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    Simultaneous detection of electron
    23.
    发明专利
    Simultaneous detection of electron 有权
    同时检测电子

    公开(公告)号：JP2011238615A

    公开(公告)日：2011-11-24

    申请号：JP2011105205

    申请日：2011-05-10

    Applicant: Fei Co ,  エフ イー アイ カンパニFei Company

    Inventor： PETER CHRISTIAAN TIEMEIJIER ,  BERT HENNING FREITAG ,  SORIN LAZARD

    IPC: H01J37/244 ,  H01J37/26 ,  H01J49/44

    CPC classification number: H01J37/05 ,  H01J37/28 ,  H01J2237/057 ,  H01J2237/2802 ,  H01J2237/2804

    Abstract: PROBLEM TO BE SOLVED: To provide a plurality of detectors which detect electrons passed through a sample.SOLUTION: Preferably, a detector detects an electron which passed through a prism that separates electrons according to the energy thereof. Electrons in different energy ranges are then detected by different detectors. Preferably, one of these detectors measures the energy lost by a sample when the electron passes through the sample. According to one embodiment, EELS is provided in core-loss electron, and a bright field STEM signal from a low-loss electron is supplied simultaneously.

    Abstract translation: 要解决的问题：提供多个检测通过样品的电子的检测器。 解决方案：优选地，检测器检测通过根据其能量分离电子的棱镜的电子。 然后通过不同的检测器检测不同能量范围的电子。 优选地，这些检测器之一测量当电子通过样品时由样品损失的能量。 根据一个实施例，在铁心损耗电子中提供EELS，同时提供来自低损耗电子的亮场STEM信号。 版权所有（C）2012，JPO＆INPIT

    Device and method about focusing of charged particles
    25.
    发明专利
    Device and method about focusing of charged particles 有权
    充电颗粒聚焦的装置和方法

    公开(公告)号：JP2010118331A

    公开(公告)日：2010-05-27

    申请号：JP2009202950

    申请日：2009-09-02

    Applicant: Superion Ltd ,  スプリオン リミテッド

    Inventor： AITKEN DEREK

    IPC: H01J49/30 ,  H01J37/317 ,  H01J49/20

    CPC classification number: H01J37/05 ,  H01J37/3171 ,  H01J49/20 ,  H01J2237/055 ,  H01J2237/057

    Abstract: PROBLEM TO BE SOLVED: To provide a device and a method for selecting and transmitting a plurality of species of charged particles having necessary parameters (mass, energy, valence).
    SOLUTION: Two parallel ion beams 1701 are generated with a spacing from a symmetry center face 1702, and are made to advance into a module provided between planes 1700. These ion beams are deflected on a surface parallel to the symmetry center face, and pass obliquely through a fringe magnetic field of a row of bodies 1716 of a permanent magnet. A plurality of species of necessary ions having different values of parameters reach a series of focuses 1708-1711 and are transmitted through resolution structures (aperture of 1707, and resolution aperture between 1705-1706), and exit from the row of bodies of the magnet at both sides of a beam stopper 1704. Since the two beams are arranged with a spacing in substance, (1) a plurality of species of ions can be transmitted, (2) transmission of protons being a light-weight ion can be prevented, and (3) beam current of about two times of conventional one can be provided.
    COPYRIGHT: (C)2010,JPO&INPIT

    Abstract translation: 要解决的问题：提供一种用于选择和传输具有必要参数（质量，能量，价态）的多种带电粒子的装置和方法。 解决方案：两个平行的离子束1701产生与对称中心面1702间隔的平行离子束1701，并使其进入设置在平面1700之间的模块中。这些离子束在平行于对称中心面的表面上偏转， 并且倾斜地穿过永磁体的一排主体1716的边缘磁场。 具有不同参数值的多种必需离子种类达到一系列焦点1708-1711，并通过分辨率结构（1707的孔径和1705-1706之间的分辨率孔径）传输，并从磁体的主体体排出 在梁阻挡件1704的两侧。由于两个光束实际上具有间隔布置，（1）可以传输多种离子，（2）可以防止作为轻质离子的质子的透射， 和（3）可以提供约2倍的常规光束电流。 版权所有（C）2010，JPO＆INPIT

    Magnetic/electrostatic hybrid deflector for ion implantation system, and deflection method of ion beam
    27.
    发明专利
    Magnetic/electrostatic hybrid deflector for ion implantation system, and deflection method of ion beam 有权
    用于离子植入系统的磁/静电混合定位器，以及离子束的偏转方法

    公开(公告)号：JP2009117393A

    公开(公告)日：2009-05-28

    申请号：JP2009046436

    申请日：2009-02-27

    Applicant: Axcelis Technologies Inc ,  アクセリス テクノロジーズ インコーポレーテッド

    Inventor： BENVENISTE VICTOR ,  RATHMELL ROBERT ,  HUANG YOUGZHANG

    IPC: H01J37/147 ,  H01J27/18 ,  H01J37/00 ,  H01J37/05 ,  H01J37/30 ,  H01J37/317 ,  H01L21/265

    CPC classification number: H01J37/3171 ,  H01J37/05 ,  H01J37/147 ,  H01J2237/057

    Abstract: PROBLEM TO BE SOLVED: To provide a hybrid deflector for reducing energy contamination in ion implantation, and to provide a deflection method of ion beam. SOLUTION: The hybrid deflector 500 for an ion implantation system is composed of a magnetic deflection module 350 which works to deflect ion beam from a beam axis, an electrostatic deflection module 504 which works to deflect the ion beam from the beam axis, and a controller 304 which, based on one or a plurality of input controlling signals, operates either the magnetic deflection module or the electrostatic deflection module selectively. The deflection method of ion beam includes a step in which one or a plurality of characteristics of beam are identified and a step in which, based on the identification, either of the magnetic deflection module or the electrostatic deflection module are operated selectively. COPYRIGHT: (C)2009,JPO&INPIT

    Abstract translation: 要解决的问题：提供用于减少离子注入中的能量污染的混合偏转器，并提供离子束的偏转方法。 解决方案：用于离子注入系统的混合偏转器500由用于偏转来自光束轴的离子束的磁偏转模块350，用于使来自光束轴线的离子束偏转的静电偏转模块504， 以及控制器304，其基于一个或多个输入控制信号选择性地操作磁偏转模块或静电偏转模块。 离子束的偏转方法包括识别光束的一个或多个特性的步骤，并且基于该识别，选择性地操作磁偏转模块或静电偏转模块中的任一个的步骤。 版权所有（C）2009，JPO＆INPIT

    Ion implantation apparatus and method for obtaining a nonuniform ion implantation energy
    28.
    发明专利
    Ion implantation apparatus and method for obtaining a nonuniform ion implantation energy 审中-公开
    离子植入装置和获取非离子植入能量的方法

    公开(公告)号：JP2007299721A

    公开(公告)日：2007-11-15

    申请号：JP2006159208

    申请日：2006-06-08

    Applicant: Hynix Semiconductor Inc ,  株式会社ハイニックスセミコンダクターHynix Semiconductor Inc.

    Inventor： ROUH KYOUNG BONG ,  JIN SEUNG WOO ,  LEE MIN YONG ,  JUNG YONG SOO

    IPC: H01J37/317

    CPC classification number: H01J37/3171 ,  H01J37/04 ,  H01J37/3023 ,  H01J2237/057 ,  H01J2237/30483 ,  H01J2237/31703

    Abstract: PROBLEM TO BE SOLVED: To provide an ion implantation apparatus and an ion implantation method for performing ion implantation with a different implantation energy for each area of a wafer so as to obtain nonuniform ion implantation energy.
    SOLUTION: The ion implantation apparatus comprises: an ion beam source 110 emitting an ion beam; an implantation energy adjuster 120 for creating an ion beam with a relatively low, first implantation energy during a first period of time and creating an ion beam with a relatively high, second implantation energy during a second period of time; a beam line 130 for accelerating the ion beam adjusted in implantation energy; and an end station 140 for moving the wafer 150 vertically with respect to the ion beam, implanting the ion beam of the first implantation energy into a first area of the wafer 150 and implanting the ion beam of the second implantation energy into a second area of the wafer.
    COPYRIGHT: (C)2008,JPO&INPIT

    Abstract translation: 要解决的问题：提供一种离子注入装置和离子注入方法，用于对于晶片的每个区域以不同的注入能量进行离子注入，以获得不均匀的离子注入能量。 解决方案：离子注入装置包括：离子束源110，其发射离子束; 植入能量调节器120，用于在第一时间段期间产生具有相对低的第一注入能量的离子束，并在第二时间段期间产生具有相对高的第二注入能量的离子束; 用于加速以注入能量调节的离子束的束线130; 以及用于相对于离子束垂直移动晶片150的终端站140，将第一注入能量的离子束注入晶片150的第一区域，并将第二注入能量的离子束注入第二区域 晶圆。 版权所有（C）2008，JPO＆INPIT

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