Color filter substrate, liquid crystal display, and method for manufacturing color filter substrate
    2.
    发明专利
    Color filter substrate, liquid crystal display, and method for manufacturing color filter substrate 有权
    彩色滤光片基板,液晶显示器及制造彩色滤光片基板的方法

    公开(公告)号:JP2005055747A

    公开(公告)日:2005-03-03

    申请号:JP2003287868

    申请日:2003-08-06

    CPC classification number: G02F1/133516

    Abstract: PROBLEM TO BE SOLVED: To provide a color filter substrate in which disclination caused by imperfect flatness of a surface is suppressed. SOLUTION: A black matrix 12 is formed on a transparent substrate 11. Color layers 13 are formed on boundaries of the openings of the black matrix 12 and the areas where the layers overlap the black matrix. The color layer 13 is ground by a grinding process so that the angle θ of tilt, the width L of an inclination area, and the angle ϕ of pretilt satisfy equation (1). COPYRIGHT: (C)2005,JPO&NCIPI

    Abstract translation: 要解决的问题:提供一种滤光器基板,其中抑制由表​​面的不均匀性引起的向错。 解决方案:黑色矩阵12形成在透明基板11上。彩色层13形成在黑矩阵12的开口的边界和层与黑矩阵重叠的区域上。 通过研磨处理来研磨彩色层13,使得倾斜角度θ,倾斜面积的宽度L和预倾角的角度φ满足式(1)。 版权所有(C)2005,JPO&NCIPI

    Liquid crystal display device
    3.
    发明专利
    Liquid crystal display device 有权
    液晶显示装置

    公开(公告)号:JP2003084289A

    公开(公告)日:2003-03-19

    申请号:JP2001278590

    申请日:2001-09-13

    Inventor: SATO HIROKI

    CPC classification number: G02F1/13394 G02F2001/13396

    Abstract: PROBLEM TO BE SOLVED: To provide a liquid crystal display device on which a color filter with columnar spacers is mounted, which has satisfactory load resistant properties and in which display defects due to low temperature bubbling are hardly created. SOLUTION: The load resistant properties are enhanced by using a plurality of columnar spacers 43 and 44 corresponding to one pixel of R, G or B and having heights different from each other, providing the plurality of columnar spacers on every other pixel and previously setting up the heights of respective spacers so that a spacer 4 having a smaller height also receives external load together with a spacer 3 having a larger height within the range of elastic deformation of the spacer 3 having a larger height when the spacer 3 is contracted by the external load. Since contraction of a cell gap is absorbed by only the spacer having a larger height at low temperatures, the cell gap is contracted corresponding to the temperature and the display defect due to low temperature bubbling can be reduced.

    Abstract translation: 要解决的问题:提供一种液晶显示装置,其上安装有柱状间隔件的滤色器,其具有令人满意的耐负荷性能,并且几乎不产生由于低温起泡引起的显示缺陷。 解决方案:通过使用对应于R,G或B的一个像素并且具有彼此不同的高度的多个柱状隔离物43和44来​​增强耐负荷性质,在每隔一个像素上提供多个柱状间隔物并预先设置 各间隔件的高度使得当间隔件3被外部的收缩时,具有较小高度的间隔件4也与具有较大高度的间隔件3的弹性变形范围内具有较大高度的间隔件3一起接受外部载荷 加载。 由于单元间隙的收缩仅在低温下仅具有较高高度的间隔物而被吸收,所以单元间隙对应于温度而收缩,并且可以降低由于低温起泡引起的显示缺陷。

    Method of connecting printed wiring board

    公开(公告)号:JP2004140384A

    公开(公告)日:2004-05-13

    申请号:JP2003384594

    申请日:2003-11-14

    Inventor: SATO AKIHIDE

    CPC classification number: H01L2224/73204

    Abstract: PROBLEM TO BE SOLVED: To improve the reliability of connecting a flexible substrate and a rigid substrate via anisotropic conductive adhesive.
    SOLUTION: A convex insulator 4 provided between connecting terminals 3 of a rigid substrate 1 is inserted into a through hole 10 provided between opposed connecting terminals 7 of a flexible substrate 5. The connecting terminals 7 of the flexible substrate 5 and the connecting terminals 3 of the rigid substrate 1 are heated and pressed to electrically connect by using an anisotropic conductive adhesive 8.
    COPYRIGHT: (C)2004,JPO

    Thin film transistor and manufacturing method therefor
    8.
    发明专利
    Thin film transistor and manufacturing method therefor 有权
    薄膜晶体管及其制造方法

    公开(公告)号:JP2003037270A

    公开(公告)日:2003-02-07

    申请号:JP2002132556

    申请日:2002-05-08

    CPC classification number: H01L29/78609 H01L27/1214 H01L29/66765

    Abstract: PROBLEM TO BE SOLVED: To provide the manufacturing method of a thin film transistor, suppressing a back gate effect by the charge-up of an oriented film and a spacer at the upper part of the TFT, and to prevent the voltage-holding defect of a pixel electrode part.
    SOLUTION: After forming semiconductor layers 4a and 4b via a gate insulating film 3 on an insulation substrate 1, the semiconductor layers 4a and 4b are patterned and a channel part is formed. Then, a passivation insulation film 7, covering the semiconductor layers 4a and 4b, is formed. After the formation of the channel part and before the formation of the passivation insulation film 7, a first plasma treatment 16 is executed by using a first gas (gaseous oxygen, for instance) and a second plasma treatment 17 is executed further by using a second gas (gaseous hydrogen, for instance).
    COPYRIGHT: (C)2003,JPO

    Abstract translation: 要解决的问题:为了提供薄膜晶体管的制造方法,通过在TFT的上部的取向膜和间隔物的充电来抑制背栅效应,并且防止电压保持缺陷 像素电极部。 解决方案:在绝缘基板1上通过栅极绝缘膜3形成半导体层4a和4b之后,对半导体层4a和4b进行图案化并形成通道部分。 然后,形成覆盖半导体层4a,4b的钝化绝缘膜7。 在形成通道部分之后并且在形成钝化绝缘膜7之前,通过使用第一气体(例如气态氧)执行第一等离子体处理16,并且通过使用第二等离子体处理17进一步执行第二等离子体处理17 气体(例如气态氢)。

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