公开(公告)号：JP2017092101A

公开(公告)日：2017-05-25

申请号：JP2015216524

申请日：2015-11-04

申请人： 東京エレクトロン株式会社 ,  Tokyo Electron Ltd

发明人： NAGAI HIROYUKI

IPC分类号： H01L21/768 ,  C23C16/40 ,  C23C16/56 ,  H01L21/3205

CPC分类号： H01L21/31144 ,  C23C16/04 ,  C23C16/40 ,  C23C16/45525 ,  C23C16/56 ,  H01J37/321 ,  H01J37/3211 ,  H01J37/32357 ,  H01L21/02142 ,  H01L21/02175 ,  H01L21/02186 ,  H01L21/02192 ,  H01L21/02194 ,  H01L21/0228 ,  H01L21/0234 ,  H01L21/0332 ,  H01L21/0337 ,  H01L21/3105

摘要： 【課題】パターンを反転する際のばらつきが少ないパターン形成方法を提供する。【解決手段】被エッチング膜11上にメタルパターン12が形成されてなる基板上に、MnOx膜13をALDにより形成し、MnOx膜13の表面に水素ラジカル処理を施し、次いで、Ru膜15をCVDにより形成し、次いで、メタルパターン12をエッチング除去し、Ru/Mn反転材16の反転パターンを得る。MnOx膜13のメタルパターン12に対応する部分は、水素ラジカル処理により酸化物のままの第1Mn含有膜14aとなり、MnOx膜13の被エッチング膜11に対応する部分は、水素ラジカル処理により表面に金属Mnが形成された第2Mn含有膜14bとなり、Ru膜15は第2Mn含有膜14b上に選択的に形成される。【選択図】図1

公开(公告)号：JP2008218659A

公开(公告)日：2008-09-18

申请号：JP2007053178

申请日：2007-03-02

申请人： Tokyo Electron Ltd ,  東京エレクトロン株式会社

发明人： NAGAI HIROYUKI ,  MIYOSHI SHUSUKE ,  MAEKAWA KAORU

IPC分类号： H01L21/3205 ,  C23C14/58 ,  C23C16/56 ,  H01L21/02 ,  H01L21/285 ,  H01L23/52

CPC分类号： C23C14/14 ,  C23C14/5806 ,  C23C14/5846 ,  H01L21/2855 ,  H01L21/76831 ,  H01L21/76843 ,  H01L21/76856 ,  H01L21/76873

摘要： PROBLEM TO BE SOLVED: To provide technology for suppressing the oxidation of a copper film and the raise of wiring resistance in forming a barrier film and the copper film along the recessed part of an insulating film by utilizing an alloy film of copper and additional metal, and then embedding the copper wiring. SOLUTION: The manufacturing method of the semiconductor device is carried out so as to comprise processes of: forming the alloy film, produced by adding the additional metal into copper, along the wall surface of the recessed part on an interlayer insulating film on the surface of a substrate; heating the substrate in an atmosphere containing organic acid, organic anhydride or the ketones in order to form the barrier layer, consisting of the compound of constituting elements of the additional metal and the interlayer insulating film, and deposit excessive additional metal on the surface of the alloy film; and embedding the copper into the recessed part. Since the organic acid anhydride and ketones have reducibility to copper, the barrier layer consisting of the compound of the additional metal and the constituting element in the insulating film can be formed while suppressing the oxidation of copper contained in the alloy film. COPYRIGHT: (C)2008,JPO&INPIT

摘要翻译： 要解决的问题：通过利用铜的合金膜和铜的合金膜，提供抑制铜膜的氧化的技术和形成隔离膜和铜膜沿着绝缘膜的凹部的布线电阻的提高 附加金属，然后嵌入铜线。 解决方案：半导体器件的制造方法进行，包括以下工艺：通过在层间绝缘膜上沿着凹陷部分的壁表面将形成通过将附加金属添加到铜中的合金膜 衬底的表面; 在含有有机酸，有机酸酐或酮的气氛中加热基材，以形成由附加金属的构成元素和层间绝缘膜构成的化合物构成的阻挡层，并在其表面上沉积过量的附加金属 合金膜; 并将铜嵌入到凹部中。 由于有机酸酐和酮具有对铜的还原性，所以可以在抑制合金膜中所含的铜的氧化的同时，形成由绝缘膜中的附加金属的化合物和构成元素构成的阻挡层。 版权所有（C）2008，JPO＆INPIT

公开(公告)号：JP2008210971A

公开(公告)日：2008-09-11

申请号：JP2007045836

申请日：2007-02-26

申请人： Tokyo Electron Ltd ,  東京エレクトロン株式会社

发明人： MAEKAWA KAORU ,  NAGAI HIROYUKI ,  HATANO TATSUO ,  SAKUMA TAKASHI

IPC分类号： H01L21/285 ,  C23C14/14 ,  C23C14/34 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/522

CPC分类号： C23C14/185 ,  C23C14/027 ,  C23C14/345 ,  C23C14/544 ,  H01L21/2855 ,  H01L21/76844 ,  H01L21/76855 ,  H01L21/76873 ,  H01L21/76883 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： PROBLEM TO BE SOLVED: To easily form an alloy layer including an additive metal having a concentration gradient in a thickness direction by sputtering in one processing chamber. SOLUTION: The method for forming a sputtered film comprises a first film forming step of forming a first alloy film on an object to be processed by a metal target particle sputtered by a plasma generated by supplying a gas for generating the plasma into the processing chamber having a metal target comprising an alloy including the additive metal and a main metal, and supplying an electric power to the gas; and a second film forming step of depositing a second alloy film having a concentration of the additive metal diffrent from that of the first alloy film on the first alloy film by a sputtered particle of the metal target by differenciating at least one of a pressure and an electric power in the processing chamber to generate the plasma. This can form the film with its concentration of the additive metal different from that of the main metal in the thickness direction. COPYRIGHT: (C)2008,JPO&INPIT

摘要翻译： 要解决的问题：通过在一个处理室中通过溅射容易地形成包括在厚度方向上具有浓度梯度的添加金属的合金层。 解决方案：用于形成溅射膜的方法包括：第一膜形成步骤，在待加工物体上形成第一合金膜，所述第一合金膜由通过将产生等离子体的气体供应到等离子体中而产生的等离子体溅射的金属靶颗粒 处理室，其具有包括包含所述添加金属和主金属的合金的金属靶，并向所述气体供给电力; 以及第二成膜步骤，通过使所述金属靶的溅射颗粒分离，将具有与所述第一合金膜的添加剂金属的浓度不同的第二合金膜沉积在所述第一合金膜上， 处理室中的电力产生等离子体。 这可以在其厚度方向上形成其添加剂金属的浓度与主金属的浓度不同的膜。 版权所有（C）2008，JPO＆INPIT

公开(公告)号：JP2011040563A

公开(公告)日：2011-02-24

申请号：JP2009186531

申请日：2009-08-11

申请人： Tokyo Electron Ltd ,  東京エレクトロン株式会社

发明人： NAGAI HIROYUKI

IPC分类号： H01L21/768 ,  H01L23/522

摘要： PROBLEM TO BE SOLVED: To provide a substrate treatment method, capable of reducing the possibility of time degradation or alteration of an interlayer insulating film even in a substrate using Low-k material as the interlayer insulating film.
SOLUTION: The substrate treatment method for treating a substrate including a dielectric layer having a dielectric constant lower than that of a silicon oxide film includes: a dehydration step of heating the dielectric layer in an atmosphere of an inert gas to perform dehydration condensation treatment thereon; and annealing step of annealing the substrate in an atmosphere of a gas including at least hydrogen atoms.
COPYRIGHT: (C)2011,JPO&INPIT

摘要翻译： 要解决的问题：提供一种基板处理方法，即使在使用Low-k材料作为层间绝缘膜的基板中，也能够降低层间绝缘膜的时间劣化或变化的可能性。 解决方案：用于处理包含介电常数低于氧化硅膜的介电常数的介电层的基板的基板处理方法包括：在惰性气体气氛中加热电介质层以进行脱水缩合的脱水步骤 处理; 以及在至少包含氢原子的气体的气氛中退火基板的退火步骤。 版权所有（C）2011，JPO＆INPIT

公开(公告)号：JP2005229075A

公开(公告)日：2005-08-25

申请号：JP2004039041

申请日：2004-02-16

申请人： Tokyo Electron Ltd ,  東京エレクトロン株式会社

发明人： HONDA MINORU ,  NAGAI HIROYUKI

IPC分类号： H01L21/768 ,  B29C55/00 ,  H01J37/30 ,  H01L21/312 ,  H01L21/316 ,  H05B6/00

CPC分类号： H01L21/76825 ,  H01J2237/316 ,  H01L21/02137 ,  H01L21/022 ,  H01L21/02203 ,  H01L21/02282 ,  H01L21/02351 ,  H01L21/3122 ,  H01L21/31633 ,  H01L21/76835

摘要： PROBLEM TO BE SOLVED: To provide a laminated film and a reforming method thereof capable of improving the throughput of the reforming process of the laminated film and preventing the degradation of low permittivity, further capable of improving the interlayer adhesion in the laminated film to be able to greatly suppress the interlayer peel, and capable of improving the mechanical strength of an interlayer insulating film.
SOLUTION: The manufacturing method of the laminated film irradiates a first and a second SOD films 51, 52 which are laminated together with an electron beam B and reforms these SOD films 51, 52 simultaneously.
COPYRIGHT: (C)2005,JPO&NCIPI

摘要翻译： 解决的问题：为了提供能够提高层叠膜的重整工序的生产率并防止低介电常数降低的层压膜及其重整方法，还能够提高层压膜中的层间粘合性 能够极大地抑制层间剥离，能够提高层间绝缘膜的机械强度。 解决方案：层叠膜的制造方法照射与电子束B层压在一起的第一和第二SOD膜51,52，同时对这些SOD膜51,52进行改质。 版权所有（C）2005，JPO＆NCIPI

公开(公告)号：JP2002026121A

公开(公告)日：2002-01-25

申请号：JP2000199737

申请日：2000-06-30

申请人： TOKYO ELECTRON LTD

发明人： MAEKAWA KAORU ,  NAGAI HIROYUKI ,  INASAWA KOICHIRO ,  SUEMASA TOMOKI

IPC分类号： H01L21/768 ,  H01L21/316 ,  H01L23/522

摘要： PROBLEM TO BE SOLVED: To increase the resistance with respect to various chemicals and plasma used in semiconductor manufacturing processes by improving the adhesiveness of a low-density film having low permittivity. SOLUTION: The surface of the low-density film, having a low permittivity, is plasma-treated to form a very fine surface modified layer.

公开(公告)号：JP2015179697A

公开(公告)日：2015-10-08

申请号：JP2014055568

申请日：2014-03-18

申请人： TOKYO ELECTRON LTD

发明人： MATSUMOTO KENJI ,  KAWASAKI HIROAKI ,  NAGAI HIROYUKI

IPC分类号： H01L21/3205 ,  C23C16/02 ,  C23C16/40 ,  H01L21/316 ,  H01L21/768 ,  H01L23/532

摘要： 【課題】層間絶縁膜11の表面に露出した銅配線14の表面を薄膜により覆う半導体装置の製造方法において、銅配線14の表面にマンガン酸化物の層25を形成する技術を提供すること。【解決手段】研磨により層間絶縁膜11の表面に銅配線14が露出したウエハWをアニール装置に搬入しアニール処理を行って、研磨時に使用されたスラリーに含まれていたBTAの薄層23を銅配線14の表面から除去する。次いでウエハWを搬送容器C収めて大気に曝すことにより銅配線14の表面を酸化させCuOx層24を形成する。その後、搬送容器Cを、ALD装置5を備えた真空処理装置に搬送し、ALD装置5において、ウエハWにアミドアミノアルカン系マンガン化合物を原料とする原料ガスと水蒸気とを交互に供給して、銅配線14の表面にマンガン酸化物の層25を形成している。【選択図】図1

公开(公告)号：JP2002064137A

公开(公告)日：2002-02-28

申请号：JP2000246494

申请日：2000-08-15

申请人： TOKYO ELECTRON LTD

发明人： SENOO KOJI ,  NAGAI HIROYUKI

IPC分类号： H01L21/768 ,  H01L23/522

摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device which reduces a wiring delay and has high wiring reliability and to provide a method of manufacturing the same. SOLUTION: A plurality of interconnect lines 12a-12f with different pitches P1-P3 are formed on an underlying insulating layer 10. Subsequently, between adjacent interconnect lines with a small pitch whose wiring delay is expected to exceed a predetermined value in the wiring design, an adhesion preventing layer for preventing adhesion with an interlayer dielectric 16 formed on these interconnect lines is formed. In a formed semiconductor device 18, a gap with a low dielectric constant is formed between interconnect lines with a small wiring pitch (portion C) and an insulating film is selectively embedded between interconnect lines with a large wiring pitch (portions A and B).