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    CIRCULAR PRINTED MEMORY SYSTEM AND METHOD HAVING ROBUSTNESS TO ORIENTATION
    1.
    发明公开
    CIRCULAR PRINTED MEMORY SYSTEM AND METHOD HAVING ROBUSTNESS TO ORIENTATION 审中-公开

    公开(公告)号：EP3413312A1

    公开(公告)日：2018-12-12

    申请号：EP18173455.9

    申请日：2018-05-21

    申请人： Xerox Corporation

    发明人： FOWLER, Jeffrey M.

    IPC分类号： G11B9/02 ,  G11C11/22 ,  H01L27/11507 ,  G11B9/14

    CPC分类号： G11C11/2273 ,  G11B9/02 ,  G11B9/1454 ,  G11C5/04 ,  G11C11/221 ,  H01L27/11507

    摘要： A circular memory device includes a plurality of bottom electrodes, a plurality of top electrodes, a ferroelectric layer, and a plurality of memory storage locations within the ferroelectric layer at a crossover point of each of the bottom electrodes and each top electrode. Contact pads of the bottom electrodes and top electrodes may include a perimeter that defines an annular sector that allows a memory operation to be performed on the circular memory device across a range of rotational positions. In an example implementation, the memory operation may be performed on the circular memory device regardless of the rotational orientation of the circular memory device relative to a reader.

    RECORDING MEDIUM, FULLERENE THIN FILM MANUFACTURING METHOD, RECORDING AND REPRODUCING DEVICE, INFORMATION RECORDING METHOD, AND INFORMATION READ-OUT METHOD
    2.
    发明公开
    RECORDING MEDIUM, FULLERENE THIN FILM MANUFACTURING METHOD, RECORDING AND REPRODUCING DEVICE, INFORMATION RECORDING METHOD, AND INFORMATION READ-OUT METHOD 审中-公开
    记录介质，富勒烯薄膜制造方法，记录和再现装置，信息记录方法和信息读出方法

    公开(公告)号：EP3229235A1

    公开(公告)日：2017-10-11

    申请号：EP16817906.7

    申请日：2016-06-28

    申请人： Showa Denko K.K.

    发明人： TONEGAWA, Sho ,  ICHIKAWA, Masatoshi ,  HANAWA, Kenzo

    IPC分类号： G11B9/04 ,  G11B9/14

    CPC分类号： G11B9/04 ,  C01B32/156 ,  G11B9/14 ,  G11B9/149

    摘要： According to the present invention, there is provided a recording medium comprising a substrate, a platinum layer formed on the substrate and having a (111) plane preferentially oriented, and a fullerene single crystal thin film formed on the platinum layer, and configured to be a recording layer, wherein an average value of average surface roughness Ra's with respect to four or more visual fields measured by using an atomic force microscope in a surface of the fullerene thin film is 0.5 nm or less.

    摘要翻译： 根据本发明，提供了一种记录介质，该记录介质包括衬底，形成在衬底上并具有优先取向的（111）面的铂层和形成在铂层上的富勒烯单晶薄膜，并且被配置为 记录层，其中在所述富勒烯薄膜的表面中通过使用原子力显微镜测量的相对于四个或更多视野的平均表面粗糙度Ra的平均值为0.5nm或更小。

    Nanometric mechanical oscillator, method of fabricating the same, and measurement apparatus using the same
    6.
    发明公开
    Nanometric mechanical oscillator, method of fabricating the same, and measurement apparatus using the same 审中-公开
    Nanometrischer，机械师Oszillator，Herstellungsverfahrendafürund Messvorrichtung damit

    公开(公告)号：EP1775258A1

    公开(公告)日：2007-04-18

    申请号：EP07000437.9

    申请日：2000-07-11

    申请人： Japan Science and Technology Agency

    发明人： Kawakatsu, Hideki ,  Toshiyoshi, Hiroshi

    IPC分类号： B81B3/00 ,  B81C1/00 ,  G01P15/00 ,  G11B9/14 ,  H01L29/84 ,  G12B21/20

    CPC分类号： G01P15/00 ,  G01P15/08 ,  G01P15/097 ,  G01Q20/02 ,  G01Q20/04 ,  G01Q60/32 ,  G01Q60/38 ,  G01Q70/06 ,  G11B9/1418 ,  H03H9/02244

    摘要： A nanometric mechanical oscillator comprising a parallel-spring supported portion including two triangular-pyramidal probes which are formed on a semiconductor substrate such that the probes project inward in an overhung state and are connected to each other. A nanometric mechanical oscillator comprising a parallel-spring supported portion including a probe assuming the form of a triangular prism projecting from a semiconductor substrate. A nanometric mechanical oscillator comprising a parallel-spring supported portion including a mass formed on a semiconductor substrate and assuming the shape of a truncated rectangular pyramid.

    摘要翻译： 一种纳米机械振荡器，包括平行弹簧支撑部分，该平行弹簧支撑部分包括形成在半导体基板上的两个三角锥体探针，使得探针向内突出成悬空状态并彼此连接。 一种纳米机械振荡器，包括平行弹簧支撑部分，其包括假定呈从半导体衬底突出的三角形棱镜的形式的探头。 一种纳米机械振荡器，包括平行弹簧支撑部分，该平行弹簧支撑部分包括在半导体衬底上形成的质量并且呈现截顶长方形金字塔形状。

    Probe for data storage apparatus
    7.
    发明公开
    Probe for data storage apparatus 审中-公开
    SondefüreinDatenspeichergerät

    公开(公告)号：EP1691363A1

    公开(公告)日：2006-08-16

    申请号：EP06250009.5

    申请日：2006-01-04

    申请人： Samsung Electronics Co., Ltd.

    发明人： Yoo, Jin-gyoo ,  Kim, Dae-eun ,  Chung, Koo-hyun 102-1308 Dongyang Express Apt.

    IPC分类号： G11B9/00 ,  G11B9/12 ,  G11B9/14

    CPC分类号： G11B9/1409 ,  G01Q80/00

    摘要： Provided is a probe for a data storage apparatus. The probe includes a coating layer formed on a tip of the probe, wherein a peak of the tip is exposed and the coating layer and the peak form a predetermined contact area with respect to a recording medium. In addition, the probe may also include an insulating layer formed between the coating layer and the tip of the probe. The coating layer, the insulating layer, and the peak of the tip have a predetermined contact area with respect to the recording medium. Consequently, the probe can obtain high resolving ability by using a sharp-type tip and simultaneously can reduce the degree of abrasion of the peak of the tip, thereby resulting in an excellent durability.

    摘要翻译： 提供了一种用于数据存储装置的探针。 探针包括形成在探针的尖端上的涂层，其中尖端的峰暴露，并且涂层和峰形成相对于记录介质的预定接触面积。 此外，探针还可以包括在涂层和探针的尖端之间形成的绝缘层。 涂层，绝缘层和尖端的峰值相对于记录介质具有预定的接触面积。 因此，探头可以通过使用尖锐的尖端获得高的分辨能力，同时可以降低尖端的峰值的磨损程度，从而获得优异的耐久性。

    Nanometric mechanical oscillator
    9.
    发明公开
    Nanometric mechanical oscillator 审中-公开
    纳米机械振荡器

    公开(公告)号：EP1553048A1

    公开(公告)日：2005-07-13

    申请号：EP05005160.6

    申请日：2000-07-11

    申请人： Japan Science and Technology Agency

    发明人： Hideki, Kawakatsu ,  Hiroshi, Toshiyoshi

    IPC分类号： B81B3/00 ,  B81C1/00 ,  G01P15/00 ,  G11B9/14 ,  H01L29/84 ,  G12B21/20

    CPC分类号： G01P15/00 ,  G01P15/08 ,  G01P15/097 ,  G01Q20/02 ,  G01Q20/04 ,  G01Q60/32 ,  G01Q60/38 ,  G01Q70/06 ,  G11B9/1418 ,  H03H9/02244

    摘要： A measurement apparatus using a nanometric mechanical oscillator comprising:

    (a) a base;
    (b) an oscillator mass; and
    (c) an elastic neck portion for connecting the base and the oscillator mass:
       characterized in that the oscillator mass is a tetrahedral shape and the neck portion is a very thin single columnar shape whose diameter is smaller than the size of supported surface of the oscillator mass whereby characteristics of a sample are measured by oscillation of the oscillator mass caused by the sample.

    摘要翻译： 一种使用纳米机械振荡器的测量设备，包括：（a）基座; （b）振荡器质量; （c）用于连接所述基座和所述振荡器质量的弹性颈部;其特征在于，所述振荡器质量是四面体形状，并且所述颈部是非常薄的单柱状形状，其直径小于所述振荡器的所述支撑表面的尺寸 振荡器质量，由此通过由样品引起的振荡器质量的振荡来测量样品的特性。

    METHOD AND APPARATUS FOR STORING DIGITAL INFORMATION IN THE FORM OF STORED CHARGES.
    10.
    发明公开
    METHOD AND APPARATUS FOR STORING DIGITAL INFORMATION IN THE FORM OF STORED CHARGES. 失效
    方法和设备存贮对装药的形式数字信息。

    公开(公告)号：EP0560757A4

    公开(公告)日：1993-07-20

    申请号：EP90911112

    申请日：1990-06-14

    申请人： UNIV LELAND STANFORD JUNIOR

    发明人： QUATE CALVIN F ,  BARRETT ROBERT C

    IPC分类号： G11B9/00 ,  G11B9/08 ,  G11B9/14

    CPC分类号： G11B9/08 ,  B82Y10/00 ,  G11B9/14 ,  G11B9/1445 ,  G11B9/1472 ,  Y10S977/947

    摘要： Method and apparatus (10) for storing digital information in a dense memory structure. A semiconductor substrate (12) has a thin insulating layer (14) formed thereon. Over the thin insulating layer (14) is formed a dielectric charge-storage layer (16). A piezoelectric bimorph cantilever arm (30) has a tip (32) formed at its free end to access certain memory sites defined by charge-storage regions (40, 42, 44) in the charge-storage layer (16). To write information in the form of charges into a memory site tip (32) contacts or is in close proximity to the surface of the charge-storage layer (16) and an electric field is applied between the tip (32) and the substrate (12) to induce charges to tunnel through the thin insulating layer (14) into the charge-storage layer (16) where the charges are stored as trapped charges. Information is read from a storage-site by spacing the tip (32) of the cantilever arm (30) a distance (d) from the surface of the charge storage layer (16) and applying an electric field between the tip (32) and the substrate (12). The capacitive force on the tip (32) is then measured to determine the amount of charge stored in that memory site. Alternatively charge is deposited directly on the surface of a single insulating layer. Charge sites are arranged in circular tracks on a rotating substrate (52) to provide a high density memory array (50). Charge sites are also arranged in linear tracks by forming alternating layers of conductive (62) and non-conductive (64) substrate layers over which are formed thin insulating layers (68) and charge-storage layers (70). This produces a number of spaced-apart charge-storage tracks. Tracks are also provided by depositing metal strips (70) or scribing grooves (80) on the surface of a device.