公开(公告)号：JP2010045353A

公开(公告)日：2010-02-25

申请号：JP2009182935

申请日：2009-08-06

Applicant: Fei Co ,  エフ・イ−・アイ・カンパニー

Inventor： HOLTERMANN THERESA ,  GRAUPERA ANTHONY ,  DIBATTISTA MICHAEL

IPC: H01L21/288 ,  H01L21/28 ,  H01L21/3205 ,  H01L23/52

CPC classification number: H01J37/3056 ,  H01J37/317 ,  H01J37/3178 ,  H01J2237/006 ,  H01J2237/31713 ,  H01J2237/31732 ,  H01J2237/31737 ,  H01J2237/31744 ,  H01J2237/31745 ,  H01J2237/31749 ,  H01L21/2885 ,  H01L21/76898 ,  H01L22/14 ,  H01L2924/0002 ,  H01L2924/00

Abstract: PROBLEM TO BE SOLVED: To provide a method of manufacturing micro metal structure. SOLUTION: A micro metal structure is manufactured by forming or exposing a pattern-formed area of enhanced conductivity, and then by forming a conductor on the area using electrodeposition. In some embodiments, a micro metal structure is formed on a substrate, and then the substrate is etched to remove the structure from the substrate. In some embodiments, a converged gallium ion beam not containing a deposition precursor gas is scanned on a silicon substrate with a pattern to form a conductive pattern, and copper structure is formed on the conductive pattern by electrochemical deposition with one or more kinds of metals. The structure can be taken out of the substrate by etching, or can be used in a site. An active layer of a transistor can be accessed using a beam, and a conductor is electrodeposited to form a lead for sensing or changing the operation of a transistor during the transistor is made to function. COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 要解决的问题：提供一种制造微型金属结构的方法。 解决方案：通过形成或暴露具有增强的导电性的图案形成区域，然后通过使用电沉积在区域上形成导体来制造微金属结构。 在一些实施例中，在衬底上形成微金属结构，然后蚀刻衬底以从衬底去除结构。 在一些实施例中，在硅衬底上扫描不含沉积前体气体的会聚镓离子束，以形成导电图案，并且通过用一种或多种金属的电化学沉积在导电图案上形成铜结构。 该结构可以通过蚀刻从衬底中取出，也可以用于现场。 可以使用光束来访问晶体管的有源层，并且在使晶体管发挥作用时，导体被电沉积以形成用于感测或改变晶体管的操作的引线。 版权所有（C）2010，JPO＆INPIT

公开(公告)号：JP2014187370A

公开(公告)日：2014-10-02

申请号：JP2014094902

申请日：2014-05-01

Applicant: Fei Co ,  エフ・イ−・アイ・カンパニー

Inventor： HOLTERMANN THERESA ,  GRAUPERA ANTHONY ,  DIBATTISTA MICHAEL

IPC: H01L21/288 ,  B81C99/00 ,  C25D7/12 ,  H01L21/28

CPC classification number: H01J37/3056 ,  H01J37/317 ,  H01J37/3178 ,  H01J2237/006 ,  H01J2237/31713 ,  H01J2237/31732 ,  H01J2237/31737 ,  H01J2237/31744 ,  H01J2237/31745 ,  H01J2237/31749 ,  H01L21/2885 ,  H01L21/76898 ,  H01L22/14 ,  H01L2924/0002 ,  H01L2924/00

Abstract: PROBLEM TO BE SOLVED: To provide a method for manufacturing a minute metal structure.SOLUTION: A minute metal structure is manufactured by generating a region in which a pattern of enhanced conductivity is formed, or exposing it, and then, forming a conductor by electrodeposition on the region. In some embodiments, a minute metal structure is formed on a substrate, and then, in order to remove the structure from the substrate, etching is performed with the substrate. In some embodiments, a convergence gallium ion beam which does not contain deposition precursor gas scans a silicon substrate in a pattern, so as to generate a conductive pattern, and then, on the conductive pattern, copper structure is formed by electro-chemical deposition of one or more kinds of metal. The structure can be taken out from the substrate by etching, otherwise, that can be used on the spot. Using beam, an active layer of a transistor can be accessed for electrodeposition of a conductor, to form a lead for sensing or changing the behavior during a period in which a transistor is functioning.

Abstract translation: 要解决的问题：提供一种制造微小金属结构的方法。解决方案：通过产生形成增强导电性图案或暴露图案的区域，然后通过电沉积形成导体来制造微小的金属结构 在该地区。 在一些实施例中，在衬底上形成微小的金属结构，然后为了从衬底去除结构，用衬底进行蚀刻。 在一些实施例中，不包含沉积前体气体的会聚镓离子束以图案扫描硅衬底，以便产生导电图案，然后在导电图案上，通过电化学沉积形成铜结构 一种或多种金属。 该结构可以通过蚀刻从衬底中取出，否则可以在现场使用。 使用光束，可以访问晶体管的有源层用于电沉积导体，以形成用于在晶体管工作的时段期间感测或改变行为的引线。

公开(公告)号：JP2014187371A

公开(公告)日：2014-10-02

申请号：JP2014094903

申请日：2014-05-01

Applicant: Fei Co ,  エフ・イ−・アイ・カンパニー

Inventor： HOLTERMANN THERESA ,  GRAUPERA ANTHONY ,  DIBATTISTA MICHAEL

IPC: H01L21/3205 ,  C25D7/00 ,  H01L21/28 ,  H01L21/288 ,  H01L21/302 ,  H01L21/66 ,  H01L21/768

CPC classification number: H01J37/3056 ,  H01J37/317 ,  H01J37/3178 ,  H01J2237/006 ,  H01J2237/31713 ,  H01J2237/31732 ,  H01J2237/31737 ,  H01J2237/31744 ,  H01J2237/31745 ,  H01J2237/31749 ,  H01L21/2885 ,  H01L21/76898 ,  H01L22/14 ,  H01L2924/0002 ,  H01L2924/00

Abstract: PROBLEM TO BE SOLVED: To provide a method for testing an integrated circuit that has been miniaturized.SOLUTION: A minute metal structure is manufactured by generating a region in which a pattern of enhanced conductivity is formed, or exposing it, and then, forming a conductor by electrodeposition on the region. In some embodiments, a minute metal structure is formed on a substrate, and then, in order to remove the structure from the substrate, etching is performed with the substrate. In some embodiments, a convergence gallium ion beam which does not contain deposition precursor gas scans a silicon substrate in a pattern, so as to generate a conductive pattern, and then, on the conductive pattern, copper structure is formed by electro-chemical deposition of one or more kinds of metal. The structure can be taken out from the substrate by etching, otherwise, that can be used on the spot. Using beam, an active layer of a transistor can be accessed for electrodeposition of a conductor, to form a lead for sensing or changing the behavior during a period in which a transistor is functioning.

Abstract translation: 要解决的问题：提供一种已经小型化的集成电路的测试方法。解决方案：通过产生形成增强的导电性图案或曝光的图案的区域来制造微小的金属结构，然后形成 导体通过电沉积在该区域上。 在一些实施例中，在衬底上形成微小的金属结构，然后为了从衬底去除结构，用衬底进行蚀刻。 在一些实施例中，不包含沉积前体气体的会聚镓离子束以图案扫描硅衬底，以便产生导电图案，然后在导电图案上，通过电化学沉积形成铜结构 一种或多种金属。 该结构可以通过蚀刻从衬底中取出，否则可以在现场使用。 使用光束，可以访问晶体管的有源层用于电沉积导体，以形成用于在晶体管工作的时段期间感测或改变行为的引线。