摘要:
A leadless package semiconductor device has a top surface, a bottom surface opposite to the top surface, and multiple sidewalls between the top and bottom surfaces. At least one connection pad is disposed on the bottom surface. The connection pad includes a connection portion and at least one protrusion portion that extends from the connection portion and away from the bottom surface such that the protrusion portion and the connection portion surround a space on the bottom surface.
摘要:
Provided are a Cu core ball and a cu core column, which achieve dropping strength and strength against heat cycle. The Cu core ball (1) contains a Cu ball (2) made of Cu or a Cu alloy and a solder layer (3) which is made of a solder alloy composed of Sn and Cu and covers the Cu ball (2). The solder layer (3) contains not less than 0.1 % through not more than 3.0 % of Cu and the remainder is composed of Sn and impurities.
摘要:
The disclosure provides a light emitting device package including a package body (210), a first lead frame (220a) and a second lead frame (220b) disposed on the package body, and a flip-chip type light emitting diode (240) electrically connected to the first lead frame and the second lead frame via respective conductive adhesives (310, 320). The conductive adhesives may be formed of a solder or of any other conductive materials. At least one of the conductive adhesives has its smallest width (W0) at a central region thereof.
摘要:
A packaged microelectronic assembly includes a microelectronic element (104) joined to a substrate (102, 402). The microelectronic element (104) has a front surface (122) and a plurality of first solid metal posts (110) extending away from the front surface (122). Each of the first posts (110) has a width (W2) in a direction of the front surface (122) and a height (H2) extending from the front surface (122), wherein the height (H2) is at least half of the width (W2). The substrate (102, 402) has a top surface (101, 401) and a plurality of second solid metal posts (108) extending from the top surface (101, 401) and joined to the first solid metal posts (110) by a fusible metal (130), each second post (108) having a second width (W1) in a direction along the top surface (101, 401) and each projecting to a second height (H1) above the top surface (101, 401). The substrate (402) also has conductive interconnects (407) extending through the substrate (402) and electrically connecting terminals at a bottom surface (403) opposite the top surface (401) with the second solid metal posts (108). The plurality of first solid metal posts (110) and the plurality of second solid metal posts (108) are etched metal posts. The posts (110, 108) may have a frustoconical shape defined by the etching process.
摘要:
A semiconductor device includes a semiconductor element (10) having an electrode formation surface on which an electrode terminal (14) and a re-wiring portion (18) are formed. The re-wiring portion (18) is electrically connected to the electrode terminal (14). An external terminal (12) made of wire has a base end connected to the re-wiring portion (18) and a distal end extending therefrom. An electrically insulating resin (30) covers the electrode formation surface in such a manner that at least the distal end of the external terminal (12) is exposed outside the insulating resin. During a fabricating process, the electrode formation surface is coated with an electrically insulating resin (30) and then a part of the electrically insulating resin is removed from the distal end (12a) of the external connecting terminal (12) to expose the same outside the insulating resin.
摘要:
A method of forming a bump electrode on an IC electrode (104) includes the steps of forming a ball bond (115) on an IC electrode by a wire bonding apparatus, moving up a bonding capillary (113), moving the bonding capillary sideway and then downward, bonding an Au wire (101) to the ball bond portion, and cutting the Au wire, the Au wire being prevented from coming in contact with the periphery of the ball bond portion except for the ball bond portion by presetting a descent position of the bonding capillary to a position higher than a position in which the ball bond is formed.
摘要:
A method of forming a bump electrode on an IC electrode includes the steps of forming a ball bond on an IC electrode by a wire bonding apparatus, moving up a bonding capillary, moving the bonding capillary sideway and then downward, bonding an Au wire to the ball bond portion, and cutting the Au wire, the Au wire being prevented from coming in contact with the periphery of the ball bond portion except for the ball bond portion by presetting a descent position of the bonding capillary to a position higher than a position in which the ball bond is formed.