摘要:
Three-dimensional structures of stably associated mesogenic ligand-functionalized nanoparticles are provided. Compositions that include these structures, as well as methods of making the structures are also provided. The structures, compositions and methods find use in a variety of applications, such as light emitting devices (e.g., video displays, lights, etc.), inks, photonics and encapsulation technologies.
摘要:
The present invention provides a novel photosensitive compound having an azido group suitable for exposure to light of a short wavelength; a photosensitive resin containing the photosensitive compound; and a photosensitive composition containing the photosensitive compound or photosensitive resin. The photosensitive compound containing a photosensitive unit represented by formula (1): wherein R is selected from among the following groups, X is selected from among the following groups, and each of Y and Z represents a hydrogen atom, an alkyl group, an acetal-group-containing alkyl group, an aryl group, an aralkyl group, or a substituent containing a base-forming nitrogen atom, wherein at least one of R and X contains an azido group.
摘要:
Compounds represented by general formula (I) and salts thereof useful as non-tolerance-inducing antiviral agents, wherein A is O, CH2 or S; R1 is lower alkoxycarbonyl, COOH or the like; R2 is H, OR6, F, Cl, Br, CN, NHR?6 or SR6¿ (wherein R6 is H, C¿1?-C6 lower alkyl or the like); one of R?3 and R3'¿ is H and the other thereof is H, CN, a nitrogenous group such as amino, or the like; R4 is -NHR6 or -N=CHR?6; and R5¿ is CH¿2CH2XR?6 or CH(XR6)CH2XR6 (wherein X is O, S or NH).
摘要:
Printing plates having a photoresist layer thereon that can be exposed by a computer controller laser have improved sensitivity and do not require a photomask step. We have found photoresists that include a film forming polymer, an organo azide and a photosensitive dye that absorbs light at the frequency of the patterning laser and converts it to heat energy. The heat energy in turn elevates the temperature of the organo azide above its dissociation temperature, destroying the azide in areas exposed to the light source, and solubilizing those regions. A flood exposure with ultraviolet light hardens the unexposed resist, improving its resistance to etch solvents. Thus a flood exposure with ultraviolet light can be performed prior to or after pattern exposure, to harden the resist.