Abstract:
PROBLEM TO BE SOLVED: To provide a copper indium diselenide-based photovoltaic device and to provide a method of preparing the photovoltaic device. SOLUTION: The copper indium diselenide (CIS)-based photovoltaic device includes a CIS-based solar absorber layer including copper, indium, and selenium. The CIS-based photovoltaic device further includes a substrate formed from a silicone composition. The substrate, because it is formed from the silicone composition, is both flexible and sufficiently able to withstand annealing temperatures in excess of 500°C to obtain maximum efficiency of the device. COPYRIGHT: (C)2011,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide a silicone resin excellent in fracture toughness.SOLUTION: The rubber-modified rigid silicone resin comprises a reaction product obtained by copolymerizing: (A) an organosilicon composition selected from (I) an organosilicone resin, (II) a hydrolyzable precursor of formula (I), and (III) a hydrolysate formed of (II); and (B) a silicone rubber, in a relative amount to make the prepared rubber-modified silicone resin have 6.9×10Pa Young's modulus.
Abstract:
PROBLEM TO BE SOLVED: To provide a method of forming a ceramic silicon oxide coating with no cracks or pin-holes, containing practically no silanol group, etc., irregularity or level difference on whose inorganic base material can be planarized using hydrogensiloxanes-system polymer, to provide a method of manufacturing an inorganic base material having such a coating, a coat forming agent convertible into such a coating, and to provide a semiconductor device. SOLUTION: In the method of forming the ceramic silicon oxide coating, the inorganic base material is coated by organo hydrogensiloxanes-hydrogensiloxanes copolymer and heated in an inert gas or oxygen-containing inert gas (the oxygen gas is less than 20 vol.%s) with high temperature to convert the coating into the ceramic silicon oxide coating. A method of manufacturing the inorganic base material having the coating, a coat forming agent for a ceramics-like silicon oxide coat made from organo hydrogensiloxanes-hydrogensiloxanes copolymer or from its solution, and a semiconductor device in which at least a semiconductor layer is formed on the silicon oxide coat of the inorganic base material are provided. COPYRIGHT: (C)2009,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide a silicone resin having high strength and fracture toughness.SOLUTION: A hydrosilylation reaction curable composition includes (A) a silsesquioxane copolymer, (B) silyl-terminated hydrocarbon, and (C) a hydrosilylation reaction catalyst.
Abstract:
PROBLEM TO BE SOLVED: To obtain a hydrogenpolysiloxane to become silicone-based glass that does not crack in coating, in curing by heating, etc., has excellent light transmittance in a vacuum ultraviolet light range to a near infrared light range. SOLUTION: The cyclic dihydrogenpolysiloxane is produced by hydrolytic condensation. The silicone-based glass molding having 90-100% light transmittance in a vacuum ultraviolet light range of ≥170 nm to an ultraviolet light range and 98-100% light transmittance in a visible light range to a near infrared light range of ≤1,700 nm is produced by curing a polysiloxane such as a hydrogenpolysiloxane having a specific siloxane unit formula in a mold. The optical element comprises silica-based glass. The optical element having a silica-based glass film layer is produced by coating an optical member with the polysiloxane and curing the polysiloxane. COPYRIGHT: (C)2007,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide a cured organopolysiloxane resin film on which an oxidation silicon nitride layer, a silicon nitride layer, or silicone oxide layer is formed with sufficient adhesiveness, and which is excellent in transparency, gas barrier property or the like, and to provide a method of manufacturing the same. SOLUTION: In the gas barrier cured organopolysiloxane resin film, a cured organopolysiloxane layer having an organic functional group, an organic group formed by polymerizing a polymerizable organic functional group, and a hydrosilyl or silanol group is formed on the film which consists of cured organopolysiloxane resin made by crosslinking by a hydrosilylation reaction, and is transparent in a visible light region, and an oxidation silicon nitride layer, a silicon nitride layer, or a silicone oxide layer is formed on the curing organopolysiloxane layer. The method of manufacturing the gas barrier cured organo polysiloxane resin film is also disclosed. COPYRIGHT: (C)2010,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide a silicone resin excellent in fracture toughness. SOLUTION: A rubber-modified rigid silicone resin includes a copolymerized reaction product of an organosilicon composition (A) selected from the group consisting of an organosilicon resin (I), a hydrolysable precursor (II) of formula (I), and a hydrolyzate (III) of (II) and a silicone rubber (B), wherein the organosilicon composition (A) and the silicone rubber (B) exist by such relative amounts that the rubber-modified rigid silicone resin has a Young's modulus of at least 6.9×10 8 Pa. COPYRIGHT: (C)2009,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide a liquid curable composition excellent in preservation stability and capable of forming a hard silica-based layer; a method of coating, capable of forming a hard silica-based layer excellent in uniformity, flatness, crack resistance and close adhesion; an inorganic substrate plate excellent in heat resistance, cold resistance, electric insulation, mechanical strength, chemical resistance, etc.; and a semiconductor device excellent in accuracy, reliability and stability over a long period of time. SOLUTION: This liquid curable composition is obtained by performing the condensation reaction or hydrolytic condensation reaction of a hydrogen halosilane or an alkoxysilane in an organic solvent dispersed with polyvalent metal oxide fine particles having hydroxy group. The method for coating the inorganic substrate plate is provided by coating the composition on the inorganic substrate plate and curing to form the hard silica-based layer. The inorganic substrate plate having the hard silica-based layer and the semiconductor device having the semiconductor layer on the above inorganic substrate plate are also provided. COPYRIGHT: (C)2008,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide an inorganic substrate with a silica based thin layer which has electric insulating property, flexibility and excellent heat resistance, is flattened and is free from alternation, deterioration or deformation even when exposed at a high temperature, a method of manufacturing the same, a coating agent for the same and a semiconductor device. SOLUTION: The method of manufacturing the inorganic substrate having the silica based glass thin layer having 2H-9H pencil hardness is carried out by applying and curing a cyclic dihydrogen polysiloxane (A) or a hydrogen polysiloxane (B) having a specific unit formula on the inorganic substrate. The inorganic substrate has the silica glass thin layer. The coating agent for the inorganic substrate comprises (A) or (B). The semiconductor device has the inorganic substrate with the silica based glass thin layer. COPYRIGHT: (C)2007,JPO&INPIT