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公开(公告)号：EP4368752A1
公开(公告)日：2024-05-15
申请号：EP23206580.5
申请日：2023-10-30
发明人： JESKO, Radek , VALEK, Lukas , TESIK, Jan
CPC分类号： C30B29/36 , C30B23/02 , C30B23/066
摘要： A crucible for manufacturing semiconductor crystals may be disposed adjacent to a heating element. The crucible may include a first seed crystal site and a second seed crystal site at opposed ends of the crucible. A compartment may be defined between an outer wall and an inner wall of the crucible, where the inner wall is formed with a porous graphite membrane. Source powder loaded into the compartment may then be heated by the heating element to sublimate and diffuse from the compartment and through the inner wall to provide crystal growth of a first seed crystal at the first seed crystal site and of a second seed crystal at the second seed crystal site.
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公开(公告)号：EP4361323A1
公开(公告)日：2024-05-01
申请号：EP22827001.3
申请日：2022-02-16
发明人： GU, Guangan , CHEN, Jiangang , WANG, Junjie
摘要： The invention relates to a diluting device for epitaxial doping gas, comprising a first pipeline through which doping gas passes, a concentration detection mechanism and a first flow control mechanism being provided on the first pipeline; and a controller, signally connected to the concentration detection mechanism and the first flow control mechanism. Diluted doping gas provided by the diluting device disclosed in the present invention has a stable concentration, ensuring the obtained epitaxial layer has a stable resistivity.
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公开(公告)号：EP4291699A1
公开(公告)日：2023-12-20
申请号：EP22702700.0
申请日：2022-01-28
申请人： SOITEC
发明人： KIM, YoungPil
IPC分类号： C30B23/02 , C30B25/16 , C30B29/06 , H01L21/762
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4.发明公开
公开(公告)号：EP4212480A3
公开(公告)日：2023-11-01
申请号：EP22210539.7
申请日：2022-11-30
申请人： SENIC Inc.
发明人： PARK, Jong Hwi , KU, Kap Ryeol , KIM, Jung Gyu , CHOI, Jung Woo , SEO, Jung Doo , KYUN, Myung Ok
IPC分类号： C01B32/956 , C04B35/565 , C30B29/36 , C30B23/00 , C04B35/626 , C30B23/02 , C30B35/00
摘要： Disclosed are a silicon carbide powder, a method of manufacturing a silicon carbide powder, and a silicon carbide wafer. More particularly, the silicon carbide powder includes carbon and silicon and in the silicon carbide powder, O1s/C1s of a surface measured by X-ray photoelectron spectroscopy is 0.28 or less.
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公开(公告)号：EP4259863A1
公开(公告)日：2023-10-18
申请号：EP21836146.7
申请日：2021-12-13
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6.发明公开
公开(公告)号：EP4259862A2
公开(公告)日：2023-10-18
申请号：EP21835745.7
申请日：2021-12-13
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公开(公告)号：EP4259857A1
公开(公告)日：2023-10-18
申请号：EP21824590.0
申请日：2021-12-13
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公开(公告)号：EP4217528A1
公开(公告)日：2023-08-02
申请号：EP21794711.8
申请日：2021-09-23
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公开(公告)号：EP4127276A1
公开(公告)日：2023-02-08
申请号：EP21780187.7
申请日：2021-04-02
申请人： Psiquantum Corp. , Melnichuk, Ann
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