利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

28 条记录 (耗时 0.01 秒)

    FILM THICKNESS MEASUREMENT USING ELECTRON-BEAM INDUCED X-RAY MICROANALYSIS
    2.
    发明公开
    FILM THICKNESS MEASUREMENT USING ELECTRON-BEAM INDUCED X-RAY MICROANALYSIS 审中-公开
    测量电子诱导X射线显微分析的厚度

    公开(公告)号：EP1305815A1

    公开(公告)日：2003-05-02

    申请号：EP01944398.5

    申请日：2001-06-07

    申请人： KLA-Tencor Corporation

    发明人： LEE, Shing, M.

    IPC分类号： H01J37/244 ,  H01J37/252 ,  G01N23/22

    CPC分类号： G01B15/02 ,  G01N23/22 ,  H01J37/252 ,  H01J2237/24415 ,  H01J2237/2814

    摘要： An X-ray microanalysis test system comprising a beam generator (400), which induces X-rays to emanate from a semiconductor device containing film stacks. The charged particle beam will penetrate at least two layers of a film stack (330) on a semiconductor device so that these layers may be tested. The X-rays will be detected using multiple X-ray detectors (500) that detect X-ray photons having a specific energy level. The X-rays will then be used to analyze the characteristics of the semiconductor device. Each of the multiple X-ray detectors (500) may be wavelength dispersive system (WDS) detectors. The present invention also provides a method for measuring film stack characteristics on a semiconductor device. The method for measuring includes directing an electron beam towards the semiconductor device so that the electron beam penetrates at least a conductive film layer and a liner layer, detecting the X-rays which are caused to emanate from the device with multiple X-ray detectors that detect X-ray photons having a specific energy level. The present invention also provides a method and a computer-readable medium, which determines a film stack's properties using the data collected with the test system of the present invention. The method and computer-readable medium includes selecting a set of values which estimate the film stack characteristics.

    Silicon drift X-ray detector
    3.
    发明公开
    Silicon drift X-ray detector 有权
    硅漂移，Röntgendetektor

    公开(公告)号：EP2202775A3

    公开(公告)日：2012-05-09

    申请号：EP09252804.1

    申请日：2009-12-16

    申请人： JEOL Ltd.

    发明人： Watanabe, Toshiyoshi ,  Miyatake, Kouji

    IPC分类号： H01J37/244 ,  H01J37/252 ,  G01T1/36 ,  H01L31/00

    CPC分类号： H01J37/244 ,  G01T1/2928 ,  H01J37/252 ,  H01J2237/24415 ,  H01L31/115

    摘要： A silicon drift detector used in an energy-dispersive X-ray spectrometer and having a background lower than heretofore. The detector has an X-ray detection device (1), an electrode terminal subassembly (2) for electrical connection, a Peltier device (3), and first and second shields (5,6) formed between the electrode terminal subassembly (2) and the Peltier device (3). The first shield (5) is made of a material consisting chiefly of an element having an atomic number smaller than the average atomic number of the elements included in the material of the Peltier device (3). The second shield (6) is made of a material consisting chiefly of an element having an atomic number greater than the atomic numbers of the elements included in the material of the Peltier device (3). The shields (5, 6) reduce the amount of secondary X-rays entering the X-ray detection device (1) after being produced from the Peltier device (3), the secondary X-rays being induced by X-rays transmitted through the detection device (1).

    X-Ray detector and charged-particle trap
    4.
    发明公开
    X-Ray detector and charged-particle trap 审中-公开
    Röntgendetektorund Abscheiderfürgeladene Teilchen

    公开(公告)号：EP1227315A2

    公开(公告)日：2002-07-31

    申请号：EP01130203.1

    申请日：2001-12-18

    申请人： Hitachi, Ltd.

    发明人： Ochiai, Isao, Hitachi Ltd., Intell. Prop. Group ,  Shinada, Hiroyuki, Hitachi Ltd., Intell Prop Group ,  Kanda, Kimio, Hitachi Ltd., Intell. Prop. Group

    IPC分类号： G01N23/00

    CPC分类号： H01J37/244 ,  G01N23/225 ,  H01J37/256 ,  H01J37/28 ,  H01J2237/028 ,  H01J2237/24415 ,  H01J2237/2445

    摘要： In a high-sensitivity X-ray detector, an image of the secondary electrons is little shifted and deformed by the astigmatism or the like even when it approaches very close to a specimen (9) set on the stage (235) of an electron microscope. When a beam of charged particles strike a specimen (9), the specimen emits backscattered charged particles along with X-rays. To prevent such undesired charged particles from entering into the X-ray detecting element of the X-ray detector, a means (261, 262) for generating a first magnetic field is applied. Another means (263, 265) for generating a second magnetic field is provided to cancel the magnetic field leaked from the first means for generating magnetic field at the position of the specimen (9).

    摘要翻译： 在高灵敏度X射线检测器中，即使当二次电子接近非常靠近设置在电子显微镜的台（235）上的试样（9）时，二次电子的图像几何偏移和变形， 。 当带电粒子束撞击样品（9）时，样品与X射线一起发射反向散射的带电粒子。 为了防止这种不期望的带电粒子进入X射线检测器的X射线检测元件，施加用于产生第一磁场的装置（261,262）。 提供了用于产生第二磁场的另一装置（263,265），以抵消从第一装置泄漏的磁场，用于在试样（9）的位置产生磁场。

    ELECTRON MICROSCOPE
    6.
    发明授权
    ELECTRON MICROSCOPE 有权

    公开(公告)号：EP2511937B1

    公开(公告)日：2018-04-11

    申请号：EP10835635.3

    申请日：2010-10-25

    申请人： Hitachi High-Technologies Corporation

    发明人： KAJI, Kazutoshi

    IPC分类号： H01J37/244 ,  G01N23/225 ,  H01J37/22 ,  H01J37/24 ,  H01J37/28 ,  G01N23/04 ,  H01J37/26

    CPC分类号： H01J37/244 ,  G01N23/04 ,  G01N2223/102 ,  G01N2223/3037 ,  H01J37/26 ,  H01J2237/24415 ,  H01J2237/24485 ,  H01J2237/24495 ,  H01J2237/28

    摘要： An object of the present invention relates to measurement of a quantitative element image with a high S/N ratio and measurement of an electron energy loss spectrum with high energy precision and energy resolution. The present invention relates to measurement of a characteristic X-ray spectrum obtained by correcting dead time due to excessive X rays and measurement of an electron energy loss spectrum obtained by correcting energy based on a zero loss peak in the case where the characteristic X-ray spectrum and the electron energy loss spectrum are measured by irradiating one irradiation position on a sample with an electron beam for a predetermined time while scanning the surface of the sample to observe a Z-contrast image. According to the present invention, it becomes possible to measure a quantitative element image with a high S/N ratio by a characteristic X ray, an element image with a high S/N ratio by an electron energy loss spectrum and a high energy resolution spectrum.

    X-RAY ANALYSIS IN AIR
    7.
    发明公开
    X-RAY ANALYSIS IN AIR 审中-公开
    RÖNTGENANALYSE在LUFT

    公开(公告)号：EP3050072A1

    公开(公告)日：2016-08-03

    申请号：EP14781263.0

    申请日：2014-09-25

    申请人： Oxford Instruments Nanotechnology Tools Limited

    发明人： STATHAM, Peter

    IPC分类号： H01J37/244 ,  H01J37/28

    CPC分类号： H01J37/244 ,  H01J37/28 ,  H01J2237/164 ,  H01J2237/182 ,  H01J2237/188 ,  H01J2237/24415 ,  H01J2237/2445 ,  H01J2237/2608

    摘要： An x-ray analysis apparatus comprises an electron beam assembly for generating a focused electron beam within a first gas pressure environment. A sample assembly is used for retaining a sample within a second gas pressure environment such that the sample receives the electron beam from the electron beam assembly and such that the gas pressure in the second gas pressure environment is greater than the gas pressure within the first gas pressure environment. An x-ray detector is positioned so as to have at least one x-ray sensor element within the first gas pressure environment. The sensor element is mounted to a part of the electron beam assembly which is proximal to the sample assembly and further arranged in use to receive x-rays generated by the interaction between the electron beam and the sample.

    摘要翻译： X射线分析装置包括用于在第一气体压力环境内产生聚焦电子束的电子束组件。 样品组件用于将样品保持在第二气体压力环境内，使得样品接收来自电子束组件的电子束，并且使得第二气体压力环境中的气体压力大于第一气体内的气体压力 压力环境。 x射线检测器定位成在第一气体压力环境内具有至少一个x射线传感器元件。 传感器元件安装到电子束组件的靠近样品组件的一部分，并且在使用中进一步布置以接收由电子束和样品之间的相互作用产生的x射线。

    ELECTRON MICROSCOPE
    8.
    发明公开
    ELECTRON MICROSCOPE 有权
    ELEKTRONENMIKROSKOP

    公开(公告)号：EP2511937A1

    公开(公告)日：2012-10-17

    申请号：EP10835635.3

    申请日：2010-10-25

    申请人： Hitachi High-Technologies Corporation

    发明人： KAJI, Kazutoshi

    IPC分类号： H01J37/244 ,  G01N23/225 ,  H01J37/22 ,  H01J37/24 ,  H01J37/28

    CPC分类号： H01J37/244 ,  G01N23/04 ,  G01N2223/102 ,  G01N2223/3037 ,  H01J37/26 ,  H01J2237/24415 ,  H01J2237/24485 ,  H01J2237/24495 ,  H01J2237/28

    摘要： An object of the present invention relates to measurement of a quantitative element image with a high S/N ratio and measurement of an electron energy loss spectrum with high energy precision and energy resolution. The present invention relates to measurement of a characteristic X-ray spectrum obtained by correcting dead time due to excessive X rays and measurement of an electron energy loss spectrum obtained by correcting energy based on a zero loss peak in the case where the characteristic X-ray spectrum and the electron energy loss spectrum are measured by irradiating one irradiation position on a sample with an electron beam for a predetermined time while scanning the surface of the sample to observe a Z-contrast image. According to the present invention, it becomes possible to measure a quantitative element image with a high S/N ratio by a characteristic X ray, an element image with a high S/N ratio by an electron energy loss spectrum and a high energy resolution spectrum.

    摘要翻译： 本发明的目的是测量具有高S / N比的定量元素图像，并以高能量精度和能量分辨率测量电子能量损失谱。 本发明涉及通过校正由于过量的X射线引起的死区时间而获得的特征X射线光谱的测量，以及在特征X射线的情况下基于零损耗峰值校正能量而获得的电子能量损失谱的测量 光谱和电子能量损失谱是通过在扫描样品的表面以观察Z对比度图像的同时用电子束照射一个照射位置一定时间来测量的。 根据本发明，可以通过特征X射线，通过电子能量损失谱和高能量分辨光谱具有高S / N比的元素图像来测量具有高S / N比的定量元素图像 。

    ELECTRON MICROSCOPE WITH INTEGRATED DETECTOR(S)
    9.
    发明公开
    ELECTRON MICROSCOPE WITH INTEGRATED DETECTOR(S) 审中-公开
    与一个或多个内嵌的侦测电子显微镜

    公开(公告)号：EP2430432A1

    公开(公告)日：2012-03-21

    申请号：EP10775207.3

    申请日：2010-05-14

    申请人： Aspex Corporation

    发明人： SCHAMBER, Frederick, H. ,  VAN BEEK, Cornelis, G.

    IPC分类号： G01N23/00

    CPC分类号： H01J37/244 ,  H01J37/256 ,  H01J37/28 ,  H01J2237/24415 ,  H01J2237/2807

    摘要： An electron microscope including a vacuum chamber for containing a specimen to be analyzed, an optics column, including an electron source and a final probe forming lens, for focusing electrons emitted from the electron source, a specimen stage positioned in the vacuum chamber under the probe forming lens for holding the specimen, and an x-ray detector positioned within the vacuum chamber. The x-ray detector includes an x-ray sensitive solid-state sensor and a mechanical support system for supporting and positioning the detector, including the sensor, within the vacuum chamber. The entirety of the mechanical support system is contained within the vacuum chamber. Multiple detectors of different types may be supported within the vacuum chamber on the mechanical support system. The mechanical support system may also include at least one thermoelectric cooler element for thermo-electrically cooling the x-ray sensors.