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    PIEZOELECTRIC DEVICE AND METHOD FOR MANUFACTURING PIEZOELECTRIC DEVICE
    3.
    发明公开
    PIEZOELECTRIC DEVICE AND METHOD FOR MANUFACTURING PIEZOELECTRIC DEVICE 有权
    VERFAHREN ZUR HERSTELLUNG EINER PIEZOELEKTRISCHEN VORRICHTUNG

    公开(公告)号：EP2624451A1

    公开(公告)日：2013-08-07

    申请号：EP11829169.9

    申请日：2011-09-28

    申请人： Murata Manufacturing Co., Ltd.

    发明人： ITO Korekiyo

    IPC分类号： H03H9/25 ,  H01L41/09 ,  H01L41/18 ,  H01L41/22 ,  H03H3/02 ,  H03H3/08 ,  H03H9/17

    CPC分类号： H01L41/253 ,  H01L21/02694 ,  H01L41/0536 ,  H01L41/081 ,  H01L41/0815 ,  H01L41/0838 ,  H01L41/18 ,  H01L41/27 ,  H01L41/277 ,  H01L41/297 ,  H01L41/312 ,  H01L41/332 ,  H01L41/47 ,  H03H3/02 ,  H03H3/08 ,  H03H9/02574 ,  H03H9/059 ,  H03H9/173

    摘要： Disclosed is a piezoelectric device free of some problems associated with ion implantation: the degradation of the surface roughness of the piezoelectric thin film and the cracking of the supporting substrate. Also disclosed is a method for manufacturing this piezoelectric device.
    During an isolation formation step a supporting substrate (50) has a piezoelectric thin film (10) formed on its front (14) with a compressive stress film (90) present on its back (15). The compressive stress film (90) compresses the surface (14 on the piezoelectric single crystal substrate (1) side of the supporting substrate (50), and the piezoelectric thin film (10) compresses the back (15) of the supporting substrate (50), which is opposite to the surface (14) on the piezoelectric single crystal substrate (1) side. In other words, the compressive stress produced by the compressive stress film (90) and that by the piezoelectric thin film (10) are in balance in the supporting substrate (50). This makes the supporting substrate (50) free of warpage and able to remain flat. To this end, the driving force that induces isolation in the isolation formation step is gasification of the implanted ionized element rather than the compressive stress to the isolation plane produced by the piezoelectric thin film (10).

    摘要翻译： 公开了一种没有与离子注入相关的一些问题的压电装置：压电薄膜的表面粗糙度的劣化和支撑衬底的开裂。 还公开了一种用于制造该压电装置的方法。 在隔离形成步骤期间，支撑衬底（50）具有在其前部（14）上形成有在其背面（15）上存在的压缩应力膜（90）的压电薄膜（10）。 压缩应力膜（90）压缩支撑基板（50）的压电单晶基板（1）侧的表面（14），压电薄膜（10）压缩支撑基板（50）的背面（15） ），与压电单晶基板（1）侧的表面（14）相反，换句话说，压缩应力膜（90）和压电薄膜（10）产生的压缩应力为 在支撑基板（50）上的平衡，这使得支撑基板（50）没有翘曲并且能够保持平坦，为此，在隔离形成步骤中诱导隔离的驱动力是注入离子化元件的气化，而不是 由压电薄膜（10）产生的对隔离平面的压缩应力。

    Nanopiezoelectric generator and method of manufacturing the same
    4.
    发明公开
    Nanopiezoelectric generator and method of manufacturing the same 审中-公开
    纳米压电发电机及其制造方法

    公开(公告)号：EP2615655A2

    公开(公告)日：2013-07-17

    申请号：EP12189105.5

    申请日：2012-10-18

    申请人： Samsung Electronics Co., Ltd

    发明人： Cha, Seung-nam ,  Kim, Sung-min ,  Sohn, Jung-inn

    IPC分类号： H01L41/08 ,  H01L41/113 ,  H01L41/18 ,  H01L41/253 ,  H01L41/29

    CPC分类号： H01L41/29 ,  H01L41/113 ,  H01L41/18 ,  H01L41/253

    摘要： A nanopiezoelectric generator is provided. The nanopiezoelectric generator includes a first electrode; a second electrode; at least one nanostructure that is interposed between the first electrode and the second electrode, and includes a piezoelectric material and first carriers; and a concentration adjusting unit that adjusts a concentration of the first carriers in the at least one nanostructure.

    摘要翻译： 提供纳米压电发生器。 纳米压电发生器包括第一电极; 第二电极; 至少一个介于第一电极和第二电极之间的纳米结构，并且包括压电材料和第一载体; 以及浓度调节单元，其调节所述至少一个纳米结构中的第一载体的浓度。