利索-全球专利检索

  1. Login
  2. Sign Up

Search Results

35 records (took 0.012 seconds)

    Magnetic memory
    21.
    发明专利
    Magnetic memory 有权
    磁记忆

    公开(公告)号：JP2014179425A

    公开(公告)日：2014-09-25

    申请号：JP2013051806

    申请日：2013-03-14

    Applicant: Toshiba Corp ,  株式会社東芝 ,  National Institute Of Advanced Industrial & Technology ,  独立行政法人産業技術総合研究所

    Inventor： SHIMOMURA NAOHARU ,  KITAGAWA EIJI ,  AMANO MINORU ,  SAIDA DAISUKE ,  YAKUSHIJI KEI ,  NOZAKI TAKAYUKI ,  YUASA SHINJI ,  FUKUSHIMA AKIO ,  IMAMURA HIROSHI ,  KUBOTA HITOSHI

    IPC: H01L27/105 ,  G11C11/15 ,  H01L21/8246 ,  H01L29/82 ,  H01L43/08

    CPC classification number: G11C11/161 ,  G11C11/155 ,  G11C11/165 ,  G11C11/1673 ,  G11C11/1675 ,  H01F10/123 ,  H01F10/3254 ,  H01F10/3286 ,  H01L27/228 ,  H01L29/82 ,  H01L43/02 ,  H01L43/08

    Abstract: PROBLEM TO BE SOLVED: To provide a magnetic memory capable of avoiding the occurence of a read disturb and having a margin for dispersion and fluctuation of a pulse width of writing and reading.SOLUTION: A magnetic memory includes at least one MTJ element having: a magnetic lamination structure 25 having a first magnetic layer 22 in which the orientation of magnetization is fixed, a second magnetic layer 24 in which the orientation of magnetization is variable, and a tunnel barrier layer 23 provided between the first magnetic layer 22 and the second magnetic layer 24; a first electrode 21 provided on an opposite side to the tunnel barrier layer 23 with respect to the first magnetic layer 22; a second electrode 26 provided on an opposite side to the tunnel barrier layer 23 with respect to the second magnetic layer 24; an insulating film 27 provided on a side face of the magnetic lamination structure; and a control electrode 28 provided on a side face of the magnetic lamination structure 25 via the insulating film 27 and to which a voltage is applied in reading. The voltage applied to the control electrode 28 in reading is a voltage set so as to increase an energy barrier of magnetization reversal of the second magnetic layer 24.

    Abstract translation: 要解决的问题：提供一种能够避免读取干扰的发生并且具有用于分散和写入和读取的脉冲宽度的波动的余量的磁存储器。解决方案：磁存储器包括至少一个MTJ元件，其具有： 磁性层压结构25具有磁化取向固定的第一磁性层22，磁化取向可变的第二磁性层24和设置在第一磁性层22和第二磁性层之间的隧道势垒层23 层24; 相对于第一磁性层22设置在与隧道势垒层23相反的一侧的第一电极21; 相对于第二磁性层24设置在与隧道势垒层23相反的一侧的第二电极26; 设置在磁性层叠结构的侧面上的绝缘膜27; 以及经由绝缘膜27设置在磁性层压结构体25的侧面上并在其中施加电压的控制电极28。 在读取中施加到控制电极28的电压是设定为增加第二磁性层24的磁化反转的能量势垒的电压。

    Magnetic memory
    22.
    发明专利
    Magnetic memory 有权
    磁记忆

    公开(公告)号：JP2014067810A

    公开(公告)日：2014-04-17

    申请号：JP2012210980

    申请日：2012-09-25

    Applicant: Toshiba Corp ,  株式会社東芝

    Inventor： SHIMOMURA NAOHARU ,  KITAGAWA EIJI ,  KAMATA SHINGI ,  AMANO MINORU ,  OSAWA YUICHI ,  SAIDA DAISUKE

    IPC: H01L21/8246 ,  H01L27/105 ,  H01L29/82 ,  H01L43/08

    CPC classification number: H01L43/02 ,  G11C11/155 ,  G11C11/161 ,  G11C11/1657 ,  G11C11/1659 ,  H01L27/228 ,  H01L43/08 ,  H01L43/12

    Abstract: PROBLEM TO BE SOLVED: To allow an RH curve of a storage layer to be shifted regardless of saturation magnetization of a reference layer.SOLUTION: A magnetic memory of an embodiment includes a plurality of magnetoresistive elements MTJ which intersect in the first direction and are arranged in a second direction and each of which comprises a lamination structure in which a storage layer 10, a tunnel barrier layer 11, and a reference layer 12 are arranged in this order in a first direction; a conductive wire 18 which extends in the second direction and commonly connected with the plurality of magnetoresistive elements MTJ; insulation layers 17 which surround respective storage layers 10 of the plurality of magnetoresistive elements MTJ; and a shift correction layer 13 which are arranged adjacent to the second direction ends of the plurality of magnetoresistive elements MTJ. Two shift correction layers 13 arranged along a third direction are mutually separated. Further, the magnetization direction of the reference layer 12 and the magnetization direction of the shift correction layers 13 are the same.

    Abstract translation: 要解决的问题：为了允许存储层的RH曲线移动，而与基准层的饱和磁化强度无关。解决方案：一个实施例的磁存储器包括多个在第一方向上相交并且被布置的磁阻元件MTJ 在第二方向上，每一个都包括其中存储层10，隧道势垒层11和参考层12沿第一方向依次布置的叠层结构; 导线18，其在第二方向上延伸并与多个磁阻元件MTJ共同连接; 围绕多个磁阻元件MTJ的各个存储层10的绝缘层17; 以及与多个磁阻元件MTJ的第二方向端相邻配置的偏移校正层13。 沿着第三方向布置的两个偏移校正层13相互分离。 此外，参考层12的磁化方向和偏移校正层13的磁化方向相同。

    Magnetic random access memory with elliptical junction
    23.
    发明专利
    Magnetic random access memory with elliptical junction 有权
    具有非线性接合的磁性随机存取存储器

    公开(公告)号：JP2009283938A

    公开(公告)日：2009-12-03

    申请号：JP2009120741

    申请日：2009-05-19

    Applicant: Crocus Technology Sa ,  クロッカス・テクノロジー・ソシエテ・アノニム

    Inventor： PREJBEANU IOAN LUCIAN

    IPC: H01L21/8246 ,  H01L27/105 ,  H01L43/08

    CPC classification number: G11C11/155 ,  G11C11/161 ,  G11C11/1675

    Abstract: PROBLEM TO BE SOLVED: To provide a magnetic random access memory with an elliptical junction.
    SOLUTION: This magnetic random access memory (MRAM) cell of a magnetic tunnel junction (MTJ) using a thermally assisted switching (TAS) writing procedure includes a magnetic tunnel junction portion formed from: a ferromagnetic storage layer having a magnetization that is adjustable above a high temperature threshold; a reference layer having a fixed magnetization; and an insulating layer arranged between the storage layer and the reference layer. The magnetic tunnel junction portion has an anisotropic shape, and wherein the ferromagnetic storage layer has a magnetocrystalline anisotropy being oriented essentially perpendicular to the long axis of the anisotropic shape of the junction. The TAS MTJ-based MRAM cell limits advantageously the effects of the junction shape anisotropy dispersion coming from the fabrication process and has a lower power consumption in comparison with conventional MTJ-based MRAM and TAS MTJ-based MRAM cells of the prior art. and wherein the ferromagnetic storage layer is related to a TAS MTJ base MRAM cell having crystal magnetic anisotropy of orientation essentially orthogonal to a long axis of the anisotropic shape of the junction portion.
    COPYRIGHT: (C)2010,JPO&INPIT

    Abstract translation: 要解决的问题：提供具有椭圆形结的磁性随机存取存储器。 解决方案：使用热辅助切换（TAS）写入程序的磁性隧道结（MTJ）的磁性随机存取存储器（MRAM）单元包括磁性隧道结部分，其形成为：具有磁化强度的铁磁存储层 可调高于高温阈值; 具有固定磁化强度的参考层; 以及布置在存储层和参考层之间的绝缘层。 磁性隧道结部分具有各向异性形状，并且其中铁磁存储层具有基本上垂直于结的各向异性形状的长轴取向的磁晶各向异性。 基于TAS MTJ的MRAM单元相对于现有技术的传统的基于MTJ的MRAM和TAS MTJ的MRAM单元，有利地限制了来自制造工艺的结形状各向异性色散的影响，并具有较低的功耗。 并且其中所述铁磁存储层与​​具有与所述连接部分的各向异性形状的长轴基本正交的取向的晶体磁各向异性的TAS MTJ基底MRAM单元有关。 版权所有（C）2010，JPO＆INPIT

    Memory
    25.
    发明专利
    Memory 审中-公开
    记忆

    公开(公告)号：JP2007317733A

    公开(公告)日：2007-12-06

    申请号：JP2006143100

    申请日：2006-05-23

    Applicant: Sony Corp ,  ソニー株式会社

    Inventor： HIGO YUTAKA ,  HOSOMI MASAKATSU ,  OMORI HIROYUKI ,  YAMAMOTO TETSUYA ,  YAMANE ICHIYO ,  OISHI TAKENORI ,  KANO HIROSHI

    IPC: H01L21/8246 ,  G11C11/15 ,  H01L27/105 ,  H01L43/08

    CPC classification number: G11C11/16 ,  G11C11/155

    Abstract: PROBLEM TO BE SOLVED: To provide a memory to realize high-speed and stable recording of information.
    SOLUTION: The memory is provided with a storage element 3 for recording information, and a conductor 21 electrically connected to this storage element 3 for realizing recording of information when direction of magnetization M1 of a storage layer 17 is varied by providing, via an intermediate layer, a magnetization fixing layer formed of an insulator to the storage layer 17 for holding information depending on the magnetization state of a magnetic material, and by injecting the spin-polarized electrons in the laminating direction. In this memory, a magnetic material 22 is provided in the periphery of this conductor 21. This magnetic material 22 increases a magnetic field 23 caused by a current I flowing into the conductor 21 and applies a leakage magnetic field 23 to the storage layer 17 of the storage element 3. Accordingly, direction of magnetization M1 of the storage layer 17 is deviated.
    COPYRIGHT: (C)2008,JPO&INPIT

    Abstract translation: 要解决的问题：提供一种实现信息高速稳定记录的存储器。 解决方案：存储器设置有用于记录信息的存储元件3和电连接到该存储元件3的导体21，用于当存储层17的磁化M1的方向改变时实现信息的记录，通过提供通孔 中间层，由绝缘体形成的磁化固定层，用于根据磁性材料的磁化状态保持信息，并且通过沿着层叠方向注入自旋极化电子到存储层17。 在该存储器中，磁性材料22设置在该导体21的周围。该磁性材料22增加由流入导体21的电流I引起的磁场23，并将泄漏磁场23施加到存储层17的 存储元件3.因此，存储层17的磁化方向M1偏离。 版权所有（C）2008，JPO＆INPIT

    Multilevel magnetic storage
    29.
    发明专利
    Multilevel magnetic storage 审中-公开
    多电磁储存

    公开(公告)号：JP2009239282A

    公开(公告)日：2009-10-15

    申请号：JP2009071912

    申请日：2009-03-24

    Applicant: Seagate Technology Llc ,  シーゲイト テクノロジー エルエルシー

    Inventor： CLINTON THOMAS W ,  SEIGLER MICHAEL A ,  COVINGTON MARK WILLIAM ,  SCHOLZ WERNER

    IPC: H01L21/8246 ,  G11B5/39 ,  G11C11/15 ,  H01L27/105 ,  H01L43/08

    CPC classification number: G11C11/155 ,  G11C5/02 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675 ,  G11C11/5607 ,  Y10S977/933 ,  Y10S977/935

    Abstract: PROBLEM TO BE SOLVED: To provide a storage having a memory (100) with an increased storage capacity. SOLUTION: Data bits are vertically stored at multiple memory positions along a stack (50). The memory positions (56, 58) each include a non-magnetic layer (60, 64) and a switchable magnetic layer (62, 66). Current is passed into the stack from a current source (102), a torque is generated between the adjacent magnetic layers at the respective positions by spin momentum transfer, and the direction of magnetization is determined, so that the data bits are stored. The multiple data bits can be stored at the multiple stack memory positions. COPYRIGHT: (C)2010,JPO&INPIT

    Abstract translation: 要解决的问题：提供具有增加的存储容量的存储器（100）的存储器。 解决方案：数据位沿堆叠（50）垂直存储在多个存储位置。 存储位置（56,​​58）各自包括非磁性层（60,64）和可切换磁性层（62,66）。 电流从电流源（102）传递到堆叠中，通过自旋动量传递在相应位置处的相邻磁性层之间产生转矩，并确定磁化方向，从而存储数据位。 多个数据位可以存储在多个堆栈存储位置。 版权所有（C）2010，JPO＆INPIT

Patent Agency Ranking