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公开(公告)号：JP5653880B2
公开(公告)日：2015-01-14
申请号：JP2011224290
申请日：2011-10-11
申请人： 信越化学工業株式会社
IPC分类号： G03F7/11 , C08G8/20 , G03F7/26 , H01L21/027
CPC分类号： G03F7/091 , C08J3/24 , G03F7/09 , G03F7/094 , G03F7/095 , G03F7/11 , G03F7/2041 , G03F7/30 , G03F7/36 , H01L21/0271 , H01L21/31116 , H01L21/31138 , H01L21/31144
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公开(公告)号：JP5650086B2
公开(公告)日：2015-01-07
申请号：JP2011220708
申请日：2011-10-05
申请人： 信越化学工業株式会社
IPC分类号： G03F7/11 , C08G79/00 , G03F7/26 , H01L21/027
CPC分类号： C09D183/06 , C08G77/14 , C08G77/18 , C08G77/56 , C08G77/58 , C08L83/06 , G03F7/0751 , G03F7/0752 , G03F7/094
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公开(公告)号：JP5101541B2
公开(公告)日：2012-12-19
申请号：JP2009022685
申请日：2009-02-03
申请人： 信越化学工業株式会社
CPC分类号： G03F7/0035 , G03F7/0042 , G03F7/0043 , G03F7/0397 , G03F7/0757 , G03F7/0758 , G03F7/2024 , G03F7/40 , Y10S430/106 , Y10S430/114 , Y10S430/115
摘要： The present invention provides a patterning process, in which a resistance with regard to an organic solvent used for a composition for formation of a reverse film is rendered to a positive pattern to the degree of necessity and yet solubility into an alkaline etching liquid is secured, thereby enabling to finally obtain a negative image by a positive-negative reversal by performing a wet etching using an alkaline etching liquid. A resist patterning process of the present invention using a positive-negative reversal comprises at least a step of forming a resist film by applying a positive resist composition; a step of obtaining a positive pattern by exposing and developing the resist film; a step of crosslinking the positive resist pattern thus obtained; a step of forming a reverse film; and a step of reversing the positive pattern to a negative pattern by dissolving into an alkaline wet-etching liquid for removal.
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5.发明专利
公开(公告)号：JP5068831B2
公开(公告)日：2012-11-07
申请号：JP2010024379
申请日：2010-02-05
申请人： 信越化学工業株式会社
IPC分类号： G03F7/11 , G03F7/26 , G03F7/40 , H01L21/027
CPC分类号： C07C69/753 , C07C2604/00 , C08L61/06 , G03F7/094 , G03F7/40
摘要： There is disclosed a resist underlayer film composition of a multilayer resist film used in lithography including (A) a fullerene derivative having a carboxyl group protected by a thermally labile group and (B) an organic solvent. There can be a resist underlayer film composition of a multilayer resist film used in lithography for forming a resist underlayer in which generation of wiggling in substrate etching can be highly suppressed and the poisoning problem in forming an upper layer pattern using a chemically amplified resist can be avoided, a process for forming the resist underlayer film, a patterning process and a fullerene derivative.
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公开(公告)号：JP4780323B2
公开(公告)日：2011-09-28
申请号：JP2006284615
申请日：2006-10-19
申请人： 信越化学工業株式会社
IPC分类号： G03F7/11 , C08G77/48 , C09D183/14 , G03F7/26 , G03F7/40 , H01L21/027
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公开(公告)号：JP4716037B2
公开(公告)日：2011-07-06
申请号：JP2007070100
申请日：2007-03-19
申请人： 信越化学工業株式会社
IPC分类号： C09D183/00 , G03F7/11 , G03F7/26 , H01L21/027
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8.发明专利
公开(公告)号：JP4553835B2
公开(公告)日：2010-09-29
申请号：JP2005360202
申请日：2005-12-14
申请人： 信越化学工業株式会社
IPC分类号： G03F7/11 , G03F7/075 , G03F7/26 , H01L21/027
CPC分类号： G03F7/0752 , C08K3/22 , C09D183/14 , G03F7/091 , C08L83/04
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公开(公告)号：JP4491283B2
公开(公告)日：2010-06-30
申请号：JP2004172222
申请日：2004-06-10
CPC分类号： G03F7/091 , Y10S438/952
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10.发明专利
公开(公告)号：JP4430986B2
公开(公告)日：2010-03-10
申请号：JP2004165524
申请日：2004-06-03
申请人： 信越化学工業株式会社
IPC分类号： G03F7/11 , C08G77/14 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a material of an antireflection film ensuring high etching selectivity to a resist, that is, a high etching speed to a resist, to provide a pattern forming method for forming an antireflection film layer on a substrate using this antireflection film material, and to also provide a pattern forming method using this antireflection film as a hard mask for substrate working. SOLUTION: This antireflection film material comprises (A) a high molecular compound having repeating units by copolymerization represented by formula (1) and/or formula (2), (B) an organic solvent and (C) an acid generator. COPYRIGHT: (C)2005,JPO&NCIPI
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