公开(公告)号：EP3062918A1

公开(公告)日：2016-09-07

申请号：EP13896392.1

申请日：2013-10-30

Applicant: Hewlett-Packard Development Company, L.P.

Inventor： MCKAY, Roger A. ,  SADIK, Patrick W.

IPC: B01D69/00

CPC classification number: B81C1/00539 ,  B81B2201/058 ,  B81C1/00119 ,  B81C2201/0115 ,  B81C2201/014 ,  C23C14/5873 ,  C23F1/02 ,  C23F1/16 ,  H01M4/0492 ,  H01M4/386

Abstract: Etching islands are formed on a first face of a substrate and a second face of the substrate non-parallel to the first face. The first face and the second face of the substrate are concurrently exposed to a solution that reacts with the etching islands to concurrently form porous regions extending into the first face and the second face.

Abstract translation: 蚀刻岛形成在基板的第一面和不平行于第一面的基板的第二面上。 衬底的第一面和第二面同时暴露于与蚀刻岛反应的溶液，以同时形成延伸到第一面和第二面的多孔区域。

公开(公告)号：EP2683792A4

公开(公告)日：2014-12-03

申请号：EP12757282

申请日：2012-03-08

Applicant: FUJIFILM ELECTRONIC MATERIALS ,  FUJIFILM CORP

Inventor： TAKAHASHI TOMONORI ,  INABA TADASHI ,  MIZUTANI ATSUSHI ,  DU BING ,  WOJTCZAK WILLIAM A ,  TAKAHASHI KAZUTAKA ,  KAMIMURA TETSUYA

IPC: C09K13/06 ,  C23F1/16 ,  C23F1/30 ,  H01L21/285 ,  H01L21/3213 ,  H01L21/768

CPC classification number: H01L21/32134 ,  C09K13/06 ,  C23F1/16 ,  C23F1/28 ,  C23F1/30 ,  C23F1/44 ,  H01L21/28518 ,  H01L21/76843

公开(公告)号：EP2196560A3

公开(公告)日：2014-01-22

申请号：EP09177793.8

申请日：2009-12-02

Applicant: General Electric Company

Inventor： Kool, Lawrence Bernard ,  Huang, Shyh-Chin ,  Gigliotti, jr., Michael Francis Xavier ,  Surman, Cheryl Margaret ,  Leach, Andrew Michael ,  Elliott, Andrew J.

IPC: C23F1/16 ,  C23F1/44 ,  C23F1/30 ,  F01D25/00 ,  G01N33/52 ,  G01N21/78 ,  G01N21/64 ,  G01N21/91 ,  G01N21/94

CPC classification number: B22D27/045 ,  B22D31/002 ,  C23F1/16 ,  C23F1/30 ,  C23F1/44 ,  F05B2230/10 ,  F05B2230/21 ,  F05B2230/211 ,  G01N21/78 ,  G01N21/94 ,  G01N2021/7786 ,  G01N2021/945

Abstract: A method (10) for manufacturing a casted article (62) is presented. The method (10) includes steps of forming a casted article (62) by a liquid metal cooled directional solidification process (12), removing a metallic material (66) from a surface (64) of the casted article (62), (24) and inspecting the surface (64) of the casted article (62), (26). The surface (64) of the casted article (62) is inspected for the presence of the metallic material (66) by exposing the surface (64) to a visualization reagent (110). A system (60) for manufacturing the casted article (62) is also presented.

公开(公告)号：EP2683792A1

公开(公告)日：2014-01-15

申请号：EP12757282.4

申请日：2012-03-08

Applicant: FujiFilm Electronic Materials USA, Inc. ,  FUJIFILM Corporation

Inventor： TAKAHASHI, Tomonori ,  INABA, Tadashi ,  MIZUTANI, Atsushi ,  DU, Bing ,  WOJTCZAK, William A. ,  TAKAHASHI, Kazutaka ,  KAMIMURA, Tetsuya

IPC: C09K13/00

CPC classification number: H01L21/32134 ,  C09K13/06 ,  C23F1/16 ,  C23F1/28 ,  C23F1/30 ,  C23F1/44 ,  H01L21/28518 ,  H01L21/76843

Abstract: This disclosure relates to an etching composition containing at least one sulfonic acid, at least one compound containing a halide anion, the halide being chloride or bromide, at least one compound containing a nitrate or nitrosyl ion, and water. The at least one sulfonic acid can be from about 25% by weight to about 95% by weight of the composition. The halide anion can be chloride or bromide, and can be from about 0.01% by weight to about 0.5% by weight of the composition. The nitrate or nitrosyl ion can be from about 0.1% by weight to about 20% by weight of the composition. The water can be at least about 3% by weight of the composition.

Abstract translation: 本发明涉及包含至少一种磺酸，至少一种含卤化物阴离子的化合物，卤化物为氯化物或溴化物，至少一种含有硝酸根或亚硝酰基离子的化合物和水的蚀刻组合物。 该至少一种磺酸可以为该组合物的约25重量％至约95重量％。 卤化物阴离子可以是氯化物或溴化物，并且可以是组合物的约0.01重量％至约0.5重量％。 硝酸盐或亚硝酰离子可以为组合物重量的约0.1％至约20％。 水可以是组合物重量的至少约3％。

公开(公告)号：EP2556551A2

公开(公告)日：2013-02-13

申请号：EP11760804.2

申请日：2011-04-08

Applicant: Nexeon Limited

Inventor： GREEN, Mino ,  LIU, Feng-Ming ,  JIANG, Yuxiong ,  STEVENS, Valerie, Elizabeth, Dawn ,  MILLS-LAMPTEY, Benjamin, Odarkwei

IPC: H01M4/38 ,  C09K13/04 ,  C09K13/08 ,  H01M4/04

CPC classification number: C23F1/16 ,  C09K13/08 ,  H01L21/30604 ,  H01M4/0492 ,  H01M4/38

Abstract: The present invention provides a method for treating silicon to form pillars ( see Figure 2), especially for use as the active anode material in Li-ion batteries. The process is simple to operate on a commercial scale since it uses a solution containing only a small number of ingredients whose concentration needs to be controlled and it can be cheaper to operate than previous processes. The etching solution comprises: 0.01 to 5M HF 0.002 to 0.2M of metal ions capable of nucleating on and forming a porous layer comprising regions of elemental metal on the silicon surface; 0.001 to 0.7M of an oxidant selected from the group O
2 , O
3 , H
2 O
2 , the acid, ammonium or alkali metal salt of NO
3
- , S
2 O
8
2- , NO
2
- , B
4 O
7
2- and ClO
4
- a mixture thereof. The treated silicon is suitably removed from the solution. Etched particles or fibres made by the process may be used in the form of a composite material in the active electrode material.

公开(公告)号：EP2130946A1

公开(公告)日：2009-12-09

申请号：EP09251509.7

申请日：2009-06-08

Applicant: Turbine Overhaul Services Private Limited

Inventor： Rao, Garimella Balaji ,  Woo, Chee Kin ,  Balakrishnan, Ranjan A/L S.

IPC: C23F1/16 ,  C23F1/44 ,  B23P6/04 ,  F01D25/00

CPC classification number: C23F1/44 ,  C23F1/16 ,  F05B2230/10 ,  F05B2230/80 ,  F05B2230/90

Abstract: A method for chemically stripping a metallic coating from a substrate (100) is described. The coating is treated in the presence of microwave energy with a solution (120) containing at least one acid known to dissolve the coating. The application of microwave energy accelerates the dissolution and allows for the use of diluted solutions. Coatings of interest include diffusion aluminides on superalloy substrates.

Abstract translation: 描述了从基板（100）对金属涂层进行化学剥离的方法。 在微波能量存在下用包含至少一种已知溶解涂层的酸的溶液（120）处理涂层。 微波能量的应用加速溶解并允许使用稀释溶液。 感兴趣的涂层包括在超级合金基底上的扩散铝化物。

公开(公告)号：EP2011903A3

公开(公告)日：2009-09-23

申请号：EP08252311.9

申请日：2008-07-05

Applicant: DePuy Products, Inc.

Inventor： Tong, Weidong ,  Salvati, Lawrence

IPC: C23F1/26 ,  C23F1/44 ,  C23F1/16

CPC classification number: C23F1/26 ,  A61F2002/30925 ,  A61L2400/18 ,  C23F1/16 ,  C23F1/44

Abstract: A process for etching a metal such as a cobalt-chromium-molybdenum alloy involves contacting the metal with a solution comprising hydrogen chloride and a persulphate salt; in which the solution has a hydrogen chloride concentration of about 3 to about 11.7 moles/litre and a molar ratio of hydrogen chloride to persulphate salt of about 4:1 to about 134:1, in which the persulphate salt is dissolved in the solution with the use of heat input.

公开(公告)号：EP1975987A2

公开(公告)日：2008-10-01

申请号：EP08103209.6

申请日：2008-03-31

Applicant: ADVANCED TECHNOLOGY MATERIALS, INC.

Inventor： Visintin, Pamela M. ,  Jiang, Ping ,  Korzenski, Michael B. ,  King, Mackenzie ,  Fletcher, Kristin A. ,  Minsek, David W.

IPC: H01L21/311 ,  H01L21/3213 ,  H01L21/02

CPC classification number: H01L21/02079 ,  C11D1/004 ,  C11D1/29 ,  C11D3/042 ,  C11D3/046 ,  C11D3/3454 ,  C11D3/3947 ,  C11D11/0041 ,  C23F1/16 ,  G03F7/423 ,  H01L21/31111 ,  H01L21/31133 ,  H01L21/32134

Abstract: Removal compositions and processes for removing at least one material layer from a rejected microelectronic device structure having same thereon. The removal composition includes hydrofluoric acid. The composition achieves substantial removal of the material(s) to be removed while not damaging the layers to be retained, for reclaiming, reworking, recycling and/or reuse of said structure.

Abstract translation: 去除组合物和用于从其上具有相同材料的废弃微电子器件结构去除至少一个材料层的方法。 除去组合物包括氢氟酸。 该组合物实质上除去待除去的材料，同时不损坏要保留的层，用于回收，再加工，再循环和/或再利用所述结构。

公开(公告)号：EP1895577A1

公开(公告)日：2008-03-05

申请号：EP06780631.5

申请日：2006-06-22

Applicant: MITSUBISHI GAS CHEMICAL COMPANY, INC.

Inventor： YAGUCHI, Kazuyoshi, Mitsubishi Gas Chemical Co.Inc ,  ABE, Kojiro, Mitsubishi Gas Chemical Company, Inc. ,  OHTO, Masaru, Mitsubishi Gas Chemical Company, Inc

IPC: H01L21/308 ,  C23F1/16 ,  H01L21/28 ,  H01L29/78

CPC classification number: H01L21/32134 ,  C09K13/08 ,  C23F1/16 ,  C23F1/26 ,  H01L29/513 ,  H01L29/518

Abstract: The invention provides an etchant composition employed for selectively etching a metallic material in production of a semiconductor device from an insulating material having high dielectric constant, an insulating material of silicon oxide film or silicon nitride film, and a metallic material, characterized in that the etchant composition is an aqueous solution containing a fluorine compound, and a chelating agent having, in the molecular structure thereof, a phosphorus oxo-acid as a functional group; or is an aqueous solution containing a fluorine compound, a chelating agent having, in the molecular structure thereof, a phosphorus oxo-acid as a functional group, and an inorganic acid and/or an organic acid. The invention also provides a method for producing a semiconductor device employing the etchant composition. According to the invention, a metallic material can be etched selectively and efficiently.

Abstract translation: 本发明提供了上，用于选择性地在生产半导体装置的从在绝缘具有高介电常数的材料的蚀刻绝缘氧化硅膜或氮化硅膜，电影，和金属材料的材料构成的金属材料，所用的蚀刻剂组合物，在DASS特点死蚀刻剂 组合物是其wässrige溶液含有氟化合物，和具有螯合剂，在分子结构中，磷含氧酸作为官能团; 或者是wässrige溶液含有氟化合物，具有螯合剂，在其分子结构，磷含氧酸作为官能团，和无机酸和/或有机酸的。 因此，本发明提供了一种制造半导体器件用人蚀刻剂组合物的方法。 。根据本发明，金属材料可被选择性地且高效地蚀刻。

公开(公告)号：EP1430288A4

公开(公告)日：2007-02-21

申请号：EP02772779

申请日：2002-09-19

Applicant: NIRA SCIENCES LTD

Inventor： SHEKEL YEHUDA ,  HARTMAN IRA M ,  THOMPSON GEORGE A

IPC: C23F1/16 ,  G01N21/35 ,  H01L21/304 ,  H01L21/306 ,  C23F1/46 ,  H01L21/00

CPC classification number: H01L21/67075 ,  C23F1/16 ,  G01N21/3577 ,  G01N21/359

Abstract: Methods and apparatus for real-time dynamic analysis of a chemical etching process are provided. The apparatus comprises an optical element (36) operative to pass a beam of electromagnetic radiation at least at two points in time through a liquid phase (42) comprising at least one chemical component and including an etchant, wherein the etchant is operative to etch a solid. A detector (60) is operative to perform an ex-situ non-contact scanning detection of the electromagnetic radiation subsequent to passing through the liquid phase in a near infra-red range (700-2500 nm) at the at least at two points in time so as to detect a change in an optical property of at least one of the at least one chemical component and the etchant. The apparatus further comprises a processor (64) operative to activate an algorithm so as to compare the change in the optical property of the at least of the at least one chemical component and the etchant received from the detector so as to provide data concerning a change in concentration of the etchant; and further configured to perform a chemometric manipulation of the data so as to provide a rate of etching of the solid.