Abstract:
PROBLEM TO BE SOLVED: To provide a solar cell and manufacturing method thereof capable of improving conversion efficiency.SOLUTION: The solar cell includes a photoelectric conversion part and a substrate of which the photoelectric conversion part is formed on one surface, and which has recesses on a rear face of the one surface and is curved so as to become convex on a side having recesses. The method of manufacturing the solar cell includes: a recess forming step for forming a recess on one surface of the substrate; a photoelectric conversion part forming step for forming the photoelectric conversion part on the rear surface of the one surface of the substrate; and a curving step for curving the substrate, on which the photoelectric conversion part is formed, so as to become convex on the side having recesses.
Abstract:
PROBLEM TO BE SOLVED: To provide an elastic body mechanism and a damper device capable of restraining the shape of an elastically restored elastic body from changing to a shape in an initial state, by combining elastic bodies different in relaxation characteristics in parallel. SOLUTION: This elastic body mechanism 1-1 includes a pair of connecting plates 2 and 3, a rubber metal spring 4 held by the pair of connecting plates 2 and 3, and a fairing spring 5 held by the pair of connecting plates 2 and 3. The rubber metal spring 4 and the fairing spring 5 are arranged in parallel to the pair of connecting plates 2 and 3, and the fairing spring 5 is weaker in the relaxation characteristic than the rubber metal spring 4. COPYRIGHT: (C)2010,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide a method for growing a silicon carbide single crystal, which is based on a solution method and by which morphology of the surface of a crystal growth layer can be improved. SOLUTION: In the method for growing the silicon carbide single crystal, comprising bringing a silicon carbide single crystal into contact with a melt obtained by melting heated Si in a graphite crucible and growing the silicon carbide single crystal on a substrate, the silicon carbide single crystal is deposited and grown from the melt in which elements of Cr and X (Ni or Co) are added so that the ratio of Cr becomes in a range of 30-70 at.% and the ratio of X becomes in a range of 1-25 at.%, based on the total composition. COPYRIGHT: (C)2009,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide an exhaust heat recovery device capable of efficiently recovering an exhaust heat. SOLUTION: The heat pipes 3 to 5 are installed in an exhaust manifold 11 or the like which is a component of an exhaust system in an engine 2, and the exhaust heat is transferred to the thermoelectric elements 6 to 8 by the heat pipes, thus uniformly providing the heat of the exhaust system to the thermoelectric elements 6 to 8 through the heat pipes 3 to 5. Thereby, the power generation efficiency of the thermoelectric elements is improved and the recovery efficiency of engine's exhaust heat is improved accordingly. COPYRIGHT: (C)2003,JPO
Abstract:
PROBLEM TO BE SOLVED: To detect the concentration of each of component fuel of a gasified composite fuel with a simple constitution mountable on a vehicle. SOLUTION: This fuel concentration detection device has a luminescent member 88 as a light source to emitting light with a plurality of wavelength, a reflector 96 to reflect the light emitted from the luminescent member 88 and passing through the gasified composite fuel flowing in the inside of a conduit 82, a spectrograph 98 to divide the light reflected by the reflector 96 and passing through the gasified composite fuel, optical filters 110-114 to respectively pass the light of specific wavelength, photodiodes 90-94 to receive the light passing through the optical filter and to output an electric signal of voltage It corresponding to its strength and an electric circuit 126 to control the photodiodes, and the electric circuit 126 computes the concentration of the composite fuel in accordance with the ratio It/Io of output voltage concerning each of the composite fuel by specifying the output voltage at the time when the concentration is zero as Io. COPYRIGHT: (C)2004,JPO
Abstract:
PROBLEM TO BE SOLVED: To optimally control supply of the air-fuel mixture to an internal combustion engine independently of a change of the fuel condition with consumption of the vapor-liquid fuel mixture. SOLUTION: H/C ratio Rhc of the air-fuel mixture in the gaseous condition is computed on the basis of a detected concentration B of butane (S150). A theoretical air-fuel ratio Rt is computed on the basis of the H/C ratio Rhc (S200). A correction coefficient Ka of a fuel injection period is computed on the basis of the concentration B of butane and the theoretical air-fuel ratio Rt (S250). A basic fuel injection period Tb as the optimal fuel injection period when the natural gas is contained at 100 % is computed (S300). A first target fuel injection period T1 is computed on the basis of the basic fuel injection period Tb and the correction coefficient Ka (S400). A second target fuel injection period T2 for reducing a deviation between the real air-fuel ratio Ra and the theoretical air-fuel ratio Rt is computed (S450). A fuel injection period in relation to an air intake pipe 32 by a fuel injection device 28 is controlled on the basis of the final target fuel injection period Tt as the sum of the first and the second target fuel injection periods (S500, S550). COPYRIGHT: (C)2004,JPO
Abstract:
PROBLEM TO BE SOLVED: To provide an internal combustion engine having a structure of suppressing adhesion of deposits. SOLUTION: A piston 10 includes an uneven surface 12 on a surface of a piston upper part 14 (namely, a piston top surface). The uneven surface 12 is composed by a plurality of cone bodies aligned at an inter-vertex distance (pitch) P. The height of a projection of the uneven surface is defined as H. The relations of P≤0.5 μm and P/2≤H are satisfied. COPYRIGHT: (C)2011,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide a method for growing a silicon carbide single crystal in which the growth rate of the silicon carbide single crystal is high in comparison with that in a known solution growth method. SOLUTION: In the method for growing the silicon carbide single crystal, comprising bringing a silicon carbide single crystal substrate into contact with a melt, obtained by heating Si to melt it in a graphite crucible and growing the single crystal on the substrate, the silicon carbide single crystal is grown from a melt, obtained by adding elements of Cr and X (X is at least one or more kinds of elements selected from Sn, In and Ga) into the melt so that the ratio of Cr becomes in a range of 30-70 atom.% and the ratio of X becomes in a range of 1-25 atom.%, based on the elements in the total composition. COPYRIGHT: (C)2009,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide a manufacturing facility for manufacturing a silicon carbide single crystal which inhibits the production of a silicon carbide polycrystal in a method for manufacturing silicon carbide single crystal by means of a solution method. SOLUTION: The manufacturing facility 10 for manufacturing silicon carbide single crystal by means of the solution method comprises a crucible 2 for holding a solution containing silicon and carbon, a heating device 3 for heating the crucible, and a seed crystal holding part 6 for holding a seed crystal 5, wherein, during at least manufacturing the silicon carbide single crystal, a part 2a which is brought into contact with the liquid level of the solution of an internal surface of the crucible has a degree of surface roughness Ra of ≤2.0 μm. COPYRIGHT: (C)2007,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide a gas adsorption storage tank and a manufacturing method thereof, whose adsorbent is easily exchanged, and filling efficiency of gas is high. SOLUTION: In the gas adsorption storage tank 1, adsorbent 18a, 18b is filled in a tank main body 10. An opening 11, from which a gas inlet port 13a contiguous to a gas ventilation member 13 at an axial center, and inlet and outlet ports 15a, 15b of a heat exchange fluid passages 15 project, is disposed at an end of the tank 1. An opening 12 for filling or taking out the adsorbent 18a, 18b is disposed at the other end of the tank 1, and is sealed with a removable lid 17. COPYRIGHT: (C)2004,JPO