINATING POINTS ON A MEDIUM 失效
    方法和设备点在的车用照明。

    公开(公告)号：EP0642423A1

    公开(公告)日：1995-03-15

    申请号：EP93912665.0

    申请日：1993-05-25

    申请人： PURUP PREPRESS A/S

    发明人： BUUS, Niels

    IPC分类号： B41J13 ,  B43L13 ,  B65H5 ,  B65H7 ,  B65H23 ,  G03B27 ,  G03B41 ,  G03F1 ,  G03F7 ,  H04N1

    CPC分类号： G03F7/7035 ,  B65H5/062 ,  B65H5/228 ,  B65H7/14 ,  B65H23/24 ,  B65H2301/4452 ,  B65H2511/20 ,  B65H2511/22 ,  B65H2511/512 ,  B65H2515/212 ,  B65H2515/342 ,  B65H2515/60 ,  B65H2553/41 ,  B65H2553/416 ,  G03F7/2002 ,  G03F7/2045 ,  G03F7/70716 ,  H04N1/036 ,  H04N1/08 ,  B65H2220/01 ,  B65H2220/03 ,  B65H2220/02

    摘要： An apparatus for the illumination of points on a medium comprises a perforated wall which is illuminated by substantially collimated optical energy at a centre wavelength (μ). The optical energy passes through the perforations and illuminates the medium which is arranged at a distance (L) therefrom. The perforations have a cross section such that the optical energy is diffracted, and diverging bundles of rays are created. The medium is located in a region around the transition between the Fresnel region and the Fraunhofer region of the bundles of rays. Points on the surface of the medium are illuminated selectively by a source of light through a large number of illumination channels. Each of these channels comprises an optical lens element for intensifying the optical energy received from the light source, a selectively controlled optical valve permitting or preventing optical energy from propagating through the channel, and a channel outlet which, together with the other elements in the means, defines the size of the point formed by the channel. The channels are controlled individually by the central control unit, which is electrically connected to each of the selectively controlled optical valves for selective control of the energy transmission of each channel.

    摘要翻译： PCT号 PCT / DK93 / 00180秒。 371日期1994年11月28日二段。 102（e）中的日期1994年11月28日提交的PCT 1993年5月25日的PCT公布。 号 WO93 / 24327的PCT公布。 日期十二月 9，通过照射穿孔的多元性1993年a的方法和装置为点的介质上的照明并与具有中心波长λ轻布置成平行于平台。 所述穿孔具有的横截面，以便提供用于每个穿孔由defracting的光形成光线的发散束。 将培养基从穿孔在菲涅耳区域和Fraunhofer区域之间的光线的发散束的大致过渡的位置。

    A METHOD AND AN APPARATUS FOR ILLUMINATING POINTS ON A MEDIUM
    8.
    发明授权
    A METHOD AND AN APPARATUS FOR ILLUMINATING POINTS ON A MEDIUM 失效
    方法和设备点在载体照明

    公开(公告)号：EP0642423B1

    公开(公告)日：1996-10-09

    申请号：EP93912665.2

    申请日：1993-05-25

    申请人： DICON A/S

    发明人： BUUS, Niels

    IPC分类号： B41B19/00 ,  B41B21/32 ,  G03F7/20 ,  H04N1/036

    CPC分类号： G03F7/7035 ,  B65H5/062 ,  B65H5/228 ,  B65H7/14 ,  B65H23/24 ,  B65H2301/4452 ,  B65H2511/20 ,  B65H2511/22 ,  B65H2511/512 ,  B65H2515/212 ,  B65H2515/342 ,  B65H2515/60 ,  B65H2553/41 ,  B65H2553/416 ,  G03F7/2002 ,  G03F7/2045 ,  G03F7/70716 ,  H04N1/036 ,  H04N1/08 ,  B65H2220/01 ,  B65H2220/03 ,  B65H2220/02

    摘要： An apparatus for the illumination of points on a medium comprises a perforated wall which is illuminated by substantially collimated optical energy at a centre wavelength (μ). The optical energy passes through the perforations and illuminates the medium which is arranged at a distance (L) therefrom. The perforations have a cross section such that the optical energy is diffracted, and diverging bundles of rays are created. The medium is located in a region around the transition between the Fresnel region and the Fraunhofer region of the bundles of rays. Points on the surface of the medium are illuminated selectively by a source of light through a large number of illumination channels. Each of these channels comprises an optical lens element for intensifying the optical energy received from the light source, a selectively controlled optical valve permitting or preventing optical energy from propagating through the channel, and a channel outlet which, together with the other elements in the means, defines the size of the point formed by the channel. The channels are controlled individually by the central control unit, which is electrically connected to each of the selectively controlled optical valves for selective control of the energy transmission of each channel.

    摘要翻译： PCT号 PCT / DK93 / 00180秒。 371日期1994年11月28日二段。 102（e）中的日期1994年11月28日提交的PCT 1993年5月25日的PCT公布。 号 WO93 / 24327的PCT公布。 日期十二月 9，通过照射穿孔的多元性1993年a的方法和装置为点的介质上的照明并与具有中心波长λ轻布置成平行于平台。 所述穿孔具有的横截面，以便提供用于每个穿孔由defracting的光形成光线的发散束。 将培养基从穿孔在菲涅耳区域和Fraunhofer区域之间的光线的发散束的大致过渡的位置。

    METHOD OF FORMING A DESIRED PATTERN ON A SUBSTRATE
    10.
    发明公开
    METHOD OF FORMING A DESIRED PATTERN ON A SUBSTRATE 审中-公开
    VERFAHREN ZUR BILDUNG EINESGEWÜNSCHTENMUSTERS AUF EINEM SUBSTRAT

    公开(公告)号：EP3025194A1

    公开(公告)日：2016-06-01

    申请号：EP14742345.3

    申请日：2014-07-21

    申请人： Bergen Teknologioverføring AS

    发明人： HOLST, Bodil

    IPC分类号： G03F1/00 ,  G03F1/20 ,  G03F7/20

    CPC分类号： G03F7/2037 ,  G03F1/20 ,  G03F7/2045 ,  G03H1/0891 ,  G03H5/00 ,  G03H2001/0094 ,  G03H2001/2234

    摘要： The present invention relates to a method of forming a desired pattern on a substrate comprising the steps of a) generating an atomic or molecular beam, in particular a beam of He atoms; b) providing a mask having a desired pattern such as a Fourier transform of the desired pattern on the substrate; c) directing the atomic or molecular beam through the patterned mask onto a substrate, whereby a pattern is formed on the substrate by interaction with the proportion of the atomic or molecular beam which penetrates through the mask, which pattern is based on the pattern of the mask, wherein the patterned mask is prepared by a method comprising d) providing a porous starting mask material having openings of a size which allow the atomic or molecular beam to penetrate through; e) creating the desired pattern on the mask by filling a proportion of the openings of the mask which thereby become non-transparent for the atomic or molecular beam. The method of the present invention is useful for preparing conducting circuit structures (micro-chips) or microelectromechanical systems (MEMS) or structures for micro/nano fluidics or nanostructured surfaces in general, ie. hydrophobic or hydrophilic surfaces or reflective/antireflective surfaces.

    摘要翻译： 本发明涉及一种在衬底上形成所需图案的方法，包括以下步骤：a）产生原子或分子束，特别是产生He原子束; b）提供具有期望图案的掩模，例如在基板上的期望图案的傅里叶变换; c）将原子或分子束引导通过图案化掩模到衬底上，由此通过与穿透掩模的原子或分子束的比例相互作用而在衬底上形成图案，该图案基于图案 掩模，其中所述图案化掩模通过以下方法制备：d）提供具有允许原子或分子束穿透的尺寸的开口的多孔起始掩模材料; e）通过填充掩模的一部分开口，从而对原子或分子束变得不透明，在掩模上产生所需的图案。 本发明的方法可用于制备一般的微/纳米流体或微结构表面的导电电路结构（微芯片）或微机电系统（MEMS）或结构。 疏水或亲水表面或反射/抗反射表面。