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    METHOD FOR PRODUCING MOLDED BODY HAVING METAL PATTERN
    2.
    发明公开
    METHOD FOR PRODUCING MOLDED BODY HAVING METAL PATTERN 审中-公开

    公开(公告)号：EP3817526A1

    公开(公告)日：2021-05-05

    申请号：EP19826058.0

    申请日：2019-05-30

    申请人： DIC Corporation

    发明人： FUKAZAWA, Norimasa ,  FUJIKAWA, Wataru ,  SHIRAKAMI, Jun

    IPC分类号： H05K3/38 ,  B23K26/351 ,  C23F1/30 ,  C23F1/44 ,  C25D5/02 ,  C25D5/56 ,  H05K3/08

    摘要： The present invention provides a method for producing a shaped article having a metal pattern on an electrically insulating shaped article. The method includes step 1, forming an electrically conductive metal layer (M1) on an electrically insulating shaped article (A), the electrically conductive metal layer (M1) containing silver particles; step 2, removing part of the electrically conductive metal layer (M1) to separate the electrically conductive metal layer (M1) into an electrically conductive metal layer in the pattern region (PM1), the pattern region being the region in which the pattern is to be formed, and an electrically conductive metal layer in the no-pattern region (NPM1), the no-pattern region being the region in which the pattern is not to be formed; step 3, forming a patterned metal layer (PM2) on the electrically conductive metal layer in the pattern region (PM1) by electrolytic plating; and step 4, removing the electrically conductive metal layer in the no-pattern region (NPM1) using an etchant. This production method allows the manufacturer to form a strongly adhering metal pattern without roughening the surface of the shaped article and to produce a shaped article having a metal pattern on its surface without requiring vacuum equipment or special equipment.

    ETCHING SOLUTION FOR MULTILAYER THIN FILM HAVING COPPER LAYER AND MOLYBDENUM LAYER CONTAINED THEREIN
    4.
    发明公开
    ETCHING SOLUTION FOR MULTILAYER THIN FILM HAVING COPPER LAYER AND MOLYBDENUM LAYER CONTAINED THEREIN 有权
    蚀刻液和蚀刻的多层薄膜的铜层，并在其中钼涂敷

    公开(公告)号：EP2537960A1

    公开(公告)日：2012-12-26

    申请号：EP11742363.2

    申请日：2011-02-15

    申请人： Mitsubishi Gas Chemical Company, Inc.

    发明人： OKABE, Satoshi ,  NARITA, Kazuyo ,  MATSUBARA, Masahide ,  ADANIYA, Tomoyuki ,  MARUYAMA, Taketo

    IPC分类号： C23F1/18 ,  C23F1/30 ,  H01L21/308 ,  H01L21/3205 ,  H01L21/3213 ,  H01L23/52

    CPC分类号： H01L21/32134 ,  C23F1/18 ,  C23F1/26 ,  C23F1/44 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

    摘要： Discloses are an etching solution for a multilayer thin film having a copper layer and a molybdenum layer contained therein; and an etching method of a multilayer thin film having a copper layer and a molybdenum layer contained therein using the same. Specifically disclosed are an etching solution for a multilayer thin film having a copper layer and a molybdenum layer contained therein, which includes (A) hydrogen peroxide, (B) a fluorine atom-free inorganic acid, (C) an organic acid, (D) an amine compound having a carbon number of from 2 to 10 and having an amino group and a hydroxyl group in a total group number of 2 or more, (E) an azole, and (F) a hydrogen peroxide stabilizer, and which has a pH of from 2.5 to 5; and an etching method using the same.

    摘要翻译： 盘很多是在对具有铜层和其中所含的钼层的多层薄膜的蚀刻溶液; 和在蚀刻具有铜层及所用相同的含有钼层的多层薄膜的方法。 氢具体公开一种用于具有铜层和其中所含的钼层，其包括（A）过氧化氢，（B）不含氟原子的无机酸，（C）有机酸，多层薄膜的蚀刻溶液（D ）氢在胺化合物，其具有2至10个的碳原子数和在氨基和在2以上的总组数的羟基，（e）至唑，和（F）的过氧化物稳定剂具有，并且其具有 的pH为2.5至5中; 和在蚀刻方法使用相同的。

    METHOD FOR REMOVING METAL COMPOUND
    8.
    发明公开
    METHOD FOR REMOVING METAL COMPOUND 审中-公开

    公开(公告)号：EP4098771A1

    公开(公告)日：2022-12-07

    申请号：EP21748101.9

    申请日：2021-01-12

    申请人： Showa Denko K.K.

    发明人： MATSUI, Kazuma

    IPC分类号： C23F1/30 ,  H01L21/304

    摘要： There is provided a method for removing a metal compound capable of selectively removing an oxide of a metal, a nitride of a metal, or an oxynitride of a metal while suppressing the removal of silicon dioxide, silicon nitride, polysilicon, a simple substance of a metal, or the like. The method includes bringing at least one metal compound selected from oxides of a metal, nitrides of a metal, and oxynitrides of a metal into contact with a treatment liquid to remove it from a treatment object. The metal is at least one selected from tungsten, cobalt, nickel, tantalum, titanium, iron, copper, and molybdenum. The treatment liquid is an aqueous solution containing at least one compound for removal selected from carboxylic acids and salts thereof and contains the compound(s) for removal at a total concentration of 2 mass% or more.