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公开(公告)号：EP4359344A1
公开(公告)日：2024-05-01
申请号：EP22829515.0
申请日：2022-06-23
申请人： Drexel University
IPC分类号： C01B21/06 , C01B21/076 , C01B21/082 , C01B32/90 , C01B32/914 , C01B32/921 , C01B32/949 , C08K3/14 , C04B35/453 , C04B35/56 , C07C317/04
CPC分类号： C01B21/082 , C01B21/076 , C01B21/06 , C01B32/921 , C01B33/18 , C01B21/068 , C01B35/04 , C01P2004/5220130101 , C01P2004/6420130101 , C01P2004/6220130101 , C09C1/36 , C09C1/3653 , C09C1/3669 , C09C1/3692 , C09C1/3045 , C09C1/3063 , C09C1/309 , C09C1/28 , C09C1/028 , C09C3/06 , C09C3/08 , C09C3/006 , C09C1/22 , C09C1/24
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公开(公告)号：EP4104217A1
公开(公告)日：2022-12-21
申请号：EP21706500.2
申请日：2021-02-12
IPC分类号： H01M4/04 , C01B21/082 , H01M4/134 , H01M4/1395 , H01M4/36 , H01M4/38 , H01M4/58 , H01M4/62 , H01M10/0525 , H01M10/0567 , H01M4/02
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3.发明授权
公开(公告)号：EP3409747B1
公开(公告)日：2022-07-27
申请号：EP16753809.9
申请日：2016-03-04
发明人： HE, Jinhua , TENG, Xiaoming , LIANG, Chao , FU, Yibing
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公开(公告)号：EP3502079B1
公开(公告)日：2020-12-02
申请号：EP17843332.2
申请日：2017-07-31
发明人： FUKAE, Kosuke , MICHIUCHI, Masato , TSUDA, Keiichi
IPC分类号： C01B21/082 , C04B35/58 , B22F1/00 , B22F9/02
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公开(公告)号：EP3620432A1
公开(公告)日：2020-03-11
申请号：EP18193179.1
申请日：2018-09-07
申请人： UMICORE AG & CO. KG
发明人： SUNDERMEYER, Joerg , PULZ, Susanne
IPC分类号： C01B21/082 , C01B21/087 , C07F11/00 , C07C211/65 , C07F7/00 , C07F9/00 , C23C16/18 , C23C16/30 , H01L21/02
摘要： Die vorliegende Erfindung betrifft ein Verfahren zur Herstellung von Dialkylamido-Elementverbindungen. Sie betrifft insbesondere ein Verfahren zur Herstellung von Dialkylamido-Elementverbindungen des Typs E(NRR') x , bei dem zunächst M[AlH 4 ] mit HNRR' zu M[Al(NRR') 4 ] und Wasserstoff und anschließend das gebildete M[Al(NRR') 4 ] mit EX x zu E(NRR') x und M[AlX 4 ] umgesetzt wird, wobei M = Li, Na oder K ist, R = C n H 2n+1 mit n = 1 bis 20 und unabhängig davon R' = C n H 2n+1 mit n = 1 bis 20 ist, E ein Element der Gruppen 3 bis 15 des Periodensystems der Elemente ist, X = F, Cl, Br oder I ist und x = 2, 3, 4 oder 5 ist.
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公开(公告)号：EP3310791B1
公开(公告)日：2019-10-09
申请号：EP16732419.3
申请日：2016-06-09
发明人： ARKLES, Barry, C. , PAN, Youlin , JOVE, Fernando
IPC分类号： C07F7/08 , C07F7/10 , C08C19/25 , C23C16/34 , H01L21/02 , C01B21/068 , C01B21/082
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公开(公告)号：EP2987770B1
公开(公告)日：2019-09-04
申请号：EP14785975.5
申请日：2014-04-16
发明人： DANTE, Roberto Cipriano Antonio , MARTÍN RAMOS, Pablo , NAVAS GRACIA, Luis Manuel , HERNÁNDEZ NAVARRO, Salvador , PÉREZ LEBEÑA, Eduardo , MARTÍN GIL, Jesús
IPC分类号： C01B21/082 , C08F226/02 , B82Y30/00 , C01B21/087
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公开(公告)号：EP3099652B1
公开(公告)日：2018-12-26
申请号：EP15743454.9
申请日：2015-01-29
IPC分类号： C06B25/34 , C01B21/082 , B01D15/20 , B01D15/22 , B01J20/20 , C01B21/087
CPC分类号： C01B21/087 , B01D15/20 , B01D15/22 , B01J20/20 , B01J2220/52
摘要： The invention concerns a method for making ADN from GUDN in one single process step. GUDN is reacted with an ammonium source (ammonium-sulfamate, ammonium-sulfate, ammonia) and an ion-change gives ADN from GUDN in one process stage. The advantages are that the process gives pure ADN without potassium contaminants and that a smaller amount of solvent is necessary.
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公开(公告)号：EP3312139A4
公开(公告)日：2018-07-18
申请号：EP17810448
申请日：2017-01-25
申请人： LG CHEMICAL LTD
发明人： PARK JI HEE , SOHN KWON NAM , YANG DOO KYUNG , KWON KI YOUNG
IPC分类号： C01B21/082 , C01B32/182 , H01M4/133 , H01M4/587 , H01M10/052
CPC分类号： C01B21/082 , C01B32/182 , H01M4/133 , H01M4/587 , H01M10/052
摘要： The present invention relates to a self-assembled composite of carbon nitride and graphene oxide, and in particular, to including a self-assembled composite prepared by heat treating a mixed solution dissolving melamine, tri-thiocyanuric acid and graphene oxide (GO) in a positive electrode of a lithium-sulfur battery to suppress elution of lithium polysulfide. According to the present invention, the self-assembled composite containing a pyridinic group in large quantities and having improved conductivity adsorbs lithium polysulfide eluted from a positive electrode during charge and discharge and performs a role of preventing diffusion of the lithium polysulfide, and therefore, lithium-sulfur battery capacity and lifecycle properties can be enhanced by suppressing a shuttle reaction.
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10.发明公开
公开(公告)号：EP3144964A4
公开(公告)日：2017-11-15
申请号：EP15792649
申请日：2015-05-14
发明人： KAWAKITA JIN , HORVATH BARBARA , CHIKYO TOYOHIRO
IPC分类号： H01L21/3205 , C01B21/082 , C08G61/12 , C08K3/08 , C08L65/00 , H01L21/768 , H01L23/48 , H01L23/522 , H01L23/532 , H01L23/538 , H01L25/065 , H01L25/07 , H01L25/18 , H01L27/12 , H01L29/792 , H01Q9/27 , H01Q9/38
CPC分类号： H01L23/5384 , C01B21/0823 , C01P2006/40 , C08G61/124 , C08G2261/3221 , C08G2261/51 , C08K3/08 , C08K2003/0806 , C08L65/00 , H01L21/3205 , H01L21/768 , H01L21/76846 , H01L21/76879 , H01L21/76898 , H01L23/481 , H01L23/522 , H01L23/532 , H01L23/5386 , H01L25/065 , H01L25/0657 , H01L25/07 , H01L25/18 , H01L27/12 , H01L28/00 , H01L29/792 , H01L2225/06544 , H01L2924/0002 , H01L2924/00
摘要： By using silicon oxynitride with an oxygen content of 4.2 to 37.5 at% as a material for a barrier layer, adhesiveness similar to that of silicon oxide and an Ag diffusion prevention property similar to that of silicon nitride can be realized. In particular, in a semiconductor device in which a plurality of silicon chips is vertically stacked by through-silicon vias, Ag is prevented from being diffused into Si and adhesiveness to Si becomes favorable when an Ag/polypyrrole complex is used as a conductive filling material used for the formation of a barrier layer provided on the inner surface of the via.
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