摘要:
In accordance with an embodiment of the disclosure, a method of patterning can include dividing an image into a set of frame sections; determining a tip pattern for a respective portion of an image to be patterned by each tip of the tip array in each frame section of the set of frame sections; disposing the tip array in a patterning position in a first location of the substrate corresponding to a location of the substrate in which the first frame section in the set of frame sections is to be patterned; projecting a first pattern of radiation onto the tip array to selectively irradiate one or more tips of the tip array and pattern the substrate, wherein the first pattern of radiation corresponds to a tip pattern for the first frame section; disposing the tip array in a patterning position in a second location of the substrate corresponding to a location of the substrate in which the second frame section in the set of frame sections is to be patterned; projecting a second pattern of radiation onto the tip array to selectively irradiate tips of the tip array and pattern the substrate, wherein the second pattern of radiation corresponds to a tip pattern for the second frame section; and repeating the disposing and projecting for each frame section in the set of frame sections to pattern the image.
摘要:
The present invention relates to an apparatus for creating a pattern on a workpiece sensitive to radiation, such as a photomask, a display panel or a microoptical device. The apparatus comprises a radiation source and a spatial modulator (SLM) having a multitude of modulating elements (pixels). It further comprises an electronic data processing and delivery system feeding drive signals to the modulator, a precision mechanical system for moving said workpiece and an electronic control system coordinating the movement of the workpiece, the feeding of the signals to the modulator and the intensity of the radiation, so that said pattern is stitched together from the partial images created by the sequence of partial patterns. According to the invention the drive signals can set a modulating element to a number of states larger than two.
摘要:
The present invention relates to an apparatus for creating a pattern with extremely high resolution on a workpiece, such as a pattern on a semiconductor chip. The apparatus comprises a source for emitting electromagnetic radiation in the EUV wavelength range, a spatial modulator (SLM) having a multitude of pixels, an electronic data processing and delivery system receiving a digital description of the pattern to be written, extracting from it a sequence of partial patterns, converting said partial patterns to modulator signals, and feeding said signals to the modulator, and a precision mechanical system for moving said workpiece and/or projection system relative to each other. It further comprises an electronic control system coordinating the movement of the workpiece, the feeding of the signals to the modulator and the intensity of the radiation, so that said pattern is stitched together from the partial images.
摘要:
The invention relates to at least one light emitter which is arranged to illuminate at least one illumination face via a microshutter arrangement, said microshutter arrangement comprising at least one microshutter, each microshutter comprising a transillumination hole and an electrically activatable diaphragm device associated with it, at least one of the light emitters being arranged to illuminate at least two microshutters via a first lens arrangement, said lens arrangement comprising at least one microlens arranged with respect to each microshutter so that the light emitted by the light emitter or emitters is focused in the individual microshutters. According to the invention it is possible to achieve an illumination over very large areas with an unprecedentedly high and homogeneous illumination intensity on an illumination face.
摘要:
L'invention concerne un procédé de réglage d'une machine d'exposition photolithographique. A partir d'une plaquette témoin munie de motifs de test identiques, le procédé consiste à illuminer (1000) successivement les motifs de test en lumière blanche, à mesurer (2000) le coefficient de réflectivité de chaque motif de test, et à établir (3000) la loi de correspondance de ce coefficient en fonction, pour chaque emplacement, du paramètre de défocalisation du faisceau d'illumination. La valeur de mise au point optimale est déterminée (4000) par critère de seuil de la valeur du coefficient de réflectivité). Application à la fabrication des circuits intégrés.
摘要:
The present disclosure generally relates to a method and apparatus for processing a web-based substrate. As the substrate travels between rollers, the substrate may be stretched and thus distorted. Once the substrate reaches the roller, the substrate distortion is fixed. By adjusting the processing parameters, the distorted substrate is processed without correcting the distortion.
摘要:
A partial section of an aerial image measuring unit is arranged at a wafer stage (WST) and part of the remaining section is arranged at a measurement stage (MST), and the aerial image measuring unit measures an aerial image of a mark formed by a projection optical system (PL). Therefore, for example, when the aerial image measuring unit measures a best focus position of the projection optical system (PL), the measurement can be performed using the position of the wafer stage, at which a partial section.of the aerial image measuring unit is arranged, in a direction parallel to an optical axis (AX) of the projection optical system as a datum for the best focus position. Accordingly, when exposing an object (W) with illumination light (IL), the position of the wafer stage (WST) in the direction parallel to the optical axis (AX) is adjusted with high accuracy based on the measurement result of the best focus position.