公开(公告)号：JP2005503028A

公开(公告)日：2005-01-27

申请号：JP2003527848

申请日：2002-08-12

Applicant: インチューン テクノロジーズ リミテッド

Inventor： トーマス ファーレル， ,  デイビッド マクドナルド， ,  トミー ミュレーン，

IPC: H01S5/06 ,  H01S5/0625 ,  H01S5/0687 ,  H01S5/12 ,  H01S5/125

CPC classification number: H01S5/06256 ,  H01S5/0617 ,  H01S5/0687 ,  H01S5/1209

Abstract: 多区域レーザーダイオード１０、マイクロプロセッサ制御装置２４、ディジタル−アナログ変換器２８、駆動回路３０及び波長ロッカー１４を有する多区域レーザーダイオード制御装置が、波長ロッカーによって測定されるレーザー出力に応答してアナログ補正信号ΔＶ
ph を発生するロッキング回路４０を含むように変形される。 アナログ補正信号は、マイクロプロセッサ制御装置によって有効とされる予め設定した位相電圧Ｖ
ph に加算され、マイクロプロセッサ制御装置をバイパスする高速フィードバックを提供する。 この新規なフィードバックは、除算を遂行することを必要とする標準の従来技術の制御アルゴリズムの使用を避けることにより可能となる。 その代りに、単に、加算、減算、及び乗算に基づく新規な制御アルゴリズムを使用する。 このようにして、フィードバック制御経路に低速アナログ−ディジタル及びディジタル−アナログ変換器を配置せずにレーザーをその目標出力周波数に固定することができる。

公开(公告)号：JP2004343043A

公开(公告)日：2004-12-02

申请号：JP2003435913

申请日：2003-12-26

Applicant: Korea Electronics Telecommun ,  韓國電子通信研究院Electronics and Telecommunications Research Institute

Inventor： OH SU HWAN ,  PARK MOON HO ,  LEE JI MYON ,  LEE CHUL WOOK ,  KIM KI SOO ,  KO HYUN-SUNG ,  PARK SAHNG GI ,  CHUNG YOUNG CHUL ,  KIM SU HYUN

IPC: H01S3/0941 ,  H01S3/08 ,  H01S3/10 ,  H01S5/0625 ,  H01S5/12

CPC classification number: H01S5/06258 ,  H01S5/1209 ,  H01S5/1228

Abstract: PROBLEM TO BE SOLVED: To obtain a structure which can give a high optical efficiency and is widely tunable, has a simple structure in comparison with the conventional wavelength tunable laser diode and is advantageous in mass production.
SOLUTION: In a sampled-grating distributed-feedback laser diode having a wide-band variable wavelength, there are so integrated in two different first and second regions from each other (first and second SG-DFB structure portions) first and second sampled gratings 34A, 34B having respectively first and second periods Z
O , Z'
O that each first phase controlling region 35A is inserted between active layers 33 of the first region and each second phase controlling region 35B is inserted between active layers 33 of the second region. By varying the refractive indexes of the phase controlling regions 35A, 35B provided respectively in the first and second regions, the wavelength of the outputted laser can be varied over a wide scope continuously/incontinuously.
COPYRIGHT: (C)2005,JPO&NCIPI

公开(公告)号：JP2004336002A

公开(公告)日：2004-11-25

申请号：JP2003435891

申请日：2003-12-26

Applicant: Korea Electronics Telecommun ,  韓國電子通信研究院Electronics and Telecommunications Research Institute

Inventor： OH SU HWAN ,  PARK MOON HO ,  LEE JI MYON ,  KIM KI SOO ,  LEE CHUL WOOK ,  KO HYUN SUNG ,  PARK SAHNG GI ,  CHUNG YOUNG CHUL ,  KIM SU HYUN

IPC: G02B5/18 ,  H01S3/10 ,  H01S5/028 ,  H01S5/0625 ,  H01S5/12 ,  H01S5/125 ,  H01S5/22 ,  H01S5/227

CPC classification number: H01S5/06256 ,  H01S5/028 ,  H01S5/06258 ,  H01S5/1209 ,  H01S5/125 ,  H01S5/2205 ,  H01S5/227

Abstract: PROBLEM TO BE SOLVED: To provide a sampled grating distributed feedback variable wavelength semiconductor laser connected to a sampled grating Bragg reflector, which has a comparatively simple structure, advantages for production and mass production, as well as an variable optical range of wavelength and superiority in optical output efficiency.
SOLUTION: The semiconductor laser including a SG-DFG construction which generates light wave and has a gain region in which a first period sampled grating is formed and a phase control region; a SG-DBR structure which is formed by integrating together with the SG-DFB structure and has a SG-DBR region in which a second period sampled grating is formed; and non-reflective thin film formed on respective end surfaces of the SG-DFB structure and the SG-DBR structure, is configured such that the oscillating wave length becomes variable depending upon the change of refraction index of the phase control region and/or the SG-DBR region.
COPYRIGHT: (C)2005,JPO&NCIPI

公开(公告)号：JP3592407B2

公开(公告)日：2004-11-24

申请号：JP18321595

申请日：1995-06-28

Applicant: エイ・ティ・アンド・ティ・コーポレーションAt&T Corp.

Inventor： グナック アラン ,  レイボン グレゴリー ,  ティー．ハーヴェイ ジョージ ,  エム．フロバーグ ナン ,  バン ハンセン パー

IPC: H04B10/04 ,  G02F1/01 ,  G02F1/015 ,  H01S5/026 ,  H01S5/06 ,  H01S5/062 ,  H01S5/0625 ,  H04B10/06 ,  H04B10/142 ,  H04B10/152 ,  H04B10/155

CPC classification number: G02F1/0121 ,  G02F1/015 ,  H01S5/0265 ,  H01S5/06213 ,  H01S5/06256 ,  H04B10/505 ,  H04B10/50597 ,  H04B10/508

公开(公告)号：JP3591447B2

公开(公告)日：2004-11-17

申请号：JP2000321102

申请日：2000-10-20

Applicant: 日本電気株式会社

Inventor： 博仁 田中

IPC: G02F1/025 ,  H01S5/00 ,  H01S5/026 ,  H01S5/06 ,  H01S5/0625

CPC classification number: H01S5/026 ,  H01S5/0057 ,  H01S5/0265 ,  H01S5/0612 ,  H01S5/06251 ,  H01S5/06258

公开(公告)号：JP2004235600A

公开(公告)日：2004-08-19

申请号：JP2003135908

申请日：2003-05-14

Applicant: Fujitsu Ltd ,  富士通株式会社

Inventor： HAYAKAWA AKINORI ,  SATOU YOSHIHIRO ,  MORITO TAKESHI ,  SEKINE NORIHIKO

IPC: H01S5/026 ,  H01L27/15 ,  H01S5/028 ,  H01S5/042 ,  H01S5/06 ,  H01S5/062 ,  H01S5/0625 ,  H01S5/12 ,  H01S5/22 ,  H01S5/227 ,  H01S5/323 ,  H01S5/40

CPC classification number: H01S5/0607 ,  H01S5/026 ,  H01S5/0265 ,  H01S5/028 ,  H01S5/042 ,  H01S5/0425 ,  H01S5/06206 ,  H01S5/06258 ,  H01S5/1014 ,  H01S5/2206 ,  H01S5/227 ,  H01S5/32333 ,  H01S5/4012 ,  H01S5/4087 ,  H01S2301/173

Abstract: PROBLEM TO BE SOLVED: To provide an optical semiconductor device of wide variable wavelength range which provides a high optical output. SOLUTION: An optical oscillation part is formed on a semiconductor substrate 10, which comprises an active layer 20 that generates light by current injection, a tuning layer 24 which is formed to the active layer 20 with an intermediate layer 22 in between, and a diffraction lattice 28 formed near the active layer 20 and the tuning layer 24. An optical amplification part is also formed on the semiconductor substrate 10, which comprises the active layer 20 that amplifies the light by current injection and amplifies the light generated at the optical oscillation part. Since the optical amplifier and the optical oscillation element of wide variable wavelength range are integrated on the semiconductor substrate, the wide variable range is obtained and the optical output is significantly raised. COPYRIGHT: (C)2004,JPO&NCIPI

公开(公告)号：JP2004023010A

公开(公告)日：2004-01-22

申请号：JP2002179329

申请日：2002-06-20

Applicant: Yokogawa Electric Corp ,  横河電機株式会社

Inventor： SUEHIRO MASAYUKI ,  IIO SHINJI ,  HIRATA TAKAAKI ,  INOUE TAKESHI ,  HIHARA MAMORU

IPC: H01S5/0625 ,  H01S5/042 ,  H01S5/125

Abstract: PROBLEM TO BE SOLVED: To realize a semiconductor laser capable of restraining deterioration of a far field image and its manufacturing method.
SOLUTION: In the semiconductor laser with a transparent waveguide, a semiconductor substrate, a first clad layer formed on the semiconductor substrate, an active layer having absorption regions in arbitrary sections on both sides of the transparent waveguide formed on the first clad layer, a guide layer being formed on the active layer and having a diffraction grating in a part, a second clad layer formed on the guide layer, a cap layer shaped on the second clad layer and two electrodes formed on the rear of the semiconductor substrate and the cap layer are mounted.
COPYRIGHT: (C)2004,JPO

公开(公告)号：JP2003186067A

公开(公告)日：2003-07-03

申请号：JP2001383725

申请日：2001-12-17

Applicant: FUJITSU LTD

Inventor： MUKAI TAKETERU

IPC: G02F1/017 ,  G01B9/02 ,  G02B6/34 ,  G02F1/365 ,  H01S5/06 ,  H01S5/0625 ,  H01S5/065 ,  H01S5/10 ,  H01S5/50

Abstract: PROBLEM TO BE SOLVED: To provide an optical interferometer which has a small and simplified configuration and can constitute an all-optical switch, an all-optical signal waveform shaping element or an all-optical demultiplexer. SOLUTION: First and second multi-mode interferometers 72A and 72B constituted by forming nonlinear gain areas 71a and 71b on two arms 71A and 71B of a Mach-Zehnder optical interferometer at shifted positions and coupling the arms with each other are provided with mirrors 73A and 73B at one light input/output port to form an optical cavity. A saturable absorption area 73 is arranged at the mirror formation part of one multimode optical interferometer and mode synchronous laser oscillation is induced. COPYRIGHT: (C)2003,JPO

公开(公告)号：JP2003149419A

公开(公告)日：2003-05-21

申请号：JP2001345688

申请日：2001-11-12

Applicant: RICOH KK

Inventor： NAKAJIMA TOMOHIRO

IPC: B41J2/44 ,  G02B3/00 ,  G02B3/08 ,  G02B5/18 ,  G02B6/12 ,  G02B27/00 ,  G02F1/29 ,  H01S5/042 ,  H01S5/06 ,  H01S5/0625 ,  H01S5/125 ,  H04N1/036 ,  H04N1/113

Abstract: PROBLEM TO BE SOLVED: To provide an optical scanner and an image forming device which are small in size and low in power consumption, can perform stable image recording of uniform density even when an environmental temperature is changed and can secure image recording width similar to that of conventional devices. SOLUTION: The optical scanner is provided with a semiconductor laser having at least an active area for emitting laser light in accordance with picture data and a DBR area for finely changing the wavelength of laser light, a photonic crystal having wavelength dispensability and a coupling lens arranged in the vicinity of the laser and capable of converting the convergency of laser light made incident on the crystal. The scanner has also a DBR control means for changing the wavelength of laser light in the DBR area in each scanning and the laser light of the wavelength changed by the DBR control means is deflected by the photonic crystal to execute main scanning.

公开(公告)号：JP2003086892A

公开(公告)日：2003-03-20

申请号：JP2002124840

申请日：2002-04-25

Applicant: MATSUSHITA ELECTRIC IND CO LTD

Inventor： TAKAYAMA TORU

IPC: G02F1/377 ,  H01S5/042 ,  H01S5/0625 ,  H01S5/125

Abstract: PROBLEM TO BE SOLVED: To provide a small wavelength converter composed of a semiconductor laser element and an optical waveguide device which are integrated and mounted on a semiconductor substrate. SOLUTION: This wavelength converter is used for generating a laser beam by converting the wavelength of light through SHG and equipped with a board 5 provided with electrodes 1, 2, and 3, a semiconductor laser element 4 electrically connected to the electrodes 1, 2, and 3, and a nonlinear optical element 7 equipped with an optical waveguide 6 which guides laser beams emitted from the semiconductor laser element 4 to convert their wavelength. The nonlinear optical element 7 is equipped with the optical guide 6 which is mounted on the board apart from the center line M1b of the board 5.