公开(公告)号：EP3188213A4

公开(公告)日：2018-07-18

申请号：EP15813227

申请日：2015-08-19

Applicant: NUCTECH CO LTD

Inventor： TANG HUAPING ,  CHEN ZHIQIANG ,  LI YUANJING ,  WANG YONGGANG ,  QIN ZHANFENG

IPC: H01J35/02 ,  H01J3/02 ,  H01J35/06

CPC classification number: H01J35/065 ,  H01J3/021 ,  H01J35/14 ,  H01J2203/022 ,  H01J2203/0224 ,  H01J2203/0236 ,  H01J2235/062 ,  H01J2235/068 ,  H05G1/52

Abstract: The present disclosure is directed to an electron source and an X-ray source using the same. The electron source of the present invention comprises: at least two electron emission zones, each of which comprises a plurality of micro electron emission units, wherein the micro electron emission unit comprises: a base layer, an insulating layer on the base layer, a grid layer on the insulating layer, an opening in the grid layer, and an electron emitter that is fixed at the base layer and corresponds to a position of the opening, wherein the micro electron emission units in the same electron emission zone are electrically connected and simultaneously emit electrons or do not emit electrons at the same time, and wherein different electron emission zones are electrically partitioned.

公开(公告)号：EP2826056A4

公开(公告)日：2016-08-17

申请号：EP13761314

申请日：2013-03-14

Applicant: NANOX IMAGING PLC

Inventor： IIDA KOICHI ,  KENMOTSU HIDENORI ,  YAMAZAKI JUN ,  MASUYA HITOSHI

IPC: H01J1/304 ,  G01N23/00 ,  G01N23/04

CPC classification number: H01J3/14 ,  G01N23/046 ,  G01N2223/204 ,  G01N2223/419 ,  G01T1/161 ,  H01J1/3042 ,  H01J3/021 ,  H01J3/027 ,  H01J29/467 ,  H01J31/127 ,  H01J35/065 ,  H01J35/14 ,  H01J2235/068

公开(公告)号：EP2624277A4

公开(公告)日：2016-05-18

申请号：EP11829029

申请日：2011-09-26

Applicant: KEK HIGH ENERGY ACCELERATOR

Inventor： URAKAWA JUNJI ,  TERUNUMA NOBUHIRO ,  TAKATOMI TOSHIKAZU

IPC: H01J37/073 ,  G21K1/00 ,  G21K5/02 ,  H01J23/06 ,  H01J25/04 ,  H05H7/08

CPC classification number: H01J29/481 ,  H01J3/021 ,  H01J3/36 ,  H01J23/06 ,  H01J25/04 ,  H01J2237/0432 ,  H01J2237/04735 ,  H01J2237/062 ,  H01J2237/06333 ,  H05G2/00 ,  H05H7/08 ,  H05H2007/084

Abstract: A photocathode high-frequency electron-gun cavity apparatus of the present invention is provided with a high-frequency acceleration cavity (1), a photocathode (8, 15), a laser entering port (9), a high-frequency power input coupler port (10), and a high-frequency resonant tuner (16). Here, the apparatus adopts an ultra-small high-frequency accelerator cavity which contains a cavity cell formed only with a smooth and curved surface at an inner face thereof without having a sharp angle part for preventing discharging, obtaining higher strength of high-frequency electric field, and improving high-frequency resonance stability. Further, the photocathode is arranged at an end part of a half cell (5) of the high-frequency acceleration cavity for maximizing electric field strength at the photocathode face, perpendicular incidence of laser is ensured by arranging a laser entering port at a position facing to the photocathode behind an electron beam extraction port of the high-frequency acceleration cavity for maximizing quality of short-bunch photoelectrons, and a high-frequency power input coupler port is arranged at a side part of the cell of the high-frequency acceleration cavity for enhancing high-frequency electric field strength. According to the above, it is possible to provide a small photocathode high-frequency electron-gun cavity apparatus capable of generating a high-strength and high-quality electron beam.

公开(公告)号：EP2682977A2

公开(公告)日：2014-01-08

申请号：EP13169180.0

申请日：2013-05-24

Applicant: Samsung Electronics Co., Ltd

Inventor： Kim, Do-yoon ,  Kim, Yong-chul ,  Kim, Il-hwan ,  Park, Shang-hyeun ,  Jeong, Tae-won

IPC: H01J35/06

CPC classification number: H01J19/24 ,  B82Y99/00 ,  H01J1/02 ,  H01J3/021 ,  H01J9/02 ,  H01J31/127 ,  H01J35/06 ,  H01J35/065 ,  H01J63/02 ,  H01J63/06 ,  H01J2203/0208 ,  H01J2235/062 ,  H01J2235/068 ,  H01J2329/4608 ,  Y10S977/939

Abstract: A mesh electrode adhesion structure includes: a substrate (130), and an opening defined in the substrate; a mesh electrode (150) on the substrate, and a first combination groove (160) defined in the mesh electrode; and an adhesion layer (140) between the substrate and the mesh electrode. The mesh electrode includes: a mesh region corresponding to the opening defined in the substrate, and an adhesion region in which the first combination groove exposes the adhesion layer.

Abstract translation: 网状电极粘合结构包括：基板（130）和限定在基板中的开口; 在所述基板上的网状电极（150）和限定在所述网状电极中的第一组合槽（160） 以及在所述基板和所述网状电极之间的粘附层（140）。 网状电极包括：对应于在基板中限定的开口的网格区域，以及粘合区域，第一组合凹槽暴露粘合层。

公开(公告)号：EP2648205A2

公开(公告)日：2013-10-09

申请号：EP11845718.3

申请日：2011-11-29

Applicant: SN Display Co., Ltd.

Inventor： LEE, Choonrae ,  KIM, Hakwoong

IPC: H01J1/30 ,  H01J9/02

CPC classification number: H01J9/18 ,  B82Y99/00 ,  H01J1/304 ,  H01J3/021 ,  H01J9/025 ,  H01J9/148 ,  H01J31/127 ,  H01J2201/30469 ,  H01J2329/0455 ,  H01J2329/46 ,  Y10S977/952

Abstract: A field emission display (FED) and a fabrication method thereof are disclosed. A lower plate of the FED includes: a cathode electrode formed on the substrate; a diffusion blocking layer formed on the cathode electrode; a seed metal layer formed on the diffusion blocking layer; carbon nano-tubes (CNTs) grown as single crystals from the grains of the seed metal layer; a gate insulating layer formed on the substrate on which the cathode electrode, the diffusion blocking layer, and the seed metal layer are formed, in order to cover the CNTs; and a gate electrode formed on the gate insulating layer.

Abstract translation: 公开了场发射显示器（FED）及其制造方法。 FED的下板包括：形成在基板上的阴极; 形成在阴极上的扩散阻挡层; 形成在扩散阻挡层上的种子金属层; 从种子金属层的晶粒生长为单晶的碳纳米管（CNT）; 形成在其上形成有阴极电极，扩散阻挡层和种子金属层的基板上以覆盖CNT的栅极绝缘层; 以及形成在栅极绝缘层上的栅电极。

公开(公告)号：EP2320446B1

公开(公告)日：2013-07-03

申请号：EP09803014.1

申请日：2009-07-30

Applicant: Life Technology Research Institute, Inc.

Inventor： ISHIGURO,Yoshihisa ,  HABA, Masanori, ,  SUZUKI, Ryouichi

IPC: H01J1/304 ,  H01J35/06 ,  H01J63/06 ,  H01J3/02

CPC classification number: H01J35/065 ,  H01J1/304 ,  H01J3/021 ,  H01J2201/30453 ,  H01J2235/062

公开(公告)号：EP2126953B8

公开(公告)日：2013-04-10

申请号：EP06842811.9

申请日：2006-12-29

Applicant: Selex Electronic Systems S.p.A.

Inventor： BRUNETTI, Francesca ,  DI CARLO, Aldo ,  LUCCI, Massimiliano ,  ORLANDUCCI, Silvia ,  RICCITELLI, Riccardo ,  TERRANOVA, Maria Letizia

IPC: H01J29/46 ,  H01J3/02 ,  H01J21/10

CPC classification number: H01J21/10 ,  H01J3/021

公开(公告)号：EP2227819A1

公开(公告)日：2010-09-15

申请号：EP09714160.0

申请日：2009-01-08

Applicant: Excico Group N.V.

Inventor： MAKAROV, Maxime

IPC: H01J3/02 ,  H01J33/00 ,  H01S3/097

CPC classification number: H01J3/021 ,  H01J33/00 ,  H01S3/0959 ,  H01S3/09707

Abstract: The invention relates to a pumped electron source (1) that comprises an ionisation chamber (4), an acceleration chamber (2) with an electrode (3) for extracting and accelerating primary ions and forming a secondary-electron beam, characterised in that said pumped electron source (1) comprises a power supply (11) adapted for applying to said electrode (3) a positive voltage for urging a primary plasma (17) outside the acceleration chamber (2), and a negative voltage pulse for extracting and accelerating the primary ions and forming a secondary-electron beam.

公开(公告)号：EP1746620B1

公开(公告)日：2010-04-14

申请号：EP06117214.4

申请日：2006-07-14

Applicant: Samsung SDI Co., Ltd.

Inventor： Cho, Young-Suk ,  Bae, Jae-Woo ,  Lim, Ik-Chul ,  Choi, Yong-Soo

IPC: H01J1/304 ,  H01J63/02

CPC classification number: H01J63/02 ,  H01J3/021 ,  H01J3/08 ,  H01J29/481 ,  H01J31/127 ,  H01J63/06

公开(公告)号：EP1898442A2

公开(公告)日：2008-03-12

申请号：EP07021328.5

申请日：2001-10-24

Applicant: Canon Kabushiki Kaisha ,  Sony Corporation

Inventor： Curtin, Christopher J. ,  Haven, Duane A. ,  Fahlen, Theodore S. ,  Hopple, George B. ,  Pan, Lawrence S. ,  Maslennikov, Igor L. ,  Nystrom, Michael J. ,  Liu, Jun Gordon ,  Gluck, Randolph S. ,  Kosugi, Tomoo ,  Dunphy, James C. ,  Morris, David L.

IPC: H01J29/94

CPC classification number: H01J29/481 ,  H01J1/30 ,  H01J3/021 ,  H01J9/148 ,  H01J29/467 ,  H01J29/94 ,  H01J2209/385

Abstract: A structure comprising:
a plate;
an electron emissive element overlying the plate; a support region overlying the plate; and a getter region overlying at least part of the support region, a composite opening extending through the getter region and through the support region generally laterally where the electron-emissive element overlies the plate.

Abstract translation: 一种结构，包括：板（40）; 覆盖所述板的电子发射元件（104） 覆盖所述板的支撑区域（102,108） 以及覆盖所述支撑区域的至少一部分的吸气剂区域（112），延伸穿过所述吸气剂区域并且通常横跨所述支撑区域的复合开口，其中所述电子发射元件覆盖在所述板上。