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公开(公告)号:EP4457988A1
公开(公告)日:2024-11-06
申请号:EP22840321.8
申请日:2022-12-21
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公开(公告)号:EP4390974A3
公开(公告)日:2024-10-30
申请号:EP23212744.9
申请日:2023-11-28
发明人: BRANDL, Matthias
摘要: A system (200) for trapping an ion, including one or more lane elements (212) in a substrate, one or more direct current (DC) elements in the substrate and connected to an electrode controller (202), one or more radio frequency (RF) electrodes (218), an RF controller (216) connected to the one or more RF electrodes and configured to provide an RF signal to the one or more RF electrodes, one or more magnetic coils (220) each having a portion associated with at least a portion of a DC element of the one or more DC elements and configured to be superconductive below a critical superconducting temperature, and a magnetic coil controller (114) connected to each magnetic coil of the one or more magnetic coils, where the magnetic coil controller is configured to control the superconductivity and the magnetic flux of each magnetic coil of the one or more magnetic coils in relation to a source magnetic field.
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公开(公告)号:EP3925007B1
公开(公告)日:2024-10-02
申请号:EP20701715.3
申请日:2020-01-20
IPC分类号: B82Y10/00 , G06N10/00 , H01L23/538 , H01L23/00 , H10N69/00 , H01L23/498
CPC分类号: G06N10/00 , B82Y10/00 , H01L24/81 , H01L23/49811 , H01L2224/8119220130101 , H01L2924/1532120130101 , H01L2924/1615220130101 , H01L2924/1625120130101 , H01L2224/8119320130101 , H01L2224/1301920130101 , H01L2224/1622720130101 , H01L2224/113420130101 , H01L2224/8109920130101 , H01L2224/8180120130101 , H01L2224/160120130101 , H01L24/13 , H01L24/16 , H01L2224/0564720130101 , H01L2224/1310920130101 , H01L2224/0564420130101 , H01L2224/0566920130101 , H01L2224/0566420130101 , H01L2224/1311120130101 , H01L2224/1314420130101 , H01L2224/0563920130101 , H01L2224/1316920130101 , H01L2224/1311620130101 , H01L2224/1311320130101 , H01L2224/0566620130101 , H01L2224/1364420130101 , H10N69/00
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公开(公告)号:EP4428764A1
公开(公告)日:2024-09-11
申请号:EP22887065.5
申请日:2022-10-26
申请人: OSAKA UNIVERSITY , Quel, Inc.
IPC分类号: G06N10/00
CPC分类号: G06N10/00
摘要: Provided is a quantum computer controller having exceptional usability, scalability, robustness and other such aspects. A controller 110 of a quantum computer 100 includes a server 130 configured to calculate a waveform signal for manipulating a qubit system 120 having a plurality of qubits, and a plurality of signal processing units 140-1 to 140-N each configured to generate, based on the waveform signal, an electromagnetic wave signal with which the qubit system is irradiated. Each signal processing unit includes a logic device that performs digital signal processing on the waveform signal to generate a baseband signal, a digital oscillator that generates an oscillation signal, a mixer that mixes the baseband signal and the oscillation signal to output a mixed signal, a DA converter that performs a DA conversion on the mixed signal to obtain an analog signal, an RF circuit that generates the electromagnetic wave signal from the analog signal, and an AD converter that performs an AD conversion on an input signal from the RF circuit.
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公开(公告)号:EP4421689A1
公开(公告)日:2024-08-28
申请号:EP22882694.7
申请日:2022-10-11
申请人: Yangtze Delta Industrial Innovation Center of Quantum Science and Technology , Tiangong Quantum Information (Suzhou) Technology Development Co., Ltd.
发明人: CAI, Jian
摘要: A computing power distribution method and apparatus, and a computing power server. The method includes: performing computational problem planning processing on a computational problem to obtain at least one sub-computational problem corresponding to the computational problem and a target algorithm type and computing mode corresponding to each sub-computational problem (210); according to the at least one sub-computational problem corresponding to the computational problem and the target algorithm type and computing mode corresponding to each sub-computational problem, determining at least one computational problem computing task corresponding to each sub-computational problem (220); according to dynamic computing power information of computing nodes and computing power calling relationships, determining at least one target node for each computational problem computing task (230); sending a computing power control command to the target nodes (240); and receiving computing results returned by the target nodes, and send the computing results to an application node (250). According to the method, an appropriate target node is distributed for each sub-computational problem to provide computing power, thereby making the distribution of computing power more reasonable, and also improving the management and operation efficiency of quantum computers and electronic computers.
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公开(公告)号:EP4408149A1
公开(公告)日:2024-07-31
申请号:EP22872712.9
申请日:2022-09-07
摘要: Electron trap device 1 comprises a cryogenic apparatus 40, a superconducting circuit 10 and a heat bath 60. The superconducting circuit 10 and the heat bath 60 are placed within the cryogenic apparatus 40. This allows the superconducting circuit 10 to operate and the heat bath 60 to be maintained at a constant low temperature, e.g., about 20 mK. The superconducting circuit 10 comprises a cooling resonator 20, a microwave resonator 22 and an electron trap region 50. The superconducting circuit 10 comprises a microstructure in which the opposing electrodes are arranged in a position that is linear symmetrical to the center line through the electron trap region and surrounded by a superconductor, such that the electron trap region 50 comprises a plurality of opposing electrodes.
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公开(公告)号:EP3888142B1
公开(公告)日:2024-07-31
申请号:EP19809756.0
申请日:2019-11-22
CPC分类号: G06N10/00 , B82Y10/00 , H10N60/805 , H10N60/0912
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公开(公告)号:EP4401090A1
公开(公告)日:2024-07-17
申请号:EP23151387.0
申请日:2023-01-12
CPC分类号: G06N10/40
摘要: A micro-fabricated device (100, 200, 400) for controlling trapped ions (180) includes a substrate (120) of a dielectric material or a semiconductor material. A structured electrode layer is disposed above the substrate. The structured electrode layer (125) forms a plurality of electrodes of an ion trap configured to trap ions in a space above the structured electrode layer. The structured electrode layer includes a low phonon density of states layer, referred to as low-PDOS layer, the low-PDOS layer being of TiN or TiW or Ti or W and having a thickness of equal to or greater than 100 nm.
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